NEC 2SC2954-T2, 2SC2954-T1, 2SC2954 Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
1994©
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S21e: 20 dB, 12.5 dB
• Large PT in Small Package.
PT: 2 W with 16 cm2 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage V
CBO
35 V
Collector to Emitter Voltage V
CEO
18 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
150 mA
Total Power Dissipation PT* 2.0 W
Termal Resistance R
th(j-a)
* 62.5
C/W
Junction Temperature T
j
150
C
Storage Temperature T
stg
65 to +150C
* With 16 cm
2
0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1
0.42
±0.06
2
2SC2954
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cutoff Current I
CBO
VCB = 10 V, IE = 0 100 nA
DC Current Gain h
FE
VCE = 10 V, IC = 50 mA
*1
30 100 200
Gain Bandwidth Product f
T
VCE = 10 V, IC = 50 mA 3.0 4.0 GHz
Feedback Capacitance C
re
VCB = 10 V, Emitter Grounded,
f = 1.0 MHz
1.1 1.8 pF
Insertion Power Gain
S21e
2VCE = 10 V, IC = 50 mA, f = 500 MHz
R
G
= 50
10 12.5 dB
Noise Figure NF VCE = 10 V, IC = 30 mA, f = 500 MHz
R
G
= 50
2.4 4.0 dB
*1
Pulse Measurement PW 350 s, duty cycle 2 %/Pulsed
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
a
-Ambient Temperature-°C
0
1.0
2.0
50 100 150
P
T
-Total Power Dissipation-W
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
0
100
200
0.5 1.0
I
C
-Collector Current-mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
-Collector to Emitter Voltage-V
0
100
200
246810
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
1
20
30
50
70
100
200
10
10 100 200
h
FE
-DC Current Gain
Free Air R
th(j-a)
312.5 °C/W
Ceramic Substrate
16 cm
2
× 0.7 mm
R
th(j-a)
62.5 °C/W
VCE = 10 V
2 mA
1.5 mA
1 mA
IB = 500 A
µ
0
VCE = 10 V
3
2SC2954
FEED-BACK AND OUTPUT CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CB-Collector to Base Voltage-V
0
0.2
0.3
0.5
5.0
3.0
2.0
1.0
10
0.1
1.00.5 105.0 30
Cre-Feed-back Capacitance-pF
C
ob-Output Capacitance-pF
f = 1.0 MHz
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C-Collector Current-mA
1.0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1
105.0 50 100
fT-Gain Bandwidth Product-MHz
VCE = 10 V
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C-Collector Current-mA
5
5
10
15
30
25
20
0
10 3020 10050
|S21e|
2
-Insertion Gain-dB
INSERTION GAIN vs.
FREQYENCY
f-Frequency-GHz
0.1
5
10
15
20
25
30
0
0.2 0.3 0.5 0.7 1.0
|S21e|
2
-Insertion Gain-dB
VCE = 10 V
f = 100 MHz
f = 200 MHz
f = 500 MHz
f = 1 GHz
VCE = 10 V
I
C = 50 mA
Cob (Emitter Open)
Cve (Emitter Graund)
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