National Semiconductor LMH6682, LMH6683 Technical data

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LMH6682/6683
190MHz Single Supply, Dual and Triple Operational
Amplifiers

General Description

The LMH6682 and LMH6683 are high speed operational
amplifiers designed for use in modern video systems. These
single supply monolithic amplifiers extend National’s feature­rich, high value video portfolio to include a dual and a triple
version. The important video specifications of differential

±

gain (
combined with an output drive current in each amplifier of
85mA make the LMH6682 and LMH6683 excellent choices
for a full range of video applications.

Voltage feedback topology in operational amplifiers assures
maximum flexibility and ease of use in high speed amplifier
designs. The LMH6682/83 is fabricated in National Semicon­ductor’s VIP10 process. This advanced process provides a
superior ratio of speed to quiescient current consumption
and assures the user of high-value amplifier designs. Ad­vanced technology and circuit design enables in these am­plifiers a −3db bandwidth of 190MHz, a slew rate of 940V/
µsec, and stability for gains of less than −1 and greater than
+2.

The input stage design of the LM6682/83 enables an input
signal range that extends below the negative rail. The output
stage voltage range reaches to within 0.8V of either rail
when driving a 2kΩ load. Other attractive features include
fast settling and low distortion. Other applications for these
amplifiers include servo control designs. These applications
are sensitive to amplifiers that exhibit phase reversal when
the inputs exceed the rated voltage range. The LMH6682/83
amplifiers are designed to be immune to phase reversal
when the specified input range is exceeded. See applica­tions section. This feature makes for design simplicity and
flexibility in many industrial applications.

0.01% typ.) and differential phase (±0.08 degrees)

The LMH6682 dual operational amplifier is offered in minia­ture surface mount packages, SOIC-8, and MSOP-8. The
LMH6683 triple amplifier is offered in SOIC-14 and TSSOP-

14.

Features

VS=±5V, TA= 25˚C, RL= 100Ω, A = +2 (Typical values
unless specified)

n DG error 0.01%
n DP error 0.08˚
n −3dB BW (A = +2) 190MHz
n Slew rate (V
n Supply current 6.5mA/amp
n Output current +80/−90mA
n Input common mode voltage 0.5V beyond V

+

V

n Output voltage swing (RL=2kΩ) 0.8V from rails
n Input voltage noise (100KHz) 12nV/

=±5V) 940V/µs

S

Applications

n CD/DVD ROM
n ADC buffer amp
n Portable video
n Current sense buffer
n Portable communications

November 2002

−

, 1.7V from

LMH6682/6683 190MHz Single Supply, Dual and Triple Operational Amplifiers

Connection Diagrams

SOIC-8/MSOP-8 (LMH6682) SOIC-14/TSSOP-14 (LMH6683)

Top View

20059002

© 2002 National Semiconductor Corporation DS200590 www.national.com

Top View

20059003

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

Storage Temperature Range −65˚C to +150˚C

Junction Temperature (Note 7) +150˚C

please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

LMH6682/6683

ESD Tolerance

Human Body Model 2KV(Note 2)

Machine Model 200V (Note 3)

Differential

V

IN

Output Short Circuit Duration (Note 4), (Note 6)

Input Current

Supply Voltage (V

Voltage at Input/Output pins V

+-V−

) 12.6V

+

+0.8V, V−−0.8V

Soldering Information

±

±

10mA

2.5V

Operating Ratings (Note 1)

Supply Voltage (V

Operating Temperature Range
(Note 7) −40˚C to +85˚C

Package Thermal Resistance (Note 7)

SOIC-8 190˚C/W

MSOP-8 235˚C/W

SOIC-14 145˚C/W

TSSOP-14 155˚C/W

+–V−

) 3Vto12V

Infrared or Convection (20 sec.) 235˚C

Wave Soldering (10 sec.) 260˚C

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VO=VCM=V+/2, and RL= 100Ω to V+/2,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

(Note 9)

SSBW −3dB BW A = +2, V

A = −1, V

GFP Gain Flatness Peaking A = +2, V

OUT

OUT

OUT

= 200mV

= 200mV

= 200mV

PP

PP

PP

DC to 100MHz

GFR Gain Flatness Rolloff A = +2, V

OUT

= 200mV

PP

DC to 100MHz

LPD 1˚ 1˚ Linear Phase Deviation A = +2, V

GF

0.1dB

0.1dB Gain Flatness A = +2,±0.1dB, V

FPBW Full Power −1dB Bandwidth A = +2, V

DG Differential Gain

NTSC 3.58MHz

DP Differential Phase

NTSC 3.58MHz

A = +2, R
Pos video only V

A = +2, R
Pos video only V

= 200mVPP,±1˚ 40 MHz

OUT

= 200mV

OUT

=2V

OUT

L

L

PP

= 150Ω to V+/2

=2V

CM

= 150Ω to V+/2

=2V

CM

PP

Time Domain Response

T

r/Tf

OS Overshoot A = +2, V

T

s

SR Slew Rate (Note 11) A = +2, V

Rise and Fall Time 20-80%, VO=1VPP,AV= +2 2.1

20-80%, V

=1VPP,AV=−1 2

O

= 100mV

O

PP

Settling Time VO=2VPP,±0.1%, AV=+2 49 ns

=3V

A = −1, V

OUT

OUT

=3V

PP

PP

Distortion and Noise Response

HD2 2

nd

Harmonic Distortion f = 5MHz, VO=2VPP, A = +2, RL=

2kΩ

f = 5MHz, V

=2VPP, A = +2, RL=

O

100Ω

HD3 3rdHarmonic Distortion f = 5MHz, VO=2VPP, A = +2, RL=

2kΩ

f = 5MHz, VO=2VPP, A = +2, RL=
100Ω

140 180

Typ

(Note 8)

Max

(Note 9)

180

2.1 dB

0.1 dB

25 MHz

110 MHz

0.03 %

0.05 deg

22 %

520

500

−60

−61

−77

−54

Units

MHz

ns

V/µs

dBc

dBc

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5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VO=VCM=V+/2, and RL= 100Ω to V+/2,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

(Note 9)

Distortion and Noise Response

THD Total Harmonic Distortion f = 5MHz, V

=2VPP, A = +2, RL=

O

2kΩ

f = 5MHz, VO=2VPP, A = +2, RL=
100Ω

e

n

Input Referred Voltage Noise f = 1kHz 17 nV/

f = 100kHz 12

i

n

Input Referred Current Noise f = 1kHz 8 pA/

f = 100kHz 3

CT Cross-Talk Rejection

(Amplifier)

f = 5MHz, A = +2, SND: R

F=RG

= 510Ω

RCV: R

= 100Ω

L

Static, DC Performance

A

VOL

CMVR Input Common-Mode Voltage

Large Signal Voltage Gain VO= 1.25V to 3.75V,

=2kΩ to V+/2

R

L

V

= 1.5V to 3.5V,

O

= 150Ω to V+/2

R

L

V

=2Vto3V,

O

=50Ω to V+/2

R

L

CMRR ≥ 50dB −0.2

Range

V

OS

TC V

Input Offset Voltage

Input Offset Voltage Average

OS

(Note 12)

Drift

I

B

TC

IB

I

OS

CMRR Common Mode Rejection

Input Bias Current (Note 10) −5 −20

Input Bias Current Drift 0.01 nA/˚C

Input Offset Current 50 300

Stepped from 0V to 3.0V 72 82 dB

V

CM

Ratio

+

+PSRR Positive Power Supply

= 4.5V to 5.5V, VCM=1V 70 76 dB

V

Rejection Ratio

I

S

Supply Current (per channel) No load 6.5 9

85 95

75 85

70 80

−0.1

3.0

2.8

Typ

(Note 8)

Max

(Note 9)

−60

−53

−77 dB

−0.5

3.3

±

1.1

±

2 µV/˚C

±

5

±

7

−30

500

11

Units

dBc

LMH6682/6683

dB

V

mV

µA

nA

mA

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5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VO=VCM=V+/2, and RL= 100Ω to V+/2,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

LMH6682/6683

Miscellaneous Performance

V

I

I

R

C

R

O

OUT

SC

IN

IN

OUT

Output Swing

RL=2kΩ to V+/2 4.10

High

RL= 150Ω to V+/2 3.90

=75Ω to V+/2 3.75

R

L

Output Swing

RL=2kΩ to V+/2 800 920

Low

= 150Ω to V+/2 870 970

R

L

RL=75Ω to V+/2 885 1100

Output Current VO= 1V from either supply rail

Output Short Circuit Current

Sourcing to V+/2 −100

(Note 5), (Note 6), (Note 10)

+

Sinking from V

/2 100

Common Mode Input
Resistance

Common Mode Input
Capacitance

Output Resistance Closed
Loop

f = 1kHz, A = +2, RL=50Ω 0.02

f = 1MHz, A = +2, R

=50Ω 0.12

L

(Note 9)

3.8

3.70

3.50

±

40 +80/−75 mA

−80

80

Typ

(Note 8)

4.25

4.19

4.15

−155

220

3

1.6

Max

(Note 9)

1100

1200

1250

Units

V

mV

mA

MΩ

pF

Ω

±

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VO=VCM= 0V, and RL= 100Ω to 0V,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

(Note 9)

SSBW −3dB BW A = +2, V

A = −1, V

GFP Gain Flatness Peaking A = +2, V

OUT

OUT

OUT

= 200mV

= 200mV

= 200mV

PP

PP

PP

150 190

Typ

(Note 8)

Max

(Note 9)

190

1.7 dB

DC to 100MHz

GFR Gain Flatness Rolloff A = +2, V

OUT

= 200mV

PP

0.1 dB

DC to 100MHz

LPD 1˚ 1˚ Linear Phase Deviation A = +2, V

GF

0.1dB

0.1dB Gain Flatness A = +2,±0.1dB, V

FPBW Full Power −1dB Bandwidth A = +2, V

DG Differential Gain

A = +2, R

= 200mVPP,±1˚ 40 MHz

OUT

= 200mV

OUT

=2V

OUT

L

PP

= 150Ω to 0V 0.01 %

PP

25 MHz

120 MHz

NTSC 3.58MHz

DP Differential Phase

A = +2, RL= 150Ω to 0V 0.08 deg

NTSC 3.58MHz

Time Domain Response

T

r/Tf

OS Overshoot A = +2, V

T

s

Rise and Fall Time 20-80%, VO=1VPP,A=+2 1.9

20-80%, V

=1VPP,A=−1 2

O

= 100mV

O

PP

19 %

Settling Time VO=2VPP,±0.1%, A = +2 42 ns

Units

MHz

ns

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±

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VO=VCM= 0V, and RL= 100Ω to 0V,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

(Note 9)

Typ

(Note 8)

Max

(Note 9)

Time Domain Response

SR Slew Rate (Note 11) A = +2, V

A = −1, V

OUT

OUT

=6V

=6V

PP

PP

940

900

Distortion and Noise Response

HD2 2

nd

Harmonic Distortion f = 5MHz, VO=2VPP, A = +2, RL=

−63

2kΩ

f = 5MHz, V

=2VPP, A = +2, RL=

O

−66

100Ω

HD3 3rdHarmonic Distortion f = 5MHz, VO=2VPP, A = +2, RL=

−82

2kΩ

f = 5MHz, VO=2VPP, A = +2, RL=

−54

100Ω

THD Total Harmonic Distortion f = 5MHz, V

=2VPP, A = +2, RL=

O

−63

2kΩ

f = 5MHz, V

=2VPP, A = +2, RL=

O

−54

100Ω

e

n

Input Referred Voltage Noise f = 1kHz 18 nV/

f = 100kHz 12

i

n

Input Referred Current Noise f = 1kHz 6 pA/

f = 100kHz 3

CT Cross-Talk Rejection

(Amplifier)

f = 5MHz, A = +2, SND: R

F=RG

= 510Ω

RCV: R

= 100Ω

L

−78 dB

Static, DC Performance

A

VOL

Large Signal Voltage Gain VO= −3.75V to 3.75V,

CMVR Input Common Mode Voltage

Range

=2kΩ to V+/2

R

L

V

= −3.5V to 3.5V,

O

= 150Ω to V+/2

R

L

V

= −3V to 3V,

O

=50Ω to V+/2

R

L

CMRR ≥ 50dB −5.2

87 100

80 90

75 85

−5.1

3.0

−5.5

3.3

2.8

V

OS

TC V

Input Offset Voltage

Input Offset Voltage Average

OS

(Note 12)

±

1

±

2 µV/˚C

±

5

±

7

Drift

I

B

Input Bias Current (Note 10) −5 −20

−30

TC

I

OS

IB

Input Bias Current Drift 0.01 nA/˚C

Input Offset Current 50 300

500

CMRR Common Mode Rejection

Stepped from −5V to 3.0V 75 84 dB

V

CM

Ratio

+PSRR Positive Power Supply

Rejection Ratio

−PSRR Negative Power Supply
Rejection Ratio

V+= 8.5V to 9.5V,

−

= −1V

V

−

V

= −4.5V to −5.5V,

+

=5V

V

75 82 dB

78 85 dB

LMH6682/6683

Units

V/µs

dBc

dBc

dBc

dB

V

mV

µA

nA

www.national.com5

±

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VO=VCM= 0V, and RL= 100Ω to 0V,

= 510Ω. Boldface limits apply at the temperature extremes.

R

F

Symbol Parameter Conditions Min

LMH6682/6683

(Note 9)

Typ

(Note 8)

Max

(Note 9)

Static, DC Performance

I

S

Supply Current (per channel) No load 6.5 9.5

11

Miscellaneous Performance

V

O

Output Swing
High

RL=2kΩ to 0V 4.10

3.80

= 150Ω to 0V 3.90

R

L

4.25

4.20

3.70

RL=75Ω to 0V 3.75

4.18

3.50

Output Swing
Low

=2kΩ to 0V −4.19 −4.07

R

L

= 150Ω to 0V −4.05 −3.89

R

L

−3.80

−3.65

RL=75Ω to 0V −4.00 −3.70

−3.50

I

I

OUT

SC

Output Current VO= 1V from either supply rail

Output Short Circuit Current

Sourcing to 0V −120

(Note 5) , (Note 6),(Note 10)

Sinking from 0V 120

±

45 +85/−80 mA

−180

−100

230

100

R

IN

Common Mode Input

4

Resistance

C

IN

Common Mode Input

1.6

Capacitance

R

OUT

Note 1: Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model, 1.5kΩ in series with 100pF.

Note 3: Machine Model, 0Ω in series with 200pF.

Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C.

Note 5: Short circuit test is a momentary test. See next note.

Note 6: Output short circuit duration is infinite for V

Note 7: The maximum power dissipation is a function of T

P

D

Note 8: Typical values represent the most likely parametric norm.

Note 9: All limits are guaranteed by testing or statistical analysis.

Note 10: Positive current corresponds to current flowing into the device.

Note 11: Slew rate is the average of the rising and falling slew rates

Note 12: Offset Voltage average drift determined by dividing the change in V

Output Resistance Closed
Loop

=(T

J(MAX)-TA

)/ θJA. All numbers apply for packages soldered directly onto a PC board.

f = 1kHz, A = +2, RL=50Ω 0.02

f = 1MHz, A = +2, R

<

6V at room temperature and below. For V

S

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is

J(MAX)

=50Ω 0.12

L

>

6V, allowable short circuit duration is 1.5ms.

S

at temperature extremes into the total temperature change.

OS

Units

mA

V

mV

mA

MΩ

pF

Ω

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