National Semiconductor MM54C89, MM74C89 Technical data

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MM54C89/MM74C89 64-Bit TRI-STATE Random Access Read/Write Memory

March 1988

MM54C89/MM74C89 64-Bit TRI-STATE
Random Access Read/Write Memory

General Description

The MM54C89/MM74C89 is a 16-word by 4-bit random ac­cess read/write memory. Inputs to the memory consist of
four address lines, four data input lines, a write
and a memory
are decoded internally to select each of the 16 possible
word locations. An internal address register latches the ad­dress information on the positive to negative transition of
the memory enable input. The four TRI-STATE data output
lines working in conjunction with the memory enable input
provide for easy memory expansion.

Address Operation: Address inputs must be stable t
or to the positive to negative transition of memory
is thus not necessary to hold address information stable for
more than t
ative transition of memory

Note: The timing is different than the DM7489 in that a positive to negative

transition of the memory
selected.

Write Operation: Information present at the data inputs is
written into the memory at the selected address by bringing
write

enable line. The four binary address inputs

after the memory is enabled (positive to neg-

HA

enable and memory enable low.

enable).

enable must occur for the memory to be

enable line

SA

enable.It

Logic and Connection Diagrams

Read Operation: The complement of the information which

was written into the memory is non-destructively read out at
the four outputs. This is accomplished by selecting the de­sired address and bringing memory
enable high.

When the device is writing or disabled the output assumes a
TRI-STATE (Hi-z) condition.

Features

Y

Wide supply voltage range 3.0V to 15V

pri-

Y

Guaranteed noise margin 1.0V

Y

High noise immunity 0.45 VCC(typ.)

Y

Low power fan out of 2

TTL compatibility driving 74L

Y

Low power consumption 100 nW/package (typ.)

Y

Fast access time 130 ns (typ.) at V

Y

TRI-STATE output

É

enable low and write

CC

Dual-In-Line Package

e

10V

Top View

Order Number MM54C89

or MM74C89

TL/F/5888– 1

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/5888

TL/F/5888– 2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Voltage at any Pin

Operating Temperature Range

MM54C89
MM74C89

Storage Temperature Range (TS)

b

0.3V to V

b

b

b

a

0.3V

CC

55§Ctoa125§C

40§Ctoa85§C

65§Ctoa150§C

Power Dissipation (P

Dual-In-Line 700 mW

)

D

Small Outline 500 mW

Operating V

Absolute Maximum V

Range 3.0V to 15V

CC

CC

Lead Temperature (TL)

(Soldering, 10 seconds) 260

18V

DC Electrical Characteristics Min/Max limits apply across temperature range, unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

CMOS TO CMOS

V

IN(1)

V

IN(0)

V

OUT(1)

V

OUT(0)

I

IN(1)

I

IN(0)

I

OZ

I

CC

Logical ‘‘1’’ Input Voltage V

Logical ‘‘0’’ Input Voltage V

Logical ‘‘1’’ Output Voltage V

Logical ‘‘0’’ Output Voltage V

Logical ‘‘1’’ Input Current V

Logical ‘‘0’’ Input Current V

Output Current in High V
Impedance State V

Supply Current V

CMOS/LPTTL INTERFACE

V

IN(1)

V

IN(0)

V

OUT(1)

V

OUT(0)

Logical ‘‘1’’ Input Voltage 54C, V

Logical ‘‘0’’ Input Voltage 54C, V

Logical ‘‘1’’ Output Voltage 54C, V

Logical ‘‘0’’ Output Voltage 54C, V

OUTPUT DRIVE (See 54C/74C Family Characteristics Data Sheet) (Short Circuit Current)

I

SOURCE

I

SOURCE

I

SINK

I

SINK

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Range’’ they are not
meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.

Output Source Current V
(P-Channel) T

Output Source Current V
(P-Channel) T

Output Sink Current V
(N-Channel) T

Output Sink Current V
(N-Channel) T

e

5.0V 3.5 V

CC

e

10V 8.0 V

V

CC

e

5.0V 1.5 V

CC

e

10V 2.0 V

V

CC

CC

V

CC

CC

V

CC

CC

CC

CC
CC

CC

74C, V

74C, V

74C, V

74C, V

CC

e

A

CC

e

A

CC

e

A

CC

e

A

e

e

e

e

e

e

e

e

e

e

e

e

e

25§C

25§C

25§C

25§C

eb

5.0V, I
10V, I

5.0V, I
10V, I

15V, V

15V, V

15V, Ve15V 0.005 1.0 mA
15V, V

10 mA 4.5 V

O

eb

10 mA 9.0 V

O

ea

10 mA 0.5 V

O

ea

10 mA 1.0 V

O

e

15V

IN

e

0V

IN

e

0V

O

b

1.0

b

1.0

b

0.005 1.0 mA

b

0.005 mA

b

0.005 mA

15V 0.05 300 mA

e

4.5V V

CC

e

4.75V V

CC

e

4.5V 0.8 V

CC

e

4.75V 0.8 V

CC

e

CC

e

CC

e

CC

e

CC

5.0V, V

10V, V

5.0V, V

10V, V

4.5V, I

4.75V, I

4.5V, I

4.75V, I

OUT

OUT

OUT

OUT

eb

360 mA 2.4 V

O

eb

360 mA 2.4 V

O

ea

360 mA 0.4 V

O

ea

360 mA 0.4 V

O

e

0V

e

0V

e

V

CC

e

V

CC

b

1.5 V

CC

b

1.5 V

CC

b

1.75

b

8.0

b

3.3 mA

b

15 mA

1.75 3.6 mA

8.0 16 mA

C

§

AC Electrical Characteristics* T

e

A

25§C, C

e

50 pF, unless otherwise noted

L

Symbol Parameter Conditions Min Typ Max Units

t

pd

t

ACC

t

SA

t

HA

t

ME

Propagation Delay from V
Memory Enable V

Access Time from V
Address Input V

Address Setup Time V

Address Hold Time V

Memory Enable Pulse Width V

e

5V 270 500 ns

CC

e

10V 100 220 ns

CC

e

5V 350 650 ns

CC

e

10V 130 280 ns

CC

e

5V 150 ns

CC

e

10V 60 ns

V

CC

e

5V 60 ns

CC

e

10V 40 ns

V

CC

e

5V 400 250 ns

CC

e

10V 150 90 ns

V

CC

2