National Semiconductor LM5111 Technical data
LM5111
Dual 5A Compound Gate Driver
General Description
The LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and efficiency.
Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more
than 5A peak from capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage
lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double
the drive current capability. This device is available in the
SOIC-8 package or the thermally enhanced MSOP8-EP
package.
Features
Independently drives two N-Channel MOSFETs
■
Compound CMOS and bipolar outputs reduce output
■
current variation
5A sink/3A source current capability
■
Two channels can be connected in parallel to double the
■
drive current
■
■
■
■
■
■
■
Typical Applications
■
■
■
Packages
■
■
LM5111 Dual 5A Compound Gate Driver
November 5, 2007
Independent inputs (TTL compatible)
Fast propagation times (25 ns typical)
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load)
Available in dual non-inverting, dual inverting and
combination configurations
Supply rail under-voltage lockout protection (UVLO)
LM5111-4 UVLO configured to drive PFET through
OUT_A and NFET through OUT_B
Pin compatible with industry standard gate drivers
Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
SOIC-8
Thermally Enhanced MSOP8-EP
Connection Diagram
SOIC-8, eMSOP-8
20112301
© 2007 National Semiconductor Corporation 201123 www.national.com
Ordering Information
LM5111
Order Number Package Type NSC Package Drawing Supplied As
LM5111-1M SOIC-8 M08A Shipped in anti-static units, 95 Units/Rail
LM5111-1MX SOIC-8 M08A 2500 shipped in Tape & Reel
LM5111-2M SOIC-8 M08A Shipped in anti-static units, 95 Units/Rail
LM5111-2MX SOIC-8 M08A 2500 shipped in Tape & Reel
LM5111-3M SOIC-8 M08A Shipped in anti-static units, 95 Units/Rail
LM5111-3MX SOIC-8 M08A 2500 shipped in Tape & Reel
LM5111-1MY MSOP8-EP MUY08A 1000 shipped in Tape & Reel
LM5111-1MYX MSOP8-EP MUY08A 3500 shipped in Tape & Reel
LM5111-2MY MSOP8-EP MUY08A 1000 shipped in Tape & Reel
LM5111-2MYX MSOP8-EP MUY08A 3500 shipped in Tape & Reel
LM5111-3MY MSOP8-EP MUY08A 1000 shipped in Tape & Reel
LM5111-3MYX MSOP8-EP MUY08A 3000 shipped in Tape & Reel
LM5111-4M SOIC-8 M08A Shipped in anti-static units, 95 Units/Rail
LM5111-4MX SOIC-8 M08A 2500 shipped in Tape & Reel
LM5111-4MY MSOP8-EP MUY08A 1000 shipped in Tape & Reel
LM5111-4MYX MSOP8-EP MUY08A 3500 shipped in Tape & Reel
Pin Descriptions
Pin Name Description Application Information
1 NC No Connect
2 IN_A
3 VEE Ground reference for both inputs and
4 IN_B
5 OUT_B Output for the ‘B’ side driver. Voltage swing of this output is from VCC to VEE. The output
6 VCC Positive output supply Locally decouple to VEE
7 OUT_A. Output for the ‘A’ side driver. Voltage swing of this output is from VCC to VEE. The output
8 NC No Connect
‘A’ side control input
outputs
‘B’ side control input
TTL compatible thresholds.
Connect to power ground.
TTL compatible thresholds.
stage is capable of sourcing 3A and sinking 5A.
.
stage is capable of sourcing 3A and sinking 5A.
Configuration Table
Part Number
LM5111-1M/-1MX/-1MY/-1MYX Non-Inverting (Low in UVLO) Non-Inverting (Low in UVLO) SOIC-8, MSOP8-EP
LM5111-2M/-2MX/-2MY/-2MYX Inverting (Low in UVLO) Inverting (Low in UVLO) SOIC-8, MSOP8-EP
LM5111-3M/-3MX/-3MY/-3MYX Inverting (Low in UVLO) Non-Inverting (Low in UVLO) SOIC-8, MSOP8-EP
LM5111-4M/-4MX/-4MY/-4MYX Inverting (High in UVLO) Non-Inverting (Low in UVLO) SOIC-8, MSOP8-EP
www.national.com 2
“A” Output Configuration “B” Output Configuration
Package
LM5111
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VCC to V
IN to V
EE
EE
−0.3V to 15V
−0.3V to 15V
Storage Temperature Range, (T
Maximum Junction Temperature,
(TJ(max))
Operating Junction Temperature +125°C
ESD Rating 2kV
STG
)
−55°C to +150°C
+150°C
Electrical Characteristics
TJ = −40°C to +125°C, VCC = 12V, VEE = 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
V
V
CCR
V
CCH
I
CC
CONTROL INPUTS
V
IH
V
IL
V
thH
V
thL
HYS Input Hysteresis 400 mV
I
IL
I
IH
OUTPUT DRIVERS
R
OH
R
OL
I
Source
I
Sink
Operating Range VCC−V
CC
VCC Under Voltage Lockout
VCC−V
EE
EE
(rising)
VCC Under Voltage Lockout
Hysteresis
V
Supply Current (ICC) IN_A = IN_B = 0V (5111-1) 1 2
CC
IN_A = IN_B = VCC (5111-2)
IN_A = VCC, IN_B = 0V (5111-3)
Logic High
Logic Low
High Threshold
Low Threshold
Input Current Low IN_A=IN_B=VCC (5111-1-2-3)
Input Current High IN_B=VCC (5111-3)
IN_A=IN_B=VCC (5111-2)
IN_A=IN_B=VCC (5111-1)
IN_A=VCC (5111-3)
Output Resistance High I
Output Resistance Low I
= −10 mA (Note 2)
OUT
= + 10 mA (Note 2)
OUT
Peak Source Current OUTA/OUTB = VCC/2,
200 ns Pulsed Current
Peak Sink Current OUTA/OUTB = VCC/2,
200 ns Pulsed Current
3.5 14 V
2.3 2.9 3.5 V
230 mV
1 2
1 2
2.2 V
0.8 V
1.3 1.75 2.2 V
0.8 1.35 2.0 V
−1 0.1 1
10 18 25
−1 0.1 1
10 18 25
-1 0.1 1
30 50
1.4 2.5
3 A
5 A
mA
µA
Ω
Ω
3 www.national.com
Symbol Parameter Conditions Min Typ Max Units
SWITCHING CHARACTERISTICS
LM5111
td1 Propagation Delay Time Low to
High, IN rising (IN to OUT)
td2 Propagation Delay Time High to
Low, IN falling (IN to OUT)
t
r
t
f
Rise Time C
Fall Time C
C
= 2 nF, see Figure 1
LOAD
C
= 2 nF, see Figure 1
LOAD
= 2 nF, see Figure 1
LOAD
= 2 nF, see Figure 1
LOAD
25 40 ns
25 40 ns
14 25 ns
12 25 ns
LATCHUP PROTECTION
AEC - Q100, Method 004 TJ = 150°C
500 mA
THERMAL RESISTANCE
θ
JA
Junction to Ambient,
0 LFPM Air Flow
θ
JC
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.
Junction to Case SOIC-8 Package
SOIC-8 Package
MSOP8-EP Package
MSOP8-EP Package
170
60
70
4.7
°C/W
°C/W
Timing Waveforms
(a)
20112305
FIGURE 1. (a) Inverting, (b) Non-Inverting
www.national.com 4
(b)
20112306
Loading...