The LM733/LM733C is a two-stage, differential input, differential output, wide-band video amplifier. The use of internal
series-shunt feedback gives wide bandwidth with low phase
distortion and high gain stability. Emitter-follower outputs
provide a high current drive, low impedance capability. Its
120 MHz bandwidth and selectable gains of 10, 100 and
400, without need for frequency compensation, make it a
very useful circuit for memory element drivers, pulse amplifiers, and wide band linear gain stages.
The LM733 is specified for operation over the
a
125§C military temperature range. The LM733C is speci-
fied for operation over the 0
Ctoa70§C temperature range.
§
b
55§Cto
Connection Diagrams
Dual-In-Line Package
Features
Y
120 MHz bandwidth
Y
250 kX input resistance
Y
Selectable gains of 10, 100, 400
Y
No frequency compensation
Y
High common mode rejection ratio at high frequencies
Applications
Y
Magnetic tape systems
Y
Disk file memories
Y
Thin and thick film memories
Y
Woven and plated wire memories
Y
Wide band video amplifiers
Metal Can Package
Note: Pin 5 connected to case.
Top View
Order Number LM733H or LM733CH
See NS Package Number H10D
TL/H/7866– 2
Top View
TL/H/7866– 1
Order Number LM733CN
See NS Package Number N14A
C
1995 National Semiconductor CorporationRRD-B30M115/Printed in U. S. A.
TL/H/7866
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Diffential Input Voltage
Common Mode Input Voltage
V
CC
Output Current10 mA
g
5V
g
6V
g
8V
Power Dissipation (Note 1)500 mW
Junction Temperature
Storage Temperature Range
Operating Temperature Range
LM733
LM733C0
b
b
a
150§C
65§Ctoa150§C
55§Ctoa125§C
Ctoa70§C
§
Lead Temperature (Soldering, 10 sec.)260§C
Electrical Characteristics (T
Characteristics
Test
Circuit
e
25§C, unless otherwise specified, see test circuits, V
A
Test Conditions
LM733LM733C
MinTypMaxMinTypMax
e
g
6.0V)
S
Units
Differential Voltage Gain
Gain 1 (Note 2)300400500250400600
Gain 2 (Note 3)19010011080100120
Gain 3 (Note 4)R
L
e
2kXV
e
3 Vp-p9.010118.01012
OUT
Bandwidth
Gain 14040MHz
Gain 229090MHz
Gain 3120120MHz
Rise Time
Gain 1V
Gain 224.5104.512ns
e
1 Vp-p10.510.5ns
OUT
Gain 32.52.5ns
Propagation DelayV
Gain 17.57.5ns
OUT
e
1 Vp-p
Gain 226.0106.010ns
Gain 33.63.6ns
Input Resistance
Gain 14.04.0kX
Gain 220301030kX
Gain 3250250kX
Input CapacitanceGain 22.02.0pF
Input Offset Current0.43.00.45.0mA
Input Bias Current9.0209.030mA
Input Noise VoltageBWe1 kHz to 10 MHz1212mVrms
Input Voltage Range1
g
1.0
g
1.0V
Common Mode Rejection Ratio
e
Gain 21V
Gain 2V
g
1V fs100 kHz60866086dB
CM
e
g
1V fe5 MHz6060dB
CM
Supply Voltage Rejection Ratio
e
Gain 21DV
g
0.5V50705070dB
S
Output Offset Voltage
Gain 11R
Gain 2 and 30.351.00.351.5V
Output Common Mode Voltage1R
Output Voltage Swing1R
e %
L
e %
L
e
2k3.04.03.04.0
L
0.61.50.61.5V
2.42.93.42.42.93.4V
Output Sink Current2.53.62.53.6mA
Output Resistance2020X
Power Supply Current1R
L
e %
18241824mA
2
Electrical Characteristics (Continued)
(The following specifications apply for
g
6.0V)
Characteristics
Test
Circuit
b
55§CkT
k
125§C for the LM733 and 0§CkT
A
Test Conditions
MinTypMaxMinTypMax
k
70§C for the LM733C, V
A
LM733LM733C
e
S
Units
Differential Voltage Gain
Gain 1200600250600
Gain 21
e
R
2kX,V
L
OUT
e
3 Vp-p
8012080120
Gain 38.012.08.012.0
Input Resistance Gain 288kX
Input Offset Current56mA
Input Bias Current4040mA
Input Voltage Range1
Common Mode Rejection Ratio
Gain 21V
Supply Voltage Rejection Ratio
Gain 21DV
Output Offset Voltage
Gain 11R
Gain 2 and 31.21.5V
Output Voltage Swing1R
e
g
1V fs100 kHz5050dB
CM
e
g
0.5V5050dB
S
e %
L
e
2k2.52.8V
L
g
1
g
1V
1.51.5V
pp
Output Sink Current2.22.5mA
Power Supply Current1R
Note 1: The maximum junction temperature of the LM733 is 150§C, while that of the LM733C is 100§C. For operation at elevated temperatures devices in the TO-
100 package must be derated based on a thermal resistance of 150
package is 90
Note 2: Pins G1A and G1B connected together.
Note 3: Pins G2A and G2B connected together.
Note 4: Gain select pins open.
Note 5: Refer to RETS733X drawing for specifications of LM733H version.
C/W.
§
e %
L
C/W junction to ambient or 45§C/W junction to case. Thermal resistance of the dual-in-line
§
2727mA
Typical Performance Characteristics
Pulse ResponseTemperature
Phase Shift
vs Frequency
Pulse Response vs
Phase Shift
vs Frequency
Pulse Response vs
Supply Voltage
Differential Overdrive
Recovery Time
TL/H/7866– 6
3
Typical Performance Characteristics (Continued)
Voltage Gain vs FrequencyTemperature
Voltage Gain vs R
Output Voltage Swing vs
Frequency
ADJ
Gain vs Frequency
Voltage Gain vs TemperatureSupply Voltage
Supply Current, Output Voltage
and Current Swing vs Supply
Voltage
Gain vs Frequency vs
Supply Voltage
Voltage Gain vs
Output Voltage Swing vs
Load Resistance
Common Mode Rejection
Ratio vs Frequency
Input Noise Voltage vs
Source Resistance
4
Supply Current and Input
Resistance vs Temperature
TL/H/7866– 7
Test Circuits
Test Circuit 1
Test Circuit 2
Schematic Diagram
TL/H/7866– 3
Voltage Gain Adjust Circuit
e
V
(Pin numbers apply to TO-5 package)
e
6V, T
S
25§C
A
TL/H/7866– 4
TL/H/7866– 5
TL/H/7866– 8
5
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM733H or LM733CH
NS Package Number H10D
LM733/LM733C Differential Amplifier
Molded Dual-In-Line Package (N)
Order Number LM733CN
NS Package Number N14A
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SEMICONDUCTOR CORPORATION. As used herein:
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systems which, (a) are intended for surgical implantsupport device or system whose failure to perform can
into the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the life
failure to perform, when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, caneffectiveness.
be reasonably expected to result in a significant injury
to the user.
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