National Semiconductor LMV1031-20 Technical data

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LMV1031-20
Amplifier for Internal 3-Wire Analog Microphones and
External Preamplifier

LMV1031-20 Amplifiers for Internal 3-Wire Analog Microphones and External Preamplifier

October 2005

General Description

The LMV1031 audio amplifier is an ideal replacement for the
JFET preamplifier that is currently used in the electret micro­phones. The LMV1031 is optimized for applications that
require extended battery life, such as Bluetooth communica­tion links. The supply current for the LMV1031 is only 72 µA.
This is a dramatic reduction from that required for a JFET
equipped microphone. The LMV1031, with its separate out­put and supply pins, offers a higher PSRR and eliminates the
need for additional external components.

The LMV1031 is guaranteed to operate from 2V to 5V supply
voltage over the full temperature range, has a fixed voltage
gain of 20 dB and enhanced SNR performance. The
LMV1031 is optimized for an output biasing of 1.09V.

The LMV1031 has less than 200Ω of output impedance over
the full audio bandwidth. The gain response of the LMV1031
is flat within the audio band and is stable over the tempera­ture range.

The LMV1031 is available in a large dome 4-bump ultra thin
micro SMD package that can easily fit on the PCB inside the
miniature microphone metal can (package). This package is
designed for microphone PCBs requiring 1 kg adhesion
criteria.

Block Diagram

Features

(Typical LMV1031-20, 2V Supply; Unless Otherwise Noted)

n Signal to noise ratio 62 dB
n Output voltage noise (A-weighted) −86 dBV
n Low supply current 72 µA
n Supply voltage 2V to 5V
n Input impedance
n Max input signal 108 mV
n Output voltage 1.09V
n Temperature range −40˚C to 85˚C
n Large Dome 4-Bump micro SMD package with improved

adhesion technology.

>

100 MΩ

PP

Applications

n Mobile communications - Bluetooth
n Accessory microphone products
n Cellular phones
n PDAs

Electret Microphone

20150804

20150801

© 2005 National Semiconductor Corporation DS201508 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

LMV1031-20

Storage Temperature Range −65˚C to 150˚C

Junction Temperature (Note 6) 150˚C max

Mounting Temperature

Infrared or Convection (20 sec.) 235˚C

ESD Tolerance (Note 2)

Human Body Model 2500V

Operating Ratings (Note 1)

Machine Model 250V

Supply Voltage

- GND 5.5V

V

DD

Supply Voltage 2V to 5V

Temperature Range −40˚C to +85˚C

2V and 5V Electrical Characteristics (Note 3)

Unless otherwise specified, all limits are guaranteed for TJ= 25˚C and VDD= 2V and 5V. Boldface limits apply at the tempera­ture extremes.

Min

Symbol Parameter Conditions

I

DD

Supply Current VIN= GND 72 90

SNR Signal to Noise Ratio f = 1 kHz, VIN=18mV

THD Total Harmonic Distortion f = 1 kHz, V

e

n

A

V

Output Noise A-Weighted −86 dBV

Gain f = 1 kHz, VIN=18mV

=18mV

IN

PP

PP

PP

(Note 4)

19.18

19.00

f

LOW

f

HIGH

V

Z

C

V

IN

IN

IN

OUT

Lower −3 dB Roll Off Frequency R

Upper −3 dB Roll Off Frequency R

SOURCE

SOURCE

Max Input Signal f = 1 kHz and THD+N<1% 108 mV

Input Impedance

Input Capacitance 2pF

Output Voltage VIN= GND 890

=50Ω,VIN=18mV

=50Ω,VIN=18mV

PP

PP

875

R

O

PSRR Power Supply Rejection Ratio 2V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: The human body model (HBM) is 1.5 kΩ in series with 100 pF. The machine model is 0Ω in series with 200 pF.

Note 3: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of

the device such that T

Note 4: All limits are guaranteed by design or statistical analysis.

Note 5: Typical values represent the most likely parametric norm at the time of characterization.

Note 6: The maximum power dissipation is a function of T

(T

J(MAX)-TA

Output Impedance f=1kHz

<

<

V

5V 56 dB

DD

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J=TA

, θJAand TA. The maximum allowable power dissipation at any ambient temperature is PD=

)/θJA. All numbers apply for packages soldered directly onto a PC board.

J(MAX)

Typ

(Note 5)

Max

(Note 4) Units

100

62 dB

0.18 %

20.1 20.90

21.00

72 Hz

52 kHz

>

100 MΩ

1090 1310

1325

<

200 Ω

µA

dB

PP

mV

>

TA.

J

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Connection Diagram

LMV1031-20

4-Bump Ultra Thin micro SMD

Top View

Note: - Pin numbers are referenced to package marking text orientation.

- The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably.
Package marking does not correlate to device type in any way.

20150803

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

4-Bump Ultra Thin

micro SMD lead free

LMV1031UR-20

LMV1031URX-20 3k Units Tape and Reel

Date Code

250 Units Tape and Reel

URA04JJA

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