National Semiconductor LMH6704 Technical data

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LMH6704 650 MHz Progammable Gain Buffer with Disable

February 2005

General Description

The LMH™6704 is a very wideband, DC coupled progammable gain buffer designed specifically for wide dynamic range systems requiring exceptional signal fidelity. The LMH6704 includes on chip feedback and gain set resistors, simplifying PCB layout while providing user programmable gains of +1, +2 and −1 V/V. The LMH6704 provides a disable pin, which places the amplifier in a high output impedance, low power mode. The Disable pin may be allowed to float high.

With a 650 MHz Small Signal Bandwidth (A power gain flatness to 200 MHz, and excellent Differential Gain and Phase, the LMH6704 is optimized for video applications. High resolution video systems will benefit from the LMH6704’s ability to drive multiple video loads at low levels of differential gain or differential phase distortion.

The LMH6704 is constructed with National’s proprietary high speed complementary bipolar process using National’s proven current feedback circuit architectures. It is available in 8-Pin SOIC and 6-Pin SOT23 packages.

= +1), full

V

Connection Diagram

8-Pin SOIC 6-Pin SOT23

Features

n Wideband operation

= +1, VO= 0.5 V

—A

V

= +2, VO= 0.5 V

—A

V

= +2, VO=2V

—A

V

n High output current n Very low distortion

nd/3rd

—2 — Differential gain/Differential phase: 0.02%/0.02˚

n Low noise 2.3nV/ n High slew rate 3000 V/µs n Supply current 11.5 mA

harmonics (10 MHz, RL= 100Ω): −62/−78

PP

650 MHz 450 MHz 400 MHz

±

90 mA

Applications

n HDTV, NTSC & PAL video systems n Video switching and distribution n ADC driver n DAC buffer n RGB driver n High speed multiplexer

Top View

20103634

Top View

20103613

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Pin SOIC

6-Pin SOT23

LMH™is a trademark of National Semiconductor Corporation.

LMH6704MA

LMH6704MAX 2.5k Units Tape and Reel

LMH6704MF

LMH6704MFX 3k Units Tape and Reel

LMH6704MA

B07A

95 Units Rail

1k Units Tape and Reel

M08A

MF06A

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

LMH6704

Distributors for availability and specifications.

Supply Voltage 13.5V

I

OUT

Common-Mode Input Voltage V

Maximum Junction Temperature 150˚C

Storage Temperature Range −65˚C to 150˚C

Soldering Information

Infrared or Convection (20 sec.) 235˚C

Wave Soldering (10 sec.) 260˚C

(Note 3)

−

to V

S

+

S

ESD Tolerance (Note 4)

Human Body Model 2000V

Machine Model 200V

Operating Ratings (Note 1)

Nominal Supply Voltage

Operating Temperature −40˚C to 85˚C

Thermal Resistance

Package (θ

)(θJA)

JC

8-Pin SOIC 75˚C/W 160˚C/W

6-Pin SOT23 120˚C/W 187˚C/W

±

Lead Temp. (soldering 10 sec.) 300˚C

Electrical Characteristics (Note 2)

TA= +25˚C , AV= +2, VS=±5V, RL= 100Ω; unless specified.

Symbol Parameter Conditions Min

(Note 6)

Dynamic Performance

SSBW -3 dB Bandwidth V

LSBW V

GF

0.1dB

0.1 dB Gain Bandwidth V

SR Slew Rate V

TRS/TRL Rise and Fall Time

= 0.5 VPP,AV= +1 650

OUT

= 0.5 V

OUT

PP

=2V

PP

=2V

PP

=4VPP, 40% to 60% (Note 5) 3000 V/µs

2V Step 0.9 ns

(10% to 90%)

t

s

Settling Time to 0.1% 2V Step 10 ns

Distortion and Noise Response

HD2L 2

HD2H V

HD3L 3

HD3H V

IMD Two-Tone Intermodulation f = 10 MHz, P

V

N

nd

Harmonic Distortion V

rd

Harmonic Distortion V

= 2.0 VPP,f=10MHz −62

OUT

= 2.0 VPP,f=40MHz −52

OUT

= 2.0 VPP,f=10MHz −78

OUT

= 2.0 VPP,f=40MHz −65

OUT

= 10 dBm/tone −65 dBc

OUT

Output Noise Voltage f = 100 kHz AV= +2 10.5 nV/

AV= +1 9.3

A

= −1 10.5

V

I

NN

Non-Inverting Input Noise Current

DG Differential Gain RL= 150Ω, f = 4.43 MHz .02 %

DP Differential Phase R

= 150Ω, f = 4.43 MHz 0.02 deg

L

Static, DC Performance

A

V

Gain 1.98

1.96

Gain Error −1

−2

V

DV

IO

Input Offset Voltage 2

Input Offset Voltage Average Drift

I

BN

I

BI

Input Bias Current Non-Inverting (Note 7) −5

Input Bias Current Inverting 5

Typ

(Note 6)

Max

(Note 6)

450

400

200 MHz

3 pA/

2.00 2.02

2.04

+1

+2

±

7

±

8.3

35 µV/˚C

±

15

±

18

±

22

±

31

4V to±6V

Units

MHzSSBW V

dBc

V/V

%

mV

µA

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Electrical Characteristics (Note 2) (Continued)

TA= +25˚C , AV= +2, VS=±5V, RL= 100Ω; unless specified.

Symbol Parameter Conditions Min

(Note 6)

CMIR Common Mode Input Range V

≤ 15 mV

IO

±

1.9

PSRR Power Supply Rejection Ratio DC 48

47

V

O

I

O

I

S

R

F&RG

R

OUT

R

IN+

C

IN+

R

L

OUT

∞

= 100Ω

≤ 80 mV

∞

Output Voltage Swing RL=

Linear Output Current V

Supply Current (Enabled) DIS = 2V, RL=

Supply Current (Disabled) DIS = 0.8V, RL=

Internal RFand R

G

Closed Loop Output Resistance DC 0.05 Ω

Input Resistance 1MΩ

Input Capacitance 1pF

±

3.3

±

3.18

±

3.2

±

3.12

±

55

375 465 563 Ω

Enable/Disable Performance (Disabled Low)

T

ON

T

OFF

Enable Time 10 ns

Disable Time 10 ns

Output Glitch 50 mV

V

IH

V

IL

I

IH

I

IL

I

OZ

Enable Voltage DIS ≥ V

Disable Voltage DIS ≤ V

IH

IL

2.0 V

Disable Input Bias Current, High DIS = V+, (Note 7) −1

Disable Input Bias Current, Low DIS = 0V (Note 7) 0 −100 −350 µA

Disabled Output Leakage

AV= +1, V

=±1.8V 0.2

OUT

Current

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.

Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T Min/Max ratings are based on production testing unless otherwise specified.

Note 3: The maximum output current (I

Note 4: Human body model: 1.5 kΩ in series with 100 pF. Machine model: 0Ω in series with 200 pF.

Note 5: Slew Rate is the average of the rising and falling edges.

Note 6: Typical numbers are the most likely parametric norm. Bold numbers refer to over temperature limits.

Note 7: Negative current implies current flowing out of the device.

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J=TA

) is determined by device power dissipation limitations.

OUT

Typ

(Note 6)

±

2V

Max

(Note 6)

Units

52 dB

±

3.5

±

3.5

±

90 mA

11.5 12.5

13.7

0.25 0.9

0.925

0.8

±

50 µA

±

25

±

50

J

V

mA

µA

>

LMH6704

PP

TA.

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Typical Performance Characteristics (T

Unless Specified).

LMH6704

Small Signal Frequency Response vs. Gain Frequency Response vs. V

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Small Signal Frequency Response vs. R

LOAD

= 25˚C, VS=±5V, RL= 100Ω,AV= +2, V

A

Large Signal Gain Flatness

OUT

= 0.5 VPP;

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Small Signal Frequency Response vs. Capacitive Load Series Output Isolation Resistance vs. Capacitive Load

20103618 20103619

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