National Semiconductor LMV232 Technical data

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LMV232
Dual-Channel Integrated Mean Square Power Detector
for CDMA & WCDMA

LMV232 Dual-Channel Integrated Mean Square Power Detector for CDMA & WCDMA

February 2005

General Description

The LMV232 dual RF detector is designed for RF transmit
power measurement in mobile phones. This dual mean
square IC is especially suited for accurate power measure­ment of RF signals exhibiting high peak-to-average ratios
used in 3G and UMTS/CDMA applications. The LMV232
saves calibration steps and system certification and is highly
accurate. The circuit operates with a single supply from 2.5
to 3.3V.

The LMV232 contains a mean square detector with two
sequentially selectable RF inputs. The RF input power range
of the device has been optimized for use with a 20 dB
directional coupler, without the need for additional external
components. A single external RC combination between FB
and OUT provides an externally configurable gain and LF
filter bandwidth of the device.

The device has two digital interfaces. A shutdown function is
available to set the device in a low-power shutdown mode. In
case SD = HIGH, the device is in shutdown, if SD = LOW the
device is active. The Band-Select function controls the se­lection of the active RF input channel. In case BS = HIGH,

1 is active. In case BS = LOW, RFIN2 is active.

RF

IN

The dual mean square detector is offered in an 8-bump
micro SMD 1.5 x 1.5 x 0.6 mm package. This micro SMD
package has the smallest footprint and height.

Typical Application

Features

n>20 dB square-law detection range
n 2 sequentially selectable RF inputs
n Low power consumption shutdown mode
n Externally configurable gain and LF filter bandwidth.
n Internal 50Ω RF termination impedance
n Optimized for use with 20 dB directional coupler
n Lead free 8-bump micro SMD package 1.5 x 1.5 x 0.6

mm

Applications

n 3G mobile communications
n UMTS
n WCDMA
n CDMA2000
n TD-SCDMA
n RF control
n Wireless LAN
n PC Card and GPS modules

20127801

© 2005 National Semiconductor Corporation DS201278 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

LMV232

please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage

- GND 3.6V Max

V

DD

ESD Tolerance (Note 2)

Human Body Model 2000V

Machine Model 200V

Junction Temperature (Note 3) 150˚C Max

Mounting Temperature

Infrared or Convection (20 sec) 235˚C

Operating Ratings (Note 1)

Supply Voltage 2.5V to 3.3V

Operating Temperature Range -40˚C to +85˚C

RF Frequency Range 50 MHz to 2 GHz

Storage Temperature Range -65˚C to 150˚C

2.7 DC and AC Electrical Characteristics

Unless otherwise specified, all limits are guaranteed to VDD= 2.7V; TJ= 25˚C. Boldface limits apply at temperature extremes.
(Note 4)

Symbol Parameter Condition Min Typ Max Units

I

DD

Supply Current Active Mode: SD = LOW, No RF Input

Power Present

Shutdown: SD = 1.8V, No RF Input
Power Present

V

LOW

BS and SD Logic Low Level
(Note 6)

V

HIGH

BS and SD Logic High Level

1.8 V

(Note 6)

I

BS,ISD

V

OUT

Current into BS and SD pins 5 µA

Output Voltage Swing From Positive Rail, Sourcing,

FB = 0V, I

OUT

=1mA

From Negative Rail, Sinking,

I

OUT

FB = 2.7V, I

Output Short Circuit Sourcing, FB = 0V, V

OUT

=−1mA

OUT

= 2.6V 3.7

2.7

Sinking, FB = 2.7V, V

= 0.1V 3.7

OUT

2.7

V

OUT

Output Voltage (Pedestal) No RF Input Power 235

230

V

PED

Pedestal Variation Over
Temperature (Note 10)

I

OS

Offset Current Variation Over
Temperature (Note 10)

t

ON

Turn-on-Time (Note 9) No RF Input Power Present, Output

Loaded with 10 pF

t

R

Rise Time (Note 7) Step from No Power to 0 dBm

Applied, Output Loaded with 10 pF

e

n

Output Referred Voltage Noise RF Input = 1800 MHz, -10 dBm,

Measured at 10 kHz

GBW Gain Bandwidth Product 3.7 MHz

SR Slew Rate 1.8

1.0

R

IN

P

IN

DC Resistance (Note 7) 50.8 Ω

RF Input Power Range RF Input Frequency = 900 MHz -11

9.8 11

13

0.09 5

30

0.8 V

20 80

90

20 60

70

5.1

5.5

254 275

280

5.4

1.17

2.0 6.0

4.5

400 nV/

3.0 V/µs

+13

-24
0

mA

µA

mV

mV

mA

mV

mV

µA

µs

µs

dBm

dBV

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2.7 DC and AC Electrical Characteristics (Continued)

Unless otherwise specified, all limits are guaranteed to VDD= 2.7V; TJ= 25˚C. Boldface limits apply at temperature extremes.
(Note 4)

Symbol Parameter Condition Min Typ Max Units

K

DET

f

LOW

f

HIGH

A

ISO

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model: 1.5 kΩ in series with 100 pF. Machine model, 0Ω in series with 100 pF.

Note 3: The maximum power dissipation is a function of T

(T

J(MAX)-TA

Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T

Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω.

Note 6: All limits are guaranteed by design or statistical analysis.

Note 7: Typical values represent the most likely parametric norm.

Note 8: Device is set in active mode with a 10 kΩ resistor from V

pin using a 100 pF coupling capacitor.

Note 9: Turn-on time is measured by connecting a 10 kΩ resistor to the RF
of resistor R2 and capacitor C adds an additional delay.

Note 10: Typical numbers represent the 3-sigma value of 10k units. 3-sigma value of variation between −40˚C / 25˚C and variation between 25˚C / 85˚C.

Detection Slope 900 MHz 21

1800 MHz 10

1900 MHz 10

µA/mW

2000 MHz 10

LF Input Corner Frequency Lower −3 dB Point of Detection Slope 60 MHz

HF Input Corner Frequency Upper −3 dB Point of Detection Slope 1.0 GHz

Channel Isolation 900 MHz 58

1800 MHz 62

1900 MHz 58

dB

2000 MHz 55

, θJAand TA. The maximum allowable power dissipation at any ambient temperature is PD=

)/θJA. All numbers apply for packages soldered directly into a PC board.

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J=TA

J(MAX)

to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC coupled to the RFIN/E

DD

pin. Be aware that in the actual application on the front page, the RC-time constant

IN/EN

>

J

LMV232

TA.

N

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Connection Diagram

LMV232

8-Bump micro SMD

20127802

Top View

Pin Description

Pin Name Description

Power Supply B3 V

DD

B1 GND Power Ground

Digital Inputs C3 SD Schmitt-triggered Shutdown. The device is active for SD = LOW. For SD = HIGH, it is

C2 BS Schmitt-triggered Band Select pin. When BS = HIGH, RF

Analog Inputs A1 RF

C1 RF

Feedback A2 FB Connected to inverting input of output amplifier. Enables user-configurable gain and

Output A3 Out Amplifier output

Positive Supply Voltage

brought into a low-power shutdown mode.

1 is selected, when BS =

IN

LOW, RF

1 RF Input connected to the coupler output with optional attenuation to measure the

IN

Power Amplifier (PA) / Antenna RF power levels. Both RF inputs of the device are

2

IN

internally terminated with a 50Ω resistance.

2 is selected.

IN

bandwidth through external feedback network.

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Bump micro SMD

Note: This product is only offered with lead free bumps.

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LMV232TL

LMV232TLX 3k Units Tape and Reel

A

I02

250 Units Tape and Reel

TLA08AAA