NEC 2SA1988 Datasheet

PNP SILICON TRANSISTOR

MP-88

1.Base

2.Collector

3.Emitter

4.Fin (Collector)

1 2 3

15.7 MAX. 3.2±0.2

4.5±0.2

5.0 1.03.4MAX.

20.5MAX.19 MIN.

2.2±0.2

5.45 5.45

1.0±0.2

4

4.7 MAX.

1.5

2.8±0.10.6±0.1

φ

POWER AMPLIFIER

INDUSTRIAL USE

DESCRIPTION

The 2SA1988 is PNP Silicon Power Transistor that

designed for audio frequency power amplifier.

FEATURES

• High Voltage VCEO = −200 V

• DC Current Gain h

• TO-3P Package

FE = 70 to 200

DATA SHEET

Silicon Power Transistor

2SA1988

PACKAGE DIMENSIONS

ORDERING INFORMATION

Type Number Package

2SA1988 MP-88

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage VCBO −200 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Total Power Dissipantion P
JunctionTemperature T
Storage Tempreature T

*1 PW ≤ 300

µ

s, Duty Cycle ≤ 10 % *2 TC = 25 °C

CEO −200 V

EBO −5.0 V
C (DC) −7.0 A
C (pulse) *1 -10 A

2 *2 100 W

J 150 °C

stg −55 to +150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO −50
Emitter Cutoff Current IEBO −50
DC Current Gain hFE1 70 200 − VCE = −5.0 V, IC = −1.0 A ∗
DC Current Gain hFE2 20 − VCE = −5.0 V, IC = −3.5 A ∗
Collector Saturation Voltage VCE (sat) −0.6 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Base Saturation Voltage VBE (sat) −1.3 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Gain Band width Product fT 40 MHz VCE = −5.0 V, IC = 1.0 mA
Output Capacitance Cob 270 pF VCB = −10 V, IC = 0, f = 1.0 MHz

∗ Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2 %

µ

AVCB = −200 V, IE = 0

µ

AVEB = −3.0 V, IC = 0

Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan

The information in this document is subject to change without notice.

©

1996

CHARACTERISTICS (TA = 25 °C)

2SA1988

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

S/b Limited

60

Dissipation Limited

40

20

dT - Percentage of Rated Power - %

0

50 100 150

T

C - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

-100

-10

-1

IC(Pulse)

IC(DC)

Dissipation Limited

PW=1ms

S/b Limited

IC - Collector Current - A

TC = 25 °C
Single Pulse

-0.1

-1
V

-10 -100 -1000

CE - Collector to Emitter Voltage - V

10ms
100ms
200ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

20

PT - Total Power Dissipation - W

0

20

40 60 80 100 120 140 160

T

C - Case Temperature - °C

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

-12

-10

-8

-6

-4

IC - Collector Current - A

-2

0

V

-10

CE - Collector to Emitter Voltage - V

IB=120mA

100mA

80mA

60mA

40mA

20mA

-20

Pulsed

-30

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

Rth (J-C)

0.1

rth(t) - Transient Thermal Resistance - °C/W

0.01

1 m 10 m 100 m 1 10 100 1 000 100

µ

Single Pulse

TC=25°C

PW - Pulse Width - s

2