National Semiconductor LMH6643EP, LMH6644EP Technical data

查询LMH6642EP供应商

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers

General Description

The LMH664XEP family true single supply voltage feedback amplifiers offer high speed (130MHz), low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar performance.

Input common mode voltage range extends to 0.5V below V and 1V from V+. Output voltage range extends to within 40mV of either supply rail, allowing wide dynamic range especially desirable in low voltage applications. The output stage is capable of approximately 75mA in order to drive heavy loads. Fast output Slew Rate (130V/µs) ensures large peak-to-peak output swings can be maintained even at higher speeds, resulting in exceptional full power bandwidth of 40MHz with a 3V supply. These characteristics, along with low cost, are ideal features for a multitude of industrial and commercial applications.

Careful attention has been paid to ensure device stability under all operating voltages and modes. The result is a very well behaved frequency response characteristic (0.1dB gain flatness up the 12MHz under 150Ω load and A minimal peaking (typically 2dB maximum) for any gain setting and under both heavy and light loads. This along with fast settling time (68ns) and low distortion allows the device to operate well in ADC buffer, and high frequency filter applications as well as other applications.

This device family offers professional quality video performance with low DG (0.01%) and DP (0.01˚) characteristics. Differential Gain and Differential Phase characteristics are also well maintained under heavy loads (150Ω) and throughout the output voltage range. The LMH664XEP family is offered in single (LMH6642EP), dual (LMH6643EP), and quad (LMH6644EP) options. See ordering information for packages offered.

= +2) with

V

ENHANCED PLASTIC

Extended Temperature Performance of −40˚C to +85˚C

•

Baseline Control - Single Fab & Assembly Site

•

Process Change Notification (PCN)

•

Qualification & Reliability Data

•

Solder (PbSn) Lead Finish is standard

•

Enhanced Diminishing Manufacturing Sources (DMS)

•

−

Support

Features

(VS=±5V, TA= 25˚C, RL=2kΩ,AV= +1. Typical values unless specified).

n −3dB BW (A n Supply voltage range 2.7V to 12.8V n Slew rate (Note 11), (A n Supply current (no load) 2.7mA/amp n Output short circuit current +115mA/−145mA n Linear output current n Input common mode volt. 0.5V beyond V n Output voltage swing 40mV from rails n Input voltage noise (100kHz) 17nV/ n Input current noise (100kHz) 0.9pA/ n THD (5MHz, RL=2kΩ,VO=2VPP,AV= +2) −62dBc n Settling time 68ns n Fully characterized for 3V, 5V, and n Overdrive recovery 100ns n Output short circuit protected (Note 14) n No output phase reversal with CMVR exceeded

= +1) 130MHz

V

= −1) 130V/µs

V

±

5V

Applications

n Selected Military Applications n Selected Avionics Applications

July 2004

±

75mA

−

, 1V from V

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic Low Power, 130MHz, 75mA Rail-to-Rail

Output Amplifiers

+

Ordering Information

PART NUMBER VID PART NUMBER NS PACKAGE NUMBER (Note 3)

LMH6642MFXEP V62/04625-01 MF05A

LMH6643MAXEP V62/04625-02 M08A

LMH6644MAXEP V62/04625-03 M14A

(Notes 1, 2) TBD TBD

Note 1: For the following (Enhanced Plastic) versions, check for availability: LMH6642MAEP, LMH6642MAXEP, LMH6642MFEP, LMH6643MAEP, LMH6643MMEP, LMH6643MMXEP, LMH6644MAEP, LMH6644MTEP, LMH6644MTXEP. Parts listed with an "X" are provided in Tape & Reel and parts without an "X" are in Rails.

Note 2: FOR ADDITIONAL ORDERING AND PRODUCT INFORMATION, PLEASE VISIT THE ENHANCED PLASTIC WEB SITE AT: www.national.com/ mil

Note 3: Refer to package details under Physical Dimensions

Absolute Maximum Ratings (Note 4)

If Military/Aerospace specified devices are required,

Infrared or Convection Reflow(20 sec) 235˚C

Wave Soldering Lead Temp.(10 sec) 260˚C

please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Operating Ratings (Note 4)

ESD Tolerance 2KV (Note 5)

200V (Note 12)

Differential

V

IN

±

2.5V

Output Short Circuit Duration (Note 6), (Note 14)

Supply Voltage (V

Voltage at Input/Output pins V

Input Current

+-V−

) 13.5V

+

+0.8V, V−−0.8V

±

10mA

Storage Temperature Range −65˚C to +150˚C

Junction Temperature (Note 7) +150˚C

Soldering Information

Supply Voltage (V

Junction Temperature Range (Note 7) −40˚C to +85˚C

Package Thermal Resistance (Note 7) (θ

SOT23-5 265˚C/W

SOIC-8 190˚C/W

MSOP-8 235˚C/W

SOIC-14 145˚C/W

TSSOP-14 155˚C/W

+–V−

) 2.7V to 12.8V

)

JA

3V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 3V, V−= 0V, VCM=VO=V+/2, and RL=2kΩ to V+/2.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

BW −3dB BW A

BW

0.1dB

0.1dB Gain Flatness AV= +2, RL= 150Ω to V+/2,

PBW Full Power Bandwidth A

e

n

Input-Referred Voltage Noise f = 100kHz 17

= +1, V

V

A

= +2, −1, V

V

= 402Ω,V

R

L

= +1, −1dB, V

V

OUT

= 200mV

OUT

= 200mV

OUT

PP

= 200mV

=1V

PP

f = 1kHz 48

i

n

Input-Referred Current Noise f = 100kHz 0.90

f = 1kHz 3.3

THD Total Harmonic Distortion f = 5MHz, V

= 100Ω to V+/2

R

L

DG Differential Gain V

DP Differential Phase V

= 1V, NTSC, AV=+2

CM

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.03

L

= 1V, NTSC, AV=+2

CM

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.03

L

=2VPP,AV= −1,

O

CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:

= 510Ω,AV=+2

f=Rg

=5V

S

= −1, VI=2V

V

PP

T

S

Settling Time VO=2VPP,±0.1%, 8pF Load,

SR Slew Rate (Note 11) A

V

OS

TC V

I

B

I

OS

R

IN

Input Offset Voltage

Input Offset Average Drift (Note 15)

OS

Input Bias Current (Note 10) −1.50 −2.60

Input Offset Current 20 800

Common Mode Input

R

V

Resistance

C

IN

Common Mode Input Capacitance

(Note 9)

80 115

90 120 V/µs

Typ

(Note 8)

Max

(Note 9)

46

19 MHz

40 MHz

−48

0.17

0.05

47 dB

68 ns

±

1

±

5 µV/˚C

±

5

±

7

−3.25

1000

3MΩ

2pF

Units

MHz

nV/

pA/

dBc

%

deg

mV

µA

nA

www.national.com 2

3V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 3V, V−= 0V, VCM=VO=V+/2, and RL=2kΩ to V+/2.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 9)

CMVR Input Common-Mode Voltage

CMRR ≥ 50dB −0.5 −0.2

Range

CMRR Common Mode Rejection

Stepped from 0V to 1.5V 72 95 dB

V

CM

Ratio

A

VOL

V

O

I

SC

I

OUT

+PSRR Positive Power Supply

Large Signal Voltage Gain VO= 0.5V to 2.5V

=2kΩ to V+/2

R

L

V

= 0.5V to 2.5V

O

= 150Ω to V+/2

R

L

Output Swing High

Output Swing Low

RL=2kΩ to V+/2, VID= 200mV 2.90 2.98

R

= 150Ω to V+/2, VID= 200mV 2.80 2.93

L

R

=2kΩ to V+/2, VID= −200mV 25 75

L

R

= 150Ω to V+/2, VID= −200mV 75 150

L

Output Short Circuit Current Sourcing to V+/2

= 200mV (Note 13)

V

Output Current V

ID

Sinking to V

= −200mV (Note 13)

V

ID

OUT +

V

= 3.0V to 3.5V, VCM= 1.5V 75 85 dB

+

/2

= 0.5V from either supply

Rejection Ratio

I

S

Supply Current (per channel) No Load 2.70 4.00

1.8

1.6

80

75

74

70

50

35

55

40

Typ

(Note 8)

Max

(Note 9)

−0.1

2.0

96

82

95

110

±

65 mA

4.50

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

Units

V

dB

V

mV

mA

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VCM=VO=V+/2, and RL=2kΩ to V+/2.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 9)

BW −3dB BW A

BW

0.1dB

0.1dB Gain Flatness AV= +2, RL= 150Ω to V+/2,

PBW Full Power Bandwidth A

e

n

Input-Referred Voltage Noise f = 100kHz 17

= +1, V

V

A

= +2, −1, V

V

= 402Ω,V

R

f

= +1, −1dB, V

V

OUT

= 200mV

OUT

= 200mV

OUT

PP

=2V

90 120

PP

f = 1kHz 48

i

n

Input-Referred Current Noise f = 100kHz 0.90

f = 1kHz 3.3

THD Total Harmonic Distortion f = 5MHz, V

DG Differential Gain NTSC, A

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.05

L

DP Differential Phase NTSC, A

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.01

L

=2VPP,AV= +2 −60 dBc

O

=+2

V

=+2

V

CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:

R

T

S

Settling Time VO=2VPP,±0.1%, 8pF Load 68 ns

= 510Ω,AV=+2

f=Rg

Typ

(Note 8)

Max

(Note 9)

46

15 MHz

22 MHz

0.16

0.05

47 dB

nV/

pA/

Units

MHz

%

deg

www.national.com3

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= 0V, VCM=VO=V+/2, and RL=2kΩ to V+/2.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

SR Slew Rate (Note 11) A

V

OS

TC V

I

B

I

OS

R

IN

Input Offset Voltage

Input Offset Average Drift (Note 15)

OS

Input Bias Current (Note 10)

Input Offset Current

Common Mode Input

= −1, VI=2V

V

PP

Resistance

C

IN

Common Mode Input Capacitance

CMVR Input Common-Mode Voltage

CMRR ≥ 50dB

Range

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

CMRR Common Mode Rejection

Ratio

A

VOL

V

O

Large Signal Voltage Gain VO= 0.5V to 4.50V

Output Swing High

Output Swing Low

I

SC

OUT

Output Short Circuit Current Sourcing to V+/2

Output Current VO= 0.5V from either supply

+PSRR Positive Power Supply

Rejection Ratio

I

S

Supply Current (per channel) No Load

Stepped from 0V to 3.5V

V

CM

=2kΩ to V+/2

R

L

V

= 0.5V to 4.25V

O

= 150Ω to V+/2

R

L

RL=2kΩ to V+/2, VID= 200mV 4.90 4.98

R

= 150Ω to V+/2, VID= 200mV 4.65 4.90

L

R

=2kΩ to V+/2, VID= −200mV 25 100

L

R

= 150Ω to V+/2, VID= −200mV 100 150

L

= 200mV (Note 13)

V

ID

Sinking to V

= −200mV (Note 13)

V

ID

+

V

= 4.0V to 6V

+

/2

(Note 9)

95 125 V/µs

3.8

3.6

72 95

86

82

76

72

55

40

70

55

79 90

Typ

(Note 8)

±

1

±

5 µV/˚C

−1.70

20

Max

(Note 9)

±

5

±

7

−2.60

−3.25

800

1000

3

2

−0.5

−0.2

−0.1

4.0

98

82

115

140

±

70 mA

2.70

4.25

5.00

Units

mV

µA

nA

MΩ

pF

V

dB

V

mV

mA

dB

mA

±

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VCM=VO= 0V and RL=2kΩ to ground.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 9)

BW −3dB BW A

BW

0.1dB

0.1dB Gain Flatness AV= +2, RL= 150Ω to V+/2,

PBW Full Power Bandwidth A

e

n

Input-Referred Voltage Noise f = 100kHz 17

= +1, V

V

A

= +2, −1, V

V

= 806Ω,V

R

f

= +1, −1dB, V

V

OUT

= 200mV

OUT

= 200mV

OUT

PP

=2V

95 130

PP

Typ

(Note 8)

Max

(Note 9)

46

12 MHz

24 MHz

f = 1kHz 48

www.national.com 4

Units

MHz

nV/

±

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for at TJ= 25˚C, V+= 5V, V−= −5V, VCM=VO= 0V and RL=2kΩ to ground.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 9)

i

n

Input-Referred Current Noise f = 100kHz 0.90

f = 1kHz 3.3

THD Total Harmonic Distortion f = 5MHz, V

DG Differential Gain NTSC, A

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.01

L

DP Differential Phase NTSC, A

=150Ω to V+/2

R

L

R

=1kΩ to V+/2 0.01

L

=2VPP,AV= +2 −62 dBc

O

=+2

V

=+2

V

CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:

Rf=Rg= 510Ω,AV=+2

T

S

SR Slew Rate (Note 11) A

V

OS

TC V

I

B

I

OS

R

IN

Settling Time VO=2VPP,±0.1%, 8pF Load,

=5V

V

S

= −1, VI=2V

V

Input Offset Voltage

Input Offset Average Drift (Note 15)

OS

Input Bias Current (Note 10)

Input Offset Current

Common Mode Input

PP

100 135 V/µs

Resistance

C

IN

Common Mode Input Capacitance

CMVR Input Common-Mode Voltage

CMRR ≥ 50dB

Range

3.8

3.6

CMRR Common Mode Rejection

Ratio

A

VOL

V

O

Large Signal Voltage Gain VO= −4.5V to 4.5V,

Output Swing High

Output Swing Low

I

SC

OUT

Output Short Circuit Current Sourcing to Ground

Output Current VO= 0.5V from either supply

PSRR Power Supply Rejection Ratio (V

I

S

Supply Current (per channel) No Load

Stepped from −5V to 3.5V

V

CM

74 95

88

=2kΩ

R

L

V

= −4.0V to 4.0V,

O

= 150Ω

R

L

84

78

74

RL=2kΩ,VID= 200mV 4.90 4.96

R

= 150Ω,VID= 200mV 4.65 4.80

L

R

=2kΩ,VID= −200mV −4.96 −4.90

L

R

= 150Ω,VID= −200mV −4.80 −4.65

L

60

= 200mV (Note 13)

V

ID

Sinking to Ground

= −200mV (Note 13)

V

ID

+,V−

) = (4.5V, −4.5V) to (5.5V,

−5.5V)

35

85

65

±

75 mA

78 90

Typ

(Note 8)

Max

(Note 9)

0.15

0.04

47 dB

68

±

1

±

5 µV/˚C

−1.60

20

5

±

7

−2.60

−3.25

800

1000

3

2

−5.5

−5.2

−5.1

4.0

96

82

115

145

2.70

4.50

5.50

Units

pA/

deg

MΩ

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

%

ns

mV

µA

nA

pF

V

dB

V

mA

dB

mA

www.national.com5

±

5V Electrical Characteristics (Continued)

Note 4: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 5: Human body model, 1.5kΩ in series with 100pF.

Note 6: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C.

Note 7: The maximum power dissipation is a function of T P

=(T

D

J(MAX)-TA

Note 8: Typical values represent the most likely parametric norm.

Note 9: All limits are guaranteed by testing or statistical analysis.

Note 10: Positive current corresponds to current flowing into the device.

Note 11: Slew rate is the average of the rising and falling slew rates.

Note 12: Machine Model, 0Ω in series with 200pF.

Note 13: Short circuit test is a momentary test. See Note 14.

Note 14: Output short circuit duration is infinite for V

Note 15: Offset voltage average drift determined by dividing the change in V

)/ θJA. All numbers apply for packages soldered directly onto a PC board.

<

6V at room temperature and below. For V

S

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is

J(MAX)

>

6V, allowable short circuit duration is 1.5ms.

at temperature extremes by the total temperature change.

OS

S

Connection Diagrams

SOIC-8 and MSOP-8

(LMH6643)

SOT23-5 (LMH6642) SOIC-8 (LMH6642)

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

Top View

20089461

Top View

SOIC-14 and TSSOP-14

(LMH6644)

Top View

20089462

20089463

Top View

20089468

www.national.com 6

LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic

Typical Performance Characteristics At T

= 25˚C, V+= +5, V−= −5V, RF=RL=2kΩ. Unless oth-

J

erwise specified.

Closed Loop Frequency Response for Various Supplies Closed Loop Gain vs. Frequency for Various Gain

20089457

20089451

Closed Loop Frequency Response for Various

Closed Loop Gain vs. Frequency for Various Gain

Temperature

20089435

Closed Loop Gain vs. Frequency for Various Supplies

20089448

20089450

Closed Loop Frequency Response for Various

Temperature

20089434

www.national.com7