NEC 2SC2570A-T, 2SC2570A Datasheet

DATA SHEET

NPN SILICON TRANSISTOR

2SC2570A

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.

FEATURES

• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA

• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA

ORDERING INFORMATION

Part Number Quantity
2SC2570A Loose products (500 pcs)
2SC2570A-T Taping products (Box type) (2 500 pcs)

Remark

To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipat i on P
Junction Temperature T
Storage Temperature T

CBO

CEO

EBO

C

tot

j

stg

25 V
12 V

3.0 V
70 mA

600 mW
150 °C

–65 to +150 °C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan

©

1980, 1999

2SC2570A

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Note 1

FE

DC Current Gain
Gain Bandwidth Product f
Output Capacitance
Insertion Power Gain
Noise Figure NF VCE = 10 V, IC = 5 mA, f = 1.0 GHz – 1.5 3.0 dB
Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 1.0 GHz – 11.5 – dB
Collector Cutoff Current I
Emitter Cutoff Current I

h

Ob

C

|

S

CBO

EBO

VCE = 10 V, IC = 20 mA 40 – 200 –

T

VCE = 10 V, IC = 20 mA – 5.0 – GHz

Note 2

VCB = 10 V, IE = 0, f = 1.0 MHz – 0.7 0.9 pF

2

|

21e

VCE = 10 V, IC = 20 mA, f = 1.0 GHz 8 10 – dB

VCB = 15 V, IE = 0 – – 0.1
VEB = 2.0 V, IC = 0 – – 0.1

µ

A

µ

A

Notes 1.

Pulse Measurement: PW ≤ 350
The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.

2.

s, Duty Cycle ≤ 2%

µ

2

Data Sheet P10404EJ3V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

600

free Air

(mW)

T

400

200

Total Power Dissipation P

0 50 100

Operating Ambient Temperature T

150 200

A

(°C)

2SC2570A

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

100

FE

50

DC Current Gain h

20

10

0.5 1 5
Collector Current I

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

7

VCE = 10 V

5

)

Z

VCE = 10 V

10 50

C

(mA)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

50

(mA)

10

C

5

Collector Current I

1

0.5

0.5 0.6 0.7
Base to Emitter Voltage V

INSERTION GAIN vs.
COLLECTOR CURRENT

15

VCE = 10 V

0.8

BE

(V)

VCE = 10 V
f = 1.0 GH

0.9

Z

(GH

T

2

1

0.5

0.2

Gain Bandwidth Product f

0.1

0.5 1 5
Collector Current I

10 7050

C

(mA)

Data Sheet P10404EJ3V0DS00

(dB)

10

2

21e

5

Insertion Gain S

0

0.5 1 5

10

Collector Current I

C

(mA)

7050

3