National Semiconductor MM54C221, MM74C221 Technical data

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MM54C221/MM74C221 Dual Monostable Multivibrator
General Description
The MM54C221/MM74C221 dual monostable multivibrator is a monolithic complementary MOS integrated circuit. Each multivibrator features a negative-transition-triggered input and a positive-transition-triggered input, either of which can be used as an inhibit input, and a clear input.
Once fired, the output pulses are independent of further transitions of the A and B inputs and are a function of the external timing components C width is stable over a wide range of temperature and V
Connection Diagrams
EXT
and R
. The pulse
EXT
Pulse stability will be limited by the accuracy of external timing components. The pulse width is approximately de­fined by the relationship t information and applications, see AN-138.
W(OUT)
&
C
EXTREXT
Features
Y
Wide supply voltage range 4.5V to 15V
Y
Guaranteed noise margin 1.0V
.
Y
CC
High noise immunity 0.45 VCC(typ.)
Y
Low power TTL compatibility fan out of 2
MM54C221/MM74C221 Dual Monostable Multivibrator
February 1988
. For further
driving 74L
Timing Component
TL/F/5904– 1
Truth Table
Inputs Outputs
Clear A B Q Q
LXXLH
XHXLH
XXLLH
HL
H
v
u
H Éß
Éß
Dual-In-Line Package
Top View
Order Number MM54C221 or MM74C221
e
H
High level
e
Low level
L
e
Transition from low to high
u
e
Transition from high to low
v
e
One high level pulse
É
e
One low level pulse
ß
e
Irrelevant
X
TL/F/5904– 2
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/5904
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Voltage at Any Pin
Operating Temperature Range
MM54C221 MM74C221
Storage Temperature Range
b
0.3V to V
b
b
b
a
0.3V
CC
55§Ctoa125§C
40§Ctoa85§C
65§Ctoa150§C
Power Dissipation
Dual-In-Line 700 mW Small Outline 500 mW
Operating V
Absolute Maximum V
R
EXT
Range 4.5V to 15V
CC
t
80 VCC(X)
CC
18V
Lead Temperature (Soldering, 10 seconds) 260§C
DC Electrical Characteristics Max/min limits apply across temperature range, unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
CMOS to CMOS
V
IN(1)
V
IN(0)
V
OUT(1)
V
OUT(0)
I
IN(1)
I
IN(0)
I
CC
I
CC
Logical ‘‘1’’ Input Voltage V
Logical ‘‘0’’ Input Voltage V
Logical ‘‘1’’ Output Voltage V
Logical ‘‘0’’ Output Voltage V
Logical ‘‘1’’ Input Current V
Logical ‘‘0’’ Input Current V
Supply Current (Standby) V
Supply Current V (During Output Pulse) Q2
Leakage Current at R/C
EXT
Pin V
CMOS/LPTTL Interface
V
IN(1)
V
IN(0)
V
OUT(1)
V
OUT(0)
Logical ‘‘1’’ Input Voltage 54C V
Logical ‘‘0’’ Input Voltage 54C V
Logical ‘‘1’’ Output Voltage 54C V
Logical ‘‘0’’ Output Voltage 54C V
Output Drive (See 54C/74C Family Characteristics Data Sheet) (Short Circuit Current)
I
SOURCE
I
SOURCE
I
SINK
I
SINK
Output Source Current V (P-Channel) T
Output Source Current V (P-Channel) T
Output Sink Current V (N-Channel) T
Output Sink Current V (N-Channel) T
e
5V 3.5 V
CC
e
V
10V 8.0 V
CC
e
5V 1.5 V
CC
e
V
10V 2.0 V
CC
e
eb
5V, I
CC
e
V
10V, I
CC
e
5V, I
CC
e
V
10V, I
CC
e
15V, V
CC
e
15V, V
CC
e
15V, R
CC
e
Q1, Q2
e
15V, Q1eLogic ‘‘1’’,
CC
e
Logic ‘‘0’’
e
V
5V, Q1eLogic ‘‘1’’,
CC
e
Q2
Logic ‘‘0’’
e
15V, V
CC
CC
74C V
CC
CC
74C V
CC
CC
74C V
CC
CC
74C V
CC
e
5V
CC
e
25§C, V
A
e
10V
CC
e
25§C, V
A
e
5V
CC
e
25§C, V
A
e
10V
CC
e
25§C, V
A
10 mA 4.5 V
O
eb
10 mA 9.0 V
O
ea
10 mA 0.5 V
O
ea
10 mA1V
O
e
15V 0.005 1.0 mA
IN
e
0V
IN
e %
EXT
Logic ‘‘0’’ (Note 3)
,
(Figure 4)
(Figure 4)
e
5V 0.01 3.0 mA
CEXT
e
4.5V V
e
4.75V V
e
4.5V 0.8 V
e
4.75V 0.8 V
e
e
e
e
4.5V, I
4.75V, I
4.5V, I
4.75V, I
e
OUT
e
OUT
e
OUT
e
OUT
eb
360 mA 2.4 V
O
eb
360 mA 2.4 V
O
e
360 mA 0.4 V
O
e
360 mA 0.4 V
O
0V
0V
V
CC
V
CC
b
1.0
b
0.005 mA
0.05 300 mA
15 mA
2mA
b
1.5 V
CC
b
1.5 V
CC
b
1.75 mA
b
8mA
1.75 mA
8mA
2
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