NEC 2SB1657 Datasheet
DATA SHEET
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
1.2
(0.047)
1.2
(0.047)
0.8
(0.031)
2.3
(0.090)
1.
2.
3.
Emitter
Collector connected to mounting plane
Base
2.3
(0.090)
+0.08
−0.05
0.55
(0.021)
+0.08
−0.05
123
12.0 MAX.
(0.472 MAX.)
3.8 ± 0.2 (0.149)
φ
φ
φ
φ
3.2 ± 0.2
( 0.126)
2.5 ± 0.2
(0.098)
13.0 MIN.
(0.512 MIN.)
2.8 MAX.
(0.110 MAX.)
3.2 ± 0.2 ( 0.126)
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS
FEATURES
• Low VCE(sat)
VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA)
• High DC Current Gain
hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage V
Collector to Emitter Volteage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (Pulse)* I
Base Current (DC) I
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (T
Total Power Dissipation (T
C = 25 °C) PT 10 W
A = 25 °C) PT 1.0 W
Maximum Temperature
Junction Temperature Tj 150 °C
Storage Temperature T
CB0 −30 V
CE0 −30 V
EB0 −6.0 V
C(DC) −5.0 A
C(Pulse) −8.0 A
B(DC) −1.0 A
stg −55 to 150 °C
SILICON TRANSISTOR
2SB1657
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Document No. D10627EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Collector Cutoff Currnet ICB0 VCB = −30 V, IE = 0 −100 nA
Emitter Cutoff Current IEB0 VEB = −6.0 V, IC = 0 −100 nA
DC Current Gain hFE1 VCE = −2.0 V, IC = −0.5 A 150 600
DC Current Gain hFE2 VCE = −2.0 V, IC = −3.0 A 70
Collector Saturation Voltage VCE(sat)1 IC = −0.5 A, IB = −25 mA −0.08 −0.15 V
Collector Saturation Voltage VCE(sat)2 IC = −1.0 A, IB = −50 mA −0.13 −0.25 V
Collector Saturation Voltage VCE(sat)3 IC = −2.0 A, IB = −100 mA −0.24 −0.40 V
Collector Saturation Voltage VCE(sat)4 IC = −3.0 V, IB = −75 mA −0.46 −1.0 V
Base Saturation Voltage VBE(sat) IC = −1.0 A, IB = −50 mA −0.83 −1.50 V
Gain Bandwidth Product fT VCE = −10 V, IE = −50 mA 75 MHz
Output Capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 60 pF
characteristics SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
The information in this document is subject to change without notice.
−
−
©
1996
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
2SB1657
80
60
40
dT - Percentage of Rated Power - %
20
TC -Case Temperature - °C
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
14
S/b Limited
Dissipation Limited
140120100806040200
160
12
10
8
6
4
- Total Power Dissipation - W
T
P
2
0
TC -Case Temperature - °C
14012010080604020
160
2
−100
2SB1657
FORWARD BIAS SAFE OPERATING AREA
−10
I
C(DC)
- Collector Current - A
−1
C
I
TC = 25 °C
Single Pulse
−0.1
I
C(pulse)
Power Dissipation Limited
100 ms
VCE - Collector to Emitter Voltage - V
PW = 0.1 ms
1 ms
10 ms
S/b Limited
−100−10−1−0.1
3
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