National Semiconductor LMX2470 Technical data

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LMX2470

2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz
Integer-N PLL

LMX2470 2.6 GHz Delta-Sigma Fractional-N PLL with 800 MHz Integer-N PLL

April 2003

General Description

The LMX2470 is a low power, high performance delta-sigma
fractional-N PLL with an auxiliary integer-N PLL. The device
is fabricated using National Semiconductor’s advanced BiC­MOS process.

With delta-sigma architecture, fractional spur compensation
is achieved with noise shaping capability of the delta-sigma
modulator and the inherent low pass filtering of the PLL loop
filter. Fractional spurs at lower frequencies are pushed to
higher frequencies outside the loop bandwidth. Unlike ana­log compensation, the digital feedback techniques used in
the LMX2470 are highly resistant to changes in temperature
and variations in wafer processing. With delta-sigma archi­tecture, the ability to push close in spur and phase noise
energy to higher frequencies is a direct function of the modu­lator order. The higher the order, the more this energy can be
spread to higher frequencies. The LMX2470 has a program­mable modulator up to order four, which allows the designer
to select the optimum modulator order to fit the phase noise,
spur, and lock time requirements of the system.

Programming is fast and simple. Serial data is transferred
into the LMX2470 via a three line MICROWIRE interface
(Data, Clock, Load Enable). Nominal supply voltage is 2.5 V.
The LMX2470 features a typical current consumption of 4.1
mA at 2.5 V. The LMX2470 is available in a 24 lead 3.5 X 4.5
X 0.6 mm package.

Features

n Low in-band phase noise and low fractional spurs
n 12 bit or 22 bit selectable fractional modulus
n Up to 4th order programmable delta-sigma modulator
n Enhanced Anti-Cycle Slip Fastlock Circuitry

Fastlock
Cycle slip reduction
Integrated timeout counters

n Digital lock detect output
n Prescalers allow wide range of N values

RF PLL: 16/17/20/21
IF PLL: 8/9 or 16/17

n Crystal Reference Frequency up to 110 MHz
n On-chip crystal reference frequency doubler.
n Phase Comparison Frequency up to 30 MHz
n Hardware and software power-down control
n Ultra low consumption: I

= 4.1 mA (typical)

CC

Applications

n Cellular Phones and Base Stations

CDMA, WCDMA, GSM/GPRS, TDMA, EDGE, PDC

n Applications requiring fine frequency resolution
n Satellite and Cable TV Tuners
n WLAN Standards

Functional Block Diagram

20059301

© 2003 National Semiconductor Corporation DS200593 www.national.com

Connection Diagram

LMX2470

Pin Descriptions

#

Pin

1 CPoutRF O RF charge pump output.

2 GND - Ground

3 GND - RF Ground

4 GND - Ground for RF PLL digital circuitry.

5 FinRF I RF prescaler input. Small signal input from the VCO.

6 FinRF* I RF prescaler complimentary input. For single-ended operation, a bypass capacitor should

7 VccRF RF PLL power supply voltage input. Must be equal to VccIF . May range from 2.25V to

8 EN I Chip enable input. High impedance CMOS input. When EN is high, the chip is powered

9 ENOSC I This pin should be grounded for normal operation.

10 CLK I MICROWIRE Clock. High impedance CMOS Clock input. Data for the various counters is

11 DATA I MICROWIRE Data. High impedance binary serial data input.

12 LE MICROWIRE Load Enable. High impedance CMOS input. Data stored in the shift

13 Ftest/LD O Test frequency output / Lock Detect

14 VddIF - Digital power supply for IF PLL

15 VccIF - IF power supply voltage input. Must be equal to VccRF. Input may range from 2.25 V to

16 GND - Ground for RF PLL digital circuitry.

17 FinIF I IF prescaler input. Small signal input from the VCO.

18 GND - Digital ground for IF PLL

19 CPoutIF O IF PLL charge pump output

20 FLoutIF O IF Fastlock Output. Also functions as Programmable TRI-STATE CMOS output.

21 OSCout* I/O Complementary reference input or oscillator output.

22 OSCin I Reference input

23 VddRF - Digital power supply for RF PLL

24 FLoutRF O RF Fastlock Output. Also functions as Programmable TRI-STATE CMOS output.

Pin

Name

24-Pin CSP (SLE) Package

20059322

I/O Pin Description

be placed as close as possible to this pin and be connected directly to the ground plane.

2.75V. Bypass capacitors should be placed as close as possible to this pin and be
connected directly to the ground plane.

up, otherwise it is powered down.

clocked into the 24 bit shift register on the rising edge.

registers is loaded into the internal latches when LE goes HIGH

2.75 V. Bypass capacitors should be placed as close as possible to this pin and be
connected directly to the ground plane.

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Absolute Maximum Ratings (Notes 1, 2)

LMX2470

Parameter Symbol

Power Supply Voltage V

V

Voltage on any pin with GND =V

=0V V

SS

Storage Temperature Range T

Lead Temperature (Solder 4 sec.) T

Min Typ Max

CC

DD

i

s

L

-0.3 3.0 V

V

CC

-0.3 VCC+ 0.3 V

-65 +150 ˚C

Value

Units

V

CC

+260 ˚C

V

Recommended Operating Conditions

Parameter Symbol

Power Supply Voltage (Note 1) V

Operating Temperature T

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. "Recommended Operating Conditions" indicate conditions for
which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical
Characteristics. The guaranteed specifications apply only for the test conditions listed. Note also that these maximum ratings imply that the voltage at all the power
supply pins of VccRF, VccIF, VddRF, and VddIF are the same. V

Note 2: This Device is a high performance RF integrated circuit with an ESD rating
be done at ESD-free workstations.

Electrical Characteristics (V

CC

V

DD

A

will be used to refer to the voltage at these pins.

CC

= 2.5V; -40˚C ≤ TA≤ +85˚C unless otherwise specified)

CC

Min Typ Max

2.25 2.75 V

V

CC

-40 +85 ˚C

<

2 kV and is ESD sensitive. Handling and assembly of this device should only

Symbol Parameter Conditions

Icc PARAMETERS

I

RF Power Supply Current, RF

CC

Synthesizer

IF PLL OFF
RF PLL ON
Charge Pump TRI-STATE
OSC=0

IF Power Supply Current, IF

I

CC

Synthesizer

IF PLL ON
RF PLL OFF
Charge Pump TRI-STATE
OSC=0

TOTAL Power Supply Current,

I

CC

Entire Synthesizer

IF PLL ON
RF PLL ON
Charge Pump TRI-STATE
OSC=0

PD Power Down Current EN = ENOSC = 0V

I

CC

CLK, DATA, LE = 0V

RF SYNTHESIZER PARAMETERS

f

FinRF

p

FinRF

f

COMP

I

SRCE RF Charge Pump Source

CPoutRF

Operating Frequency 500 2600 MHz

Input Sensitivity -15 0 dBm

Phase Detector Frequency 30 MHz

RF_CPG = 0

Current

V

CPoutRF=VCC

/2

RF_CPG = 1
V

CPoutRF=VCC

/2

... ... µA

RF_CPG = 15
V

CPoutRF=VCC

/2

Value

V

CC

Value

Min Typ Max

2.7 3.9 mA

1.4 2.3 mA

4.1 6.0 mA

110µA

100 µA

200 µA

1600 µA

Units

V

Units

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Electrical Characteristics (V

= 2.5V; -40˚C ≤ TA≤ +85˚C unless otherwise specified) (Continued)

CC

LMX2470

Symbol Parameter Conditions

RF SYNTHESIZER PARAMETERS

I

SINK RF Charge Pump Sink

CPoutRF

Current

RF_CPG = 0
V

CPoutRF=VCC

/2

RF_CPG = 1
V

CPoutRF=VCC

/2

... ... µA

RF_CPG = 15

I

TRI RF Charge Pump

CPoutRF

V

CPoutRF=VCC

0.4 ≤ V

CPoutRF

/2

≤ VCC-0.4
TRI-STATE Current
Magnitude

%MIS RF CP Sink vs. CP Source

I

CPoutRF

Mismatch

I

%V RF CP Current vs. CP

CPoutRF

Voltage

I

%TEMP RF CP Current vs.

CPoutRF

V

CPoutRF

= 25˚C

T

A

0.4 ≤ V
= 25˚C

T

A

V

CPoutRF

=VCC/2

CPoutRF

=VCC/2

≤ VCC-0.4

Temperature

IF SYNTHESIZER PARAMETERS

f

FinIF

p

FinIF

f

COMP

I

SRCE IF Charge Pump Source

CPoutIF

Operating Frequency 75 800 MHz

IF Input Sensitivity -15 0 dBm

Phase Detector Frequency 10 MHz

IF_CPG = 0

Current

V

CPoutIF

=VCC/2

IF_CPG = 1

CPoutIF

CPoutIF

=VCC/2

=VCC/2

I

SINK IF Charge Pump Sink

CPoutIF

Current

V

IF_CPG = 0
V

IF_CPG = 1

CPoutIF

=VCC/2

CPoutIF

≤ VCCRF -0.4

I

TRI IF Charge Pump

CPoutIF

V

0.4 ≤ V

TRI-STATE Current
Magnitude

%MIS IF CP Sink vs. CP Source

I

CPoutIF

Mismatch

I

%V IF CP Current vs. CP

CPoutIF

Voltage

I

%TEMP IF CP Current vs.

CPoutIF

V

CPoutIF

= 25˚C

T

A

0.4 ≤ V
= 25˚C

T

A

V

CPoutIF

=VCC/2

CPoutIF

=VCC/2

≤ VCC-0.4

Temperature

OSCILLATOR PARAMETERS

f

OSCin

v

OSCin

I

OSCin

Oscillator Operating
Frequency

OSC2X = 0 5 110 MHz

OSC2X = 1 5 20 MHz

Oscillator Input Sensitivity 0.5 V

Oscillator Input Current -100 100 µA

DIGITAL INTERFACE (DATA, CLK, LE, EN, ENRF, Ftest/LD, FLoutRF, FLoutIF)

V

IH

V

IL

I

IH

I

IL

V

OH

High-Level Input Voltage 1.6 V

Low-Level Input Voltage 0.4 V

High-Level Input Current VIH=V

CC

Low-Level Input Current VIL= 0 V -1.0 1.0 µA

High-Level Output Voltage IOH= -500 µA VCC-0.4 V

Value

Min Typ Max

Units

-100 µA

-200 µA

-1600 µA

210nA

310%

515%

8%

1mA

4mA

-1 mA

-4 mA

210nA

3%

815%

8%

CC

CC

-1.0 1.0 µA

V

V

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LMX2470

Electrical Characteristics (V

Symbol Parameter Conditions

= 2.5V; -40˚C ≤ TA≤ +85˚C unless otherwise specified) (Continued)

CC

Value

Min Typ Max

Units

DIGITAL INTERFACE (DATA, CLK, LE, EN, ENRF, Ftest/LD, FLoutRF, FLoutIF)

V

OL

Low-Level Output Voltage IOL= 500 µA 0.4 V

MICROWIRE INTERFACE TIMING

T

CS

T

CH

T

CWH

T

CWL

T

ES

T

EW

Data to Clock Set Up Time See Microwire Input Timing 50 ns

Data to Clock Hold Time See Microwire Input Timing 10 ns

Clock Pulse Width High See Microwire Input Timing 50 ns

Clock Pulse Width Low See Microwire Input Timing 50 ns

Clock to Load Enable Set
Up Time

See Microwire Input Timing

50 ns

Load Enable Pulse Width See Microwire Input Timing 50 ns

PHASE NOISE

L

RF RF Synthesizer Normalized

F1Hz

Phase Noise Contribution
(Note 3)

RF_CPG = 0 -200 dBc/Hz

RF_CPG = 3 -206 dBc/Hz

RF_CPG = 7 -208 dBc/Hz

RF_CPG = 15 -210 dBc/Hz

L

IF IF Synthesizer Normalized

F1Hz

Phase Noise Contribution

Applies to both low and high
current modes -209 dBc/Hz

(Note 3)

Note 3: Normalized Phase Noise Contribution is defined as: LN(f) = L(f) – 20log(N) – 10log(f
measured at an offset frequency, f, ina1HzBandwidth. The offset frequency, f, must be chosen sufficiently smaller than the PLL loop bandwidth, yet large enough
to avoid substantial phase noise contribution from the reference source. The offset chosen was 4 KHz.

) where L(f) is defined as the single side band phase noise

COMP

MICROWIRE INPUT TIMING DIAGRAM

20059372

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Typical Performance Characteristics : Sensitivity (Note 4)

LMX2470

RF N Counter Sensitivity

= 25˚C

T

A

20059345

RF N Counter Sensitivity

= 2.5 V

V

CC

20059346

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Typical Performance Characteristics : Sensitivity (Note 4) (Continued)

IF N Counter Sensitivity

T

= 25˚C

A

LMX2470

IF N Counter Sensitivity

= 2.5 V

V

CC

20059347

20059348

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Typical Performance Characteristics : Sensitivity (Note 4) (Continued)

LMX2470

OSCin Counter Sensitivity

OSC=0

= 25˚C

T

A

20059349

OSCin Counter Sensitivity

OSC=0

= 2.5 V

V

CC

20059350

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Typical Performance Characteristic : FinRF Input Impedance (Note 4)

20059353

FinRF Input Impedance

Frequency (MHz) Real (Ohms) Imaginary (Ohms)

500 214 -255

600 175 -245

700 144 -230

800 118 -216

900 98 -203

1000 80 -189

1100 69 -177

1200 57 -165

1300 48 -153

1400 39 -141

1500 34 -130

1600 28 -119

1700 24 -110

1800 20 -101

1900 17 -94

2000 14 -87

2100 13 -82

2200 11 -77

2300 10 -72

2400 8 -67

2500 7 -62

2600 7 -56

2700 7 -53

2800 7 -46

2900 7 -41

3000 7 -39

LMX2470

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Typical Performance Characteristic : FinIF Input Impedance (Note 4)

LMX2470

20059354

FinIF Input Impedance

Freqeuncy (MHz) Real (Ohms) Imaginary (Ohms)

50 580 -313

100 500 -273

150 445 -250

200 410 -256

250 378 -259

300 349 -264

350 322 -267

400 297 -270

450 274 -271

500 253 -272

550 232 -272

600 214 -269

650 198 -265

700 184 -262

750 170 -259

800 157 -256

900 151 -253

1000 143 -250

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Typical Performance Characteristic : OSCin Input Impedance (Note 4)

20059355

LMX2470

OSCin Input Impedance

Frequency (MHz) Real (Ohms) Imaginary (Ohms) Magnitude (Ohms)

50 2200 -4700 5189

10 710 -2700 2792

20 229 -1500 1517

30 133 -988 997

40 93 -752 758

50 74 -606 611

60 62 -505 509

70 53 -435 438

80 49 -382 385

90 45 -341 344

100 42 -309 312

110 40 -282 285

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