NEC 1SS303 DATA SHEET
DATA SHEET
p
SILICON SWITCHING DI ODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
FEATURES
• Low capacitance: Ct
• High speed switching: t
• Wide applications including switching, limitter, clipper.
• Double diode configuration assures economical use.
= 2.5 pF TYP.
= 4.0 ns MAX.
rr
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage V
DC Reverse Voltage V
Note
Surge Current (1
Surge Current (1
Peak Forward Current
s)
µ
s) I
µ
Note
Peak Forward Current I
Average Rectified Current
Note
Average Rectified Current I
Maximum Temperatures
Junction Temperature T
Storage Temperature Range T
Thermal Resistance
Junction to Ambient
Note
Junction to Ambient R
Both diodes loaded simultaneously.
Note
R
I
FSM
FSM
I
FM
FM
I
th(j-a)
th(j-a)
RM
R
O
O
j
stg
75 V
50 V
6.0 A
4.0 A
450 mA
300 mA
150 mA
100 mA
150 °C
–55 to + 150 °C
1.0 °C/mW
0.85 °C/mW
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2
+0.1
−0
0.65
0.3
2.0±0.20.9±0.1
0.3
0.65
1
Marking
0 to 0.1
3
+0.1
−0
0.3
+0.1
−0.05
0.15
CONNECTION DIAGRAM (Top View)
2
3
1
Marking : A4
1. Cathode
2. Cathode
3. Anode
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Forward Voltage
Reverse Current I
Capacitance C
Reverse Recovery Time t
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Ja
an
F1
V
V
V
IF = 10 mA 0.72 1.0 V
F2
IF = 50 mA 0.88 1.1 V
F3
IF = 100 mA 1.0 1.2 V
R
VR = 50 V 0.1
t
VR = 0 V, f = 1.0 MHz 2.5 4.0 pF
rr
See Test Circuit. 4.0 ns
A
µ
©
1987
TYPICAL ELECTRICAL CURVES (TA = 25°C)
1SS303
100
50
20
10
5
2
1
- Forward Current - mA
F
I
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
20
FORWARD CURRENT vs.
FORWARD VOLTAGE
F
- Forward Voltage - V
V
TERMINAL CAPACITANCE vs.
REVERSE VOLTA GE
REVERSE CURRENT vs.
REVERSE VOLTA GE
100
50
20
10
5
2
- Reverse Current - µA
R
1
I
0.5
0.2
01020304050
R
- Reverse Voltage - V
V
REVERSE RECOVERY TIME vs.
FORWARD CURRENT
20
10
5
2
1
0.5
- Terminal Capacitance - pF
t
C
0.2
0.1
0.5 1 2 5 10 20 50 100
R
- Reverse Voltage - V
V
16
12
8
4
- Reverse Recovery Time - ns
rr
t
0 20 40 60 80 100
I
F
- Forward Current - mA
2
Data Sheet D16308EJ2V0DS
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