DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number Quantity
2SC2570A Loose products (500 pcs)
2SC2570A-T Taping products (Box type) (2 500 pcs)
Remark
To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipat i on P
Junction Temperature T
Storage Temperature T
CBO
CEO
EBO
C
tot
j
stg
25 V
12 V
3.0 V
70 mA
600 mW
150 °C
–65 to +150 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1980, 1999
2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Note 1
FE
DC Current Gain
Gain Bandwidth Product f
Output Capacitance
Insertion Power Gain
Noise Figure NF VCE = 10 V, IC = 5 mA, f = 1.0 GHz – 1.5 3.0 dB
Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 1.0 GHz – 11.5 – dB
Collector Cutoff Current I
Emitter Cutoff Current I
h
Ob
C
|
S
CBO
EBO
VCE = 10 V, IC = 20 mA 40 – 200 –
T
VCE = 10 V, IC = 20 mA – 5.0 – GHz
Note 2
VCB = 10 V, IE = 0, f = 1.0 MHz – 0.7 0.9 pF
2
|
21e
VCE = 10 V, IC = 20 mA, f = 1.0 GHz 8 10 – dB
VCB = 15 V, IE = 0 – – 0.1
VEB = 2.0 V, IC = 0 – – 0.1
µ
A
µ
A
Notes 1.
Pulse Measurement: PW ≤ 350
The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2.
s, Duty Cycle ≤ 2%
µ
2
Data Sheet P10404EJ3V0DS00
TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
free Air
(mW)
T
400
200
Total Power Dissipation P
0 50 100
Operating Ambient Temperature T
150 200
A
(°C)
2SC2570A
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
FE
50
DC Current Gain h
20
10
0.5 1 5
Collector Current I
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
)
Z
VCE = 10 V
10 50
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
(mA)
10
C
5
Collector Current I
1
0.5
0.5 0.6 0.7
Base to Emitter Voltage V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
0.8
BE
(V)
VCE = 10 V
f = 1.0 GH
0.9
Z
(GH
T
2
1
0.5
0.2
Gain Bandwidth Product f
0.1
0.5 1 5
Collector Current I
10 7050
C
(mA)
Data Sheet P10404EJ3V0DS00
(dB)
10
2
21e
5
Insertion Gain S
0
0.5 1 5
10
Collector Current I
C
(mA)
7050
3
2SC2570A
OUTPUT AND INPUT
CAPACITANCE vs. REVERSE VOLTAGE
2
(pF)
ob
(pF)
ib
1
C
ib
0.5
Input Capacitance C
Output Capacitance C
0.3
0 0.5 1 2 5
Collector to Base Voltage V
Emitter to Base Voltage V
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
20
(dB)
max.
(dB)
2
21e
NOISE FIGURE vs.
COLLECTOR CURRENT
f = 1.0 MH
7
Z
6
VCE = 10 V
f = 1.0 GH
Z
5
4
C
ob
3
2
Noise Figure NF (dB)
1
10 3020
CB
(V)
EB
(V)
0.5 1 105
Collector Current I
C
(mA)
50
70
0
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
VCE = 10 V
I
C
= 5 mA
20
(dB)
G
max
2
S
21e
(dB)
2
21e
max.
S
21e
2
VCE = 10 V
I
C
= 20 mA
G
max
10
Maximum Available Gain G
Insertion Power Gain S
0
0.1 1.00.2 0.4
Frequency f (GHZ)
S-PARAMETER
0.11
0.10
0.39
0.40
0.09
100
0.41
0.08
110
120
0.6
0.4
S
0.6
120
−
0.09
0.41
0.9
0.8
0.7
1.5GH
1.0
0.500.6
0.7
0.8
0.8
RESISTANCE COMPONENT
R
Zo
0.6
11e
0.4
0.7
0.8
110
−
0.9
100
−
0.10
0.11
0.40
0.39
0.42
0.07
0.43
0.06
130
0.5
0.44
T
N
E
N
0.05
O
0.4
140
P
0.45
R
M
O
O
C
T
E
A
C
N
R
A
0.04
E
T
0.3
0.46
C
N
+JX
A
150
E
E
Zo
R
G
E
V
D
I
T
I
R
S
0.03
A
O
0.47
P
W
0.2
O
T
S
E
S
E
H
R
0.02
T
0.48
G
E
G
D
N
N
0.1
I
E
L
T
N
E
E
I
0.01
V
0.49
C
A
I
F
F
W
E
O
0.2
0.1
C
0
0
N
O
I
T
D
C
E
A
L
O
F
L
E
R
0.01
D
0.49
F
R
O
A
E
L
W
G
O
N
A
T
0.02
S
0.48
H
T
G
N
E
L
0.03.
0.47
0.46
0.3
0.1
0.2
T
N
−160
E
N
O
P
E
M
V
O
C
A
E
Zo
W
C
0.3
150
N
−JX
−
A
T
0.04
C
A
E
R
E
V
I
T
0.4
A
140
0.05
G
−
E
N
0.45
0.5
0.06
130
−
0.44
0.07
0.43
0.08
0.42
10
Maximum Available Gain G
Insertion Power Gain S
0.6 20.8
0
0.1 1.00.2 0.4
0.6 20.8
Frequency f (GHZ)
S-PARAMETER
0.13
0.12
0.14
0.37
0.38
0.15
0.36
0.35
80
1.2
0.4
0.6
0.8
0.8
Z
0.6
0.4
0.2
1.2
1.4
1.5GH
0.6
0.8
0.6
0.2
0.4
0.2
1.2
0.13
0.37
0.16
0.34
0.17
70
0.33
0.18
1.4
60
0.32
1.6
1.8
50
0.31
2.0
40
3.0
1.0
1.0
1.6
1.8
2.0
3.0
4.0
5.01020
Z
1.0
0.4
S
22e
1.0
1.0
0.2
0.8
1.4
−
80
0.14
0.36
3.0
40
−
50
2.0
0.18
1.8
0.32
−60
1.6
0.17
−
0.33
70
0.16
0.34
0.15
0.35
90
1.0
0.2
0.9
1.0
0.2
0.4
1.0
90
−
0.12
0.38
CE
= 10 V
V
C
= 5 mA
I
0.19
0.20
0.30
0
= 50 Ω
Z
0.21
0.29
30
0.22
4.0
0.28
5.0
20
0.23
0.27
10
10
0.24
0.26
20
50
0.25
0.25
0
50
50
0.24
0.26
20
−10
10
0.23
0.27
−20
0.22
5.0
0.28
4.0
−30
0.21
0.29
0.20
−
0.30
0.19
0.31
0.06
0.44
0.05
140
0.45
R
O
T
A
R
0.04
E
0.46
N
150
E
G
D
R
0.03
A
O
0.47
P
W
0.2
O
T
S
E
S
E
H
R
0.02
T
0.48
G
E
G
D
N
N
0.1
I
E
L
T
N
E
E
I
0.01
V
0.49
C
A
I
F
F
W
E
O
0.1
C
0
0
N
O
I
T
D
C
E
A
L
O
F
L
E
R
0.01
D
0.49
F
0.1
R
O
A
E
L
W
G
O
N
A
T
0.02
S
0.48
H
T
0.2
T
G
−160
N
E
L
0.03.
0.47
E
V
A
W
0.3
150
−
0.04
0.46
0.05
0.45
0.44
0.10
0.09
0.41
0.08
110
0.42
120
0.07
0.43
0.6
130
0.5
T
N
E
N
O
0.4
P
M
O
C
E
C
N
A
T
0.3
C
+JX
A
E
Zo
R
E
V
I
T
I
S
0.2
0.3
0.4
N
E
N
O
P
M
O
C
E
Zo
C
N
−JX
A
T
C
A
E
R
E
V
I
T
0.4
A
140
G
−
E
N
0.5
0.06
130
−
0.6
0.07
120
−
0.43
0.08
0.42
0.09
0.41
0.12
0.11
0.38
0.39
0.40
100
0.9
0.8
0.7
1.5GH
1.0
0.8
0.6
0.500.6
0.7
0.8
RESISTANCE COMPONENT
R
0.4
S
11e
Zo
0.2
0.7
0.8
110
−
0.9
100
−
0.10
0.11
0.40
0.39
0.9
0.12
0.38
0.13
0.37
90
1.0
0.2
0.4
0.4
0.2
1.0
1.2
1.5GH
0.2
0.4
0.6
0.2
1.0
90
−
0.14
0.15
0.36
0.35
0.16
0.34
80
1.2
0.6
0.8
0.8
Z
0.6
1.4
0.8
0.6
0.4
1.2
0.13
0.37
0.17
70
0.33
0.18
1.4
60
0.32
1.6
1.8
50
2.0
1.0
1.0
1.6
1.8
2.0
3.0
4.0
5.01020
Z
1.0
0.4
0.2
S
22e
1.0
1.0
0.8
−
50
2.0
1.8
−
60
1.6
0.17
1.4
−
0.33
70
0.16
−80
0.34
0.15
0.14
0.35
0.36
V
CE
= 10 V
C
= 20 mA
I
0.19
0.31
0.20
0.30
40
0
= 50 Ω
Z
0.21
3.0
0.29
30
0.22
4.0
0.28
5.0
20
0.23
0.27
10
10
0.24
0.26
20
50
0.25
0.25
0
50
50
0.24
0.26
20
−10
10
0.23
0.27
−20
0.22
5.0
0.28
4.0
−30
0.21
0.29
3.0
0.20
−
0.30
40
0.19
0.31
0.18
0.32
4
Data Sheet P10404EJ3V0DS00
PACKAGE DIMENSION
TO-92 (UNIT:mm)
1.27
2SC2570A
5.2 MAX.
5.5 MAX.14.0 MIN.4.2 MAX.
0.5
2.54
1.77 MAX.
213
1. BASE
2. EMITTER
3. COLLECTOR
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
Data Sheet P10404EJ3V0DS00
5
[MEMO]
2SC2570A
6
Data Sheet P10404EJ3V0DS00
[MEMO]
2SC2570A
Data Sheet P10404EJ3V0DS00
7
2SC2570A
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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