National Semiconductor LM747 Technical data

查询LM747供应商

LM747
Dual Operational Amplifier

LM747 Dual Operational Amplifier

November 1994

General Description

The LM747 is a general purpose dual operational amplifier.
The two amplifiers share a common bias network and power
supply leads. Otherwise, their operation is completely inde­pendent.

Additional features of the LM747 are: no latch-up when in­put common mode range is exceeded, freedom from oscilla­tions, and package flexibility.

The LM747C/LM747E is identical to the LM747/LM747A
except that the LM747C/LM747E has its specifications
guaranteed over the temperature range from 0
instead of

b

55§Ctoa125§C.

Ctoa70§C

§

Connection Diagrams

Metal Can Package

TL/H/11479– 4

Order Number LM747H

See NS Package Number H10C

*VaA and VaB are internally connected.

Features

Y

No frequency compensation required

Y

Short-circuit protection

Y

Wide common-mode and differential voltage ranges

Y

Low power consumption

Y

No latch-up

Y

Balanced offset null

Dual-In-Line Package

Order Number LM747CN or LM747EN

See NS Package Number N14A

TL/H/11479– 5

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/11479

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage

LM747/LM747A
LM747C/LM747E

g

22V

g

18V

Power Dissipation (Note 1) 800 mW

Differential Input Voltage

g

30V

Input Voltage (Note 2)

Output Short-Circuit Duration Indefinite

Operating Temperature Range

LM747/LM747A
LM747C/LM747E 0

Storage Temperature Range

Lead Temperature (Soldering, 10 sec.) 300§C

Electrical Characteristics (Note 3)

Parameter Conditions

Input Offset Voltage T

e

25§C

A

s

R

10 kX 1.0 5.0 2.0 6.0

S

s

R

50X 0.8 3.0

S

s

R

50X 4.0

S

s

R

10 kX 6.0 7.5

S

Average Input Offset 15
Voltage Drift

Input Offset Voltage T
Adjustment Range

Input Offset Current T

e

A

e

A

e

25§C, V

g

20V

S

25§C 3.0 30 20 200 20 200

Average Input Offset
Current Drift

Input Bias Current T

Input Resistance T

Input Voltage Range T

Large Signal T
Voltage Gain V

Output Voltage Swing V

Output Short T
Circuit Current 10 40

Common-Mode R
Rejection Ratio

e

25§C 30 80 80 500 80 500 nA

A

s

T

V

V
R

V

V

V

R
R

V
R
R

R

AMIN

A

S

A

A

S

S

L

S

S

S

S

L

L

S

L

L

A

S

S

s

T

T

A

AMAX

e

e

e

e
e

e

t

e

e

e

e

t

t

e

t

t

e

s

s

e

25§C, V

g

20V 0.5

g

20V 1.0 6.0 0.3 2.0 0.3 2.0

S

25§C

t

25§C, R

g

g

2kX

g

g

g

g

20V, V

15V, V

20V, V

15V, V

5V, V

20V

2kX

L

e

g

15V 50 V/mV

O

e

g

10V 50 200 20 200

O

e

g

15V 32 V/mV

O

e

g

10V 25 15 V/mV

O

e

g

2V 10 V/mV

O

10 kX
2kX

g

15V
10 kX
2kX

25§C1025352525

e

CM

CM

g

e

g

10 kX,V

50 kX,V

LM747A/LM747E LM747 LM747C

Min Typ Max Min Typ Max Min Typ Max

g

10

0.5 nA/

0.210 1.5 0.8 mA

g12g

g

g

13

16
15

12V 70 90 70 90

12V 80 95

b

55§Ctoa125§C

Ctoa70§C

§

b

65§Ctoa150§C

g

15

g

15 mV

70 85 500 300

g12g

13

g12g

13

g12g

g10g

14
13

g12g

g10g

14
13

g

Units

mV/

V/mV

15V

mV

mV

nA

MX

mA

dB

C

§

C

§

V

V

V

2

Electrical Characteristics (Note 3) (Continued)

Parameter Conditions

e

Supply Voltage V
Rejection Ratio R

Transient Response T

Rise Time 0.25 0.8 0.3 0.3 ms

g

20V to V

S

s

50X 86 96

S

s

10 kX 77 96 77 96

R

S

e

25§C, Unity Gain

A

e

g

S

Overshoot 6.0 20 5 5 %

Bandwidth (Note 4) T

Slew Rate T

Supply Current/Amp T

Power Consumption/Amp T

LM747A V

LM747E V

LM747 V

Note 1: The maximum junction temperature of the LM747C/LM747E is 100§C. For operating at elevated temperatures, devies in the TO-5 package must be
derated based on a thermal resistance of 150
W, junction to ambient.

Note 2: For supply voltages less than

Note 3: These specifications apply for

specified. The LM747 and LM747C are specified for V

Note 4: Calculated value from: 0.35/Rise Time (m s).

e

25§C 0.437 1.5 MHz

A

e

25§C, Unity Gain 0.3 0.7 0.5 0.5 V/ms

A

e

25§C 2.5 1.7 2.8 1.7 2.8 mA

A

e

25§C

A

e

g

20V 80 150

V

S

e

g

V

15V 50 85 50 85

S

e

g

20V

S

e

T

T

A

AMIN

e

T

T

A

AMAX

e

g

20V 150

S

e

T

T

A

AMIN

e

T

T

A

AMAX

e

g

15V

S

e

T

T

A

AMIN

e

T

T

A

AMAX

C/W, junction to ambient, or 45§C/W, junction to case. The thermal resistance of the dual-in-line package is 100§C/

§

g

15V, the absolute maximum input voltage is equal to the supply voltage.

s

g

5VsV

g

20V andb55§CsT

S

e

S

LM747A/LM747E LM747 LM747C

Min Typ Max Min Typ Max Min Typ Max

5V

165
135

150 mW
150

60 100
45 75

g

15V andb55§CsT

s

125§C for the LM747A and 0§CsT

A

s

125§C and 0§CsT

A

s

70§C for the LM747E unless otherwise

A

s

70§C, respectively, unless otherwise specified.

A

Units

dB

mW

mW

mW

Schematic Diagram (Each Amplifier)

Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.

TL/H/11479– 1

3