National Semiconductor LP124 Technical data
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LP124/LP2902/LP324 Micropower Quad
Operational Amplifier
LP124/LP2902/LP324 Micropower Quad Operational Amplifier
February 1995
General Description
The LP124 series consists of four independent, high gain
internally compensated micropower operational amplifiers.
These amplifiers are specially suited for operation in battery
systems while maintaining good input specifications, and
extremely low supply current drain. In addition, the LP124
has an input common mode range, and output source range
which includes ground, making it ideal in single supply applications.
These amplifiers are ideal in applications which include portable instrumentation, battery backup equipment, and other
circuits which require good DC performance and low supply
current.
Connection Diagram
Dual-in-Line (J, N) and SO (M)
Simplified Schematic
Features
Y
Low supply current 125 mA (max)
Y
Low offset voltage 2 mV (max)
Y
Low input bias current 4 nA (max)
Y
Input common mode to GND
Y
Interfaces to CMOS logic
Y
Wide supply range 3VkV
Y
Small Outline Package available
Y
Pin-for-pin compatible with LM124
a
k
32V
Order Number LP124J or LP324J
See NS Package Number J14A
Order Number LP324M or LP2902M
See NS Package Number M14A
Order Number LP324N or LP2902N
See NS Package Number N14A
C
1996 National Semiconductor Corporation RRD-B30M56/Printed in U. S. A.
TL/H/8562
TL/H/8562– 1
TL/H/8562– 2
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Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
b
0.3V to 32V
b
0.3V to 26V
g
g
g
16V
13V
500V
Supply Voltage 32V or
LP2902 26V or
Differential Input Voltage 32V
LP2902 26V
Input Voltage (Note 1)
LP2902
Output Short-Circuit to GND Continuous
(One Amplifier) (Note 2)
a
V
s
15V and T
e
25§C
A
ESD Susceptibility (Note 9)
Operating Conditions
Package
Power Dissipation 500 mW 500 mW 500 mW
(Note 3)
T
Max 150§C 150§C 150§C
j
i
ja
Operating Temp. Range (Note 4) (Note 4) (Note 4)
Storage Temp. Range
Soldering
Information (10 sec.) 300
Vapor Phase (60 sec.) 215
Infrared (15 sec.) 220
JNM
90§C/W 90§C/W 140§C/W
b
65§CsTs150§C
C 260§C
§
Electrical Characteristics (Note 5)
LP124 LP2902 (Note 8) LP324
Symbol Parameter Conditions
V
Input Offset 1 2 7 24 10 24 9 mV
os
Voltage 4 (Max)
I
Input Bias 1 4 8 220 40 210 20 nA
b
Current 8 (Max)
I
Input Offset 0.1 1 2 0.5 4 8 0.2 2 4 nA
os
Current 2 (Max)
A
Voltage R
vol
Gain to GND 60 (Min)
CMRR Common V
Mode Rej. 0VsV
Ratio V
PSRR Power V
e
10k 100 70 60 70 40 30 100 50 40 V/mV
L
a
e
V
30V
a
e
30V 100 85 75 90 80 75 90 80 75 dB
cm
a
k
b
V
cm
a
1.5
e
5V to 30V 100 85 75 90 80 75 90 80 75 dB
Supply Rej. 80 (Min)
Ratio
I
Supply R
s
Current 150 (Max)
V
Output I
o
Voltage to GND.
Swing V
I
Output V
out
Source Source V
Current
I
Output V
out
Sink Sink V
Current
I
Output V
out
Sink Sink V
Current
I
Output Vin(diff)e1V 20 25 35 20 25 35 20 25 35 mA
source
Short to GND 35 35 35 (Max)
e %
L
e
350 mA
L
e
0V
cm
e
I
350 mA
L
a
to V
e
V
0V
cm
e
3V 11 9 4 10 7 4 10 7 4 mA
o
(diff)e1V 4 (Min)
in
e
1.5V 6 5 4 54 3 54 3 mA
o
(diff)e1V 4 (Min)
in
e
1.5V 5 3 1.5 42 1 42 1 mA
o
e
0V 0.5 (Min)
cm
Tested Design Tested Design Tested Design
Typ Limit Limit Typ Limit Limit Typ Limit Limit
(Note 6) (Note 7) (Note 6) (Note 7) (Note 6) (Note 7)
80 (Min)
85 125 200 85 150 250 85 150 250 mA
3.6 3.4 V
a
b
1.9V 3.6 3.4 V
a
b
1.9V 3.6 3.4 V
3.1 (Min)
0.7 0.8 1.0 0.7 0.8 1.0 0.7 0.8 1.0 V
1.0 (Max)
a
b
C
§
C
§
Units
Limits
1.9V V
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Electrical Characteristics (Note 5) (Continued)
LP124 LP2902 (Note 8) LP324
Symbol Parameter Conditions
I
sink
V
Drift
I
os
Drift
Output Vin(diff)e1V 15 30 45 15 30 45 15 30 45 mA
Short to V
a
os
GBW Gain
Bandwidth 100 100 100 KHz
Product
S
Slew Rate 50 50 50 V/mS
r
Note 1: The input voltage is not allowed to go more thanb0.3V below Vb(GND) as this will turn on a parasitic transistor causing large currents to flow through the
device.
Note 2: Short circuits from the output to GND can cause excessive heating and eventual destruction. The maximum sourcing output current is approximately 30 mA
independent of the magnitude of V
(particularly at elevated temperatures) and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 3: For operation at elevated temperatures, these devices must be derated based on a thermal resistance of i
Note 4: The LP124 may be operated from
from 0
Note 5: Boldface numbers apply at temperature extremes. All other numbers apply only at T
connected to GND unless otherwise specified.
Note 6: Guaranteed and 100% production tested.
Note 7: Guaranteed (but not 100% production tested) over the operating supply voltage range (3.0V to 32V for the LP124, LP324, and 3.0V to 26V for the LP2902),
and the common mode range (0V to V
Note 8: The LP2902 operating supply range is 3V to 26V, and is not tested above 26V.
Note 9: The test circuit used consists of the human body model of 100 pF in series with 1500X.
CsT
§
s
a
70§C.
A
a
. At values of supply voltage in excess of 15 VDC, continuous short-circuit to GND can exceed the power dissipation ratings
b
55§CsT
a
b
1.5V), unless otherwise specified. These limits are not used to calculate outgoing quality levels.
Tested Design Tested Design Tested Design
Typ Limit Limit Typ Limit Limit Typ Limit Limit
(Note 6) (Note 7) (Note 6) (Note 7) (Note 6) (Note 7)
40 (Max)
71010mV/C
5 10 10 pA/C
e
5V, V
a
T
ijaPD.
j
A
e
V/2, and R
cm
L
s
a
125§C. The LP2902 may be operated fromb40§CsT
A
and Tjmax. T
ja
s
a
85§C, and the LP324 may be operated
A
j
e
25§C, V
a
e
e
T
A
Units
Limits
e
100k
§
§
Typical Performance Curves
Input Voltage Range Input Current Supply Current
Voltage Gain Frequency Response
Open Loop
Power Supply
Rejection Ratio
TL/H/8562– 18
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