Page 1
PRELIMINARY DATA SHEET
DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES PACKAGE DIMENSIONS
•
High f
T
fT = 5.5 GHz TYP.
•
| S
| 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA
21e
•
High speed switching characteristics
•
Equivalent NPN transistor is the 2SC2351.
•
Alternative of the 2SA1424.
ABSOL UTE MAXIMUM RATINGS (TA = 25
Parameter Symbol Rating Unit
0.2
_
+
°°°°
C)
2.9
(in milimeters)
+0.1
–0.05
0.4
2
0.950.95
1
_
2.8+0.2
1.5 0.65
3
+0.1
0.4
–0.05
+0.1
–0.15
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CB0
CE0
EB0
C
T
i
stg
ELECTRICAL CHARACTERISTICS (TA = 25
−
20 V
−
12 V
−
3.0 V
−
50 mA
200 mW
150
−
65 to +150
°°°°
C)
Marking
0.3
+0.1
–0.06
1.1 to 1.4
°
C
°
C
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
0.16
0 to 0.1
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Collector Capacitance
C
Insertion Power Gain | S
CB0
EB0
FE
T
*
re
21e
VCB = −10 V
VEB = −2 V
VCE = −10 V, IC = −15 mA 20 40 100
VCE = −10 V, IC = −15 mA 4.0 5.5 GHz
= −10 V, IE = 0, f = 1 MHz 0.5 1 pF
V
CB
| 2VCE = −10 V, IC = −15 mA, f = 1.0 GHz 8.0 10.0 dB
−
0.1
−
0.1
Noise Figure NF VCE = −10 V, IC = −3.0 mA, f = 1 GHz 2.0 3 dB
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
µ
A
µ
A
hFE Classification
Rank FB
Marking T93
h
FE
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
20 to 100
1996©
Page 2
SWITCHING CHARACTERISTICS
2SA1978
Parameter
Symbol
Vin = 1 V
TYP
Turn-on Delay Time ton (delay) 1.10 ns
Rise Time t
Turn off Delay Time t
Fall Time t
r
(delay) 0.40 ns
off
f
0.77 ns
0.79 ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC ( – )
C1
R
R
V
OUT
L1
Sampling
V
in
R
S
Oscilloscope
R
R
E
VEE ( + )
C2
50 Ω
Unit
R
L2
VSS ( – )
V
t
on (delay)
V
in
OUT
20 ns
r
t
t
off (delay)
t
f
Vin = 1 V, VBB = −0.5 V, RC1 = R
R
S
R
C
R
L1
R
L2
C2
R
E
V
EE
V
CC
(Ω)(Ω)(Ω)(Ω)(Ω)(V)(V)
160 1 k 200 250 2.7 k 27 26.3
2
Page 3
TYPICAL CHARACTERISTICS
2SA1978
TOTAL POWER DISSIPATION
AMBIENT TEMPERATURE
400
300
200
100
- Total Power Dissipation - mV
T
P
0
50 100 200
TA - Ambient Temperature - ˚C
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
–10
VS.
150
VCE = –1 V
NOISE FIGURE
VS.
COLLECTOR CURRENT
6
VCE = 10 V
f = 1 GH
Z
4
2
NF - Noise Figure - dB
0
1
I
C -
Collector Current - mA
10 100
COLLECTOR SATURATION AND BASE TO EMITTER
VS.
VOLTAGE
COLLECTOR CURRENT
–10
VCE = –10 V
I
C
= 10 · I
B
–1.0
–0.1
(ON) - DC Base Voltage - V
BE
V
–0.01
–1–0.1 –10 –100 –1000
C -
Collector Current - mA
INSERTION GAIN vs. COLLECTOR CURRENT
14
12
10
8
6
- Insertion Power Gain - dB
2
4
21e
S
2
VCE = –1 V
f = 1 GH
VCE = –10 V
VCE = –3 V
–1.0
–0.1
Collector Saturation Voltage - V
Base Satturation Voltage - V
-
-
(sat)
CE
BE (sat)
V
V
–0.01
–1–0.1 –10 –100 –1000
I
C -
Collector Current - mAI
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
14
Z
12
Z
f = 1 GH
Z
VCE = –10 V
10
8
6
4
- Gain Bandwidth Product - GH
T
f
2
VCE = –1 V
VCE = –3 V
0
1 10 100
C -
Collector Current - mA
I
0
1 10 100
C -
Collector Current - mA
I
3
Page 4
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
2SA1978
INSERTION GAIN vs. FREQUENCY
30
1.5
1
0.5
Cre - Collector Capacitance - pF
0
1 10 100
VCBO - Collector to Base Voltage - V
DC CURRENT GAIN vs.
100
10
COLLECTOR CURRENT
VCE = –3 V
VCE = –2 V
VCE = –1 V
20
10
0
- Insertion Power Gain - dB
2
|S21e|
–10
100
100
10
200 300 500 1000 3000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = –10 V
IC = –15 mA
VCE = 1 V
IC = –5 mA
f - Frequency - MHz
VCE = –10 V
hFE - DC Current Gain
1
–0.1
–1 –10 –100 –1000
Ic - Collector Current - mA
hFE - DC Current Gain
1
–0.1 –1 –10 –100 –1000
Ic - Collector Current - mA
4
Page 5
S-PARAMETER
2SA1978
S11
3 GHZ
3 GHZ
VCE = –10 V, IC = –15 mA
f = 100 MHZ
f = 100 MHZ
VCE = –1 V, IC = –5 mA
S22
3 GH
VCE = –10 V, IC = –15 mA
Z
3 GH
Z
VCE = –1 V, IC = –5 mA
100 MH
100 MH
Z
Z
5
Page 6
S-PARAMETER
(VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
2SA1978
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.527
200 0.468
300 0.427
400 0.407
500 0.393
600 0.388
700 0.386
800 0.388
900 0.392
1000 0.394
1100 0.399
1200 0.405
1300 0.410
1400 0.416
1500 0.422
1600 0.431
1700 0.438
1800 0.445
1900 0.451
2000 0.460
2100 0.465
2200 0.473
2300 0.481
2400 0.487
2500 0.493
−
47.1 10.5 149. 0.0359 70.6 0.881
−
83.4 8.37 128. 0.0584 58.7 0.716
−
109 6.63 114. 0.0729 53.6 0.586
−
128 5.36 104. 0.0835 52.1 0.503
−
143 4.46 96.6 0.0930 52.1 0.443
−
154 3.82 90.2
−
164 3.34 84.9
−
172 2.96 80.1
−
179 2.67 75.8
174
169
163
159
154
150
147
143
140
136
133
130
127
125
122
119
2.43 71.6
2.24 68.1
2.07 64.6
1.93 61.3
1.81 58.0
1.71 54.9
1.62 52.0
1.54 49.3
1.47 46.6
1.41 44.1
1.35 41.5
1.30 39.2
1.26 36.9
1.21 34.8
1.17 32.5
1.14 30.6
0.100
0.109
0.118
0.128
0.137
0.147
0.158
0.168
0.179
0.190
0.201
0.213
0.224
0.236
0.248
0.261
0.273
0.286
0.299
0.312
53.1 0.401
53.3 0.373
54.4 0.351
55.6 0.332
56.4 0.319
56.9 0.306
57.2 0.298
57.6 0.289
57.7 0.280
57.7 0.274
57.7 0.267
57.5 0.262
57.2 0.259
56.8 0.252
56.3 0.247
55.7 0.243
55.1 0.239
54.3 0.234
53.3 0.235
52.6 0.230
−
21.1
−
34.2
−
40.9
−
44.3
−
45.8
−
46.7
−
47.7
−
49.1
−
50.1
−
51.4
−
53.2
−
54.5
−
57.0
−
59.3
−
61.2
−
64.4
−
66.7
−
70.3
−
73.6
−
76.3
−
80.2
−
84.4
−
87.2
−
91.9
−
95.9
6
Page 7
S-PARAMETER
(VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
2SA1978
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.558
200 0.485
300 0.423
400 0.381
500 0.353
600 0.339
700 0.329
800 0.325
900 0.325
1000 0.326
−
37.1 11.0 153. 0.0288 74.3 915
−
67.9 9.13 133. 0.0467 83.0 784
−
92.5 7.48 119. 0.0611 58.1 670
−
111 6.21 109. 0.0703 56.5 590
−
127 5.18 101. 0.0801 56.1 531
−
140 4.47 95.1 0.0880 56.7 490
−
151 3.92 89.9 0.0938 57.5 461
−
160 3.48 84.9
−
169 3.14 80.7
−
176 2.87 76.9
1100 0.330 177 2.64 73.0
1200 0.335 170 2.44 69.6
1300 0.339 165 2.28 66.5
1400 0.345 160 2.13 63.3
1500 0.351 155 2.01 60.2
1600 0.360 151 1.90 57.4
1700 0.366 147 1.81 54.6
1800 0.374 143 1.72 52.0
1900 0.382 140 1.65 49.5
2000 0.390 137 1.58 47.0
2100 0.396 133 1.52 44.6
2200 0.404 130 1.46 42.4
2300 0.413 127 1.41 40.2
2400 0.418 125 1.36 38.0
2500 0.427 122 1.32 35.9
0.104
0.113
0.122
0.131
0.140
0.150
0.160
0.170
0.181
0.191
0.202
0.213
0.223
0.233
0.243
0.251
0.273
0.255
57.9 438
58.7 419
59.5 408
60.5 393
61.2 386
61.3 377
61.9 366
61.9 362
61.8 354
61.8 349
61.7 344
61.3 337
61.0 334
60.4 328
60.2 321
59.4 318
58.9 314
58.2 303
−
16.3
−
27.0
−
33.0
−
36.0
−
37.4
−
38.1
−
33.8
−
39.8
−
40.4
−
41.6
−
42.8
−
44.0
−
45.9
−
47.5
−
49.0
−
51.0
−
53.0
−
55.5
−
58.1
−
60.4
−
63.0
−
65.9
−
68.3
−
72.1
−
74.8
7
Page 8
S-PARAMETER
(VCE = 10 V, IC = 5 mA, Zo = 50 Ω)
2SA1978
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.529
200 0.548
300 0.463
400 0.400
500 0.349
600 0.316
700 0.292
800 0.277
900 0.267
1000 0.261
1100 0.259
1200 0.260
−
28.8 11.3 156. 0.0234 75.4 0.939
−
53.5 9.70 138. 0.0412 67.4 0.836
−
73.9 8.20 124. 0.0530 62.1 0.739
−
91.4 6.94 114. 0.0620 59.7 0.666
−
106 5.86 106. 0.0712 58.9 0.608
−
119 5.09 100. 0.0793 59.8 0.567
−
131 4.49 94.6 0.0860 59.6 0.539
−
141 4.00 89.7 0.0938 60.4 0.516
−
152 3.63 85.4 0.101 61.3 0.498
−
160 3.31 81.5 0.109 61.9 0.485
−
169 3.04 77.9 0.117 62.8 0.472
−
177 2.82 74.5 0.125 63.2 0.463
1300 0.263 176 2.63 71.3 0.133 63.9 0.455
1400 0.267 169 2.46 68.2 0.143 64.4 0.448
1500 0.272 164 2.32 65.3 0.152 64.5 0.440
1600 0.280 159 2.20 62.5 0.161 64.6 0.434
1700 0.286 154 2.09 59.8 0.171 64.9 0.428
1800 0.293 149 1.99 57.3 0.191 64.8 0.423
1900 0.300 145 1.90 54.8 0.192 64.4 0.417
2000 0.308 141 1.82 52.3 0.201 64.5 0.413
2100 0.315 138 1.75 49.9 0.212 63.9 0.408
2200 0.325 134 1.68 47.6 0.223 63.8 0.402
2300 0.333 131 1.63 45.5 0.235 63.2 0.397
2400 0.341 128 1.57 43.3 0.246 62.7 0.395
2500 0.348 125 1.52 41.2 0.258 62.1 0.388
−
12.8
−
21.7
−
27.2
−
29.9
−
31.4
−
31.9
−
32.7
−
33.5
−
34.2
−
35.1
−
35.9
−
36.9
−
38.4
−
39.5
−
40.8
−
42.5
−
44.1
−
46.0
−
47.8
−
49.7
−
51.9
−
54.3
−
56.1
−
58.7
−
61.0
8
Page 9
S-PARAMETER
= 10 V, IC = 15 mA, Zo = 50 Ω)
(V
CE
2SA1978
fS
11
S
21
S
12
S
22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100 0.354
200 0.290
300 0.247
400 0.226
500 0.215
600 0.210
700 0.208
800 0.211
−
46.6 17.87 147. 0.0190 74.6 866
−
81.8 13.45 125. 0.0317 70.0 708
−
107 10.35 113. 0.0420 68.4 601
−
126 8.294 104. 0.0518 68.3 539
−
141 6.799 97.8 0.0626 69.8 497
−
154 5.805 92.4 0.0720 70.8 470
−
164 5.050 88.1 0.0820 71.0 450
−
172 4.475 84.1 0.0919 70.9 435
900 0.215 179 4.008 80.5 0.102 70.9 423
1000 0.218 172 3.647 77.2 0.112 70.7 415
1100 0.225 166 3.345 74.2 0.121 70.9 405
1200 0.232 160 3.086 71.1 0.133 70.3 400
1300 0.237 156 2.871 68.4 0.143 70.2 394
1400 0.244 151 2.685 65.7 0.153 69.7 386
1500 0.251 147 2.532 63.2 0.165 69.2 381
1600 0.261 143 2.392 60.5 0.174 68.7 376
1700 0.268 140 2.265 58.2 0.185 68.0 373
1800 0.276 137 2.155 55.7 0.196 67.3 366
1900 0.284 134 2.059 53.5 0.207 66.5 360
2000 0.292 131 1.974 51.1 0.219 65.8 356
2100 0.299 128 1.897 49.0 0.230 65.1 350
2200 0.308 125 1.826 46.9 0.242 64.2 345
2300 0.317 123 1.763 44.7 0.252 63.3 341
2400 0.324 121 1.697 42.7 0.264 62.4 337
2500 0.332 119 1.646 40.7 0.276 61.5 331
−
18.3
−
26.9
−
29.8
−
30.5
−
30.2
−
30.1
−
30.2
−
30.6
−
31.1
−
32.2
−
32.9
−
34.2
−
35.7
−
36.8
−
38.4
−
39.9
−
41.6
−
43.7
−
45.7
−
47.5
−
49.7
−
51.8
−
53.8
−
56.7
−
58.8
9
Page 10
2SA1978
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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