LM5070
Integrated Power Over Ethernet PD Interface and PWM
Controller
General Description
The LM5070 power interface port and pulse width modulation (PWM) controller provides a complete integrated solution for Powered Devices (PD) that connect into Power over
Ethernet (PoE) systems. The LM5070 integrates an 80V,
400mA line connection switch and associated control for a
fully IEEE 802.3af compliant interface with a full featured
current mode pulse width modulator dc-dc converter. All
power sequencing requirements between the controller interface and switch mode power supply (SMPS) are integrated into the IC. Two options are available providing either
an 80% maximum duty cycle limit with slope compensation
(on the –80 suffix) device or a 50% maximum duty cycle limit
and no slope compensation on the (– 50 suffix) device.
Features
n Fully Compliant 802.3af Power Interface Port
n 80V, 1Ω, 400 mA Internal MOSFET
n Programmable Inrush Current Limit
n Detection Resistor Disconnect Function
n Programmable Classification Current
n Programmable Under-voltage Lockout with
Programmable Hysteresis
n Thermal Shutdown Protection
n Current Mode Pulse Width Modulator
n Supports both Isolated and Non-Isolated Applications
n Error Amplifier and Reference for Non-Isolated
Applications
n Programmable Oscillator Frequency
n Programmable Soft-start
n 80% Maximum Duty Cycle Limiter, Slope Compensation
(-80 device)
n 50% Maximum Duty Cycle Limiter, No Slope
Compensation (-50 device)
n 800 mA Peak Gate Driver
Packages
n TSSOP-16
n LLP-16 (5 mmx5mm)
LM5070 Integrated Power Over Ethernet PD Interface and PWM Controller
2RSIGSignature resistor pin.Connect a 25kΩ signature resistor from V
3RCLASSClassification resistor pin.Connect the classification programming resistor from this pin to
4UVLOLine under-voltage lockout.An external resistor divider from V
5UVLORTN Return for the external UVLO resistors, if
6RCLPCurrent limit programming pin.Programs the inrush current limit for the device. If left open, the
7V
8RTNSystem return for the PWM converter.The drain of the internal current limiting power MOSFET which
9OUTOutput of the PWM controller.DC-DC converter gate driver output with 800mA peak sink current
10V
11FBFeedback signal.Inverting input of the internal error amplifier. The non-inverting
12COMPThe output of the error amplifier and
13CSCurrent sense input.Current sense input for current mode control and over-current
14RT / SYNC Oscillator timing resistor pin and
15SSSoft-start input.An external capacitor and an internal 10uA current source set the
16ARTNAnalog PWM supply return.RTN for sensitive analog circuitry including the SMPS current limit
—EPExposed PAD, underside of the LLP
System high potential input.The diode “OR” of several lines entering the PD, it is the more
IN
positive input potential.
to this pin for signature
IN
detection.
.
V
EE
to UVLORTN programs the
IN
shutdown levels with a 2.00V threshold at the UVLO pin.
Hysteresis is set by a switched internal 10uA current source that
forces additional current into the resistor divider.
Connect the bottom resistor of the resistor divider between the
used.
UVLO pin and this pin.
inrush current limit will default to 400mA max.
System low potential input.Diode “OR’d” to the RJ45 connector and PSE’s –48V supply, it is
EE
the more negative input potential.
connects V
to the return path of the dc-dc converter.
EE
capability.
Output of the internal high voltage series
CC
pass regulator. Regulated output voltage
is nominally 7.8V.
When the auxiliary transformer winding (if used) raises the voltage
on this pin above the regulation set point, the internal series pass
regulator will shutdown, reducing the controller power dissipation.
input is internally connected to a 1.25V reference.
COMP pull-up is provided by an internal 5K resistor which may be
input to the Pulse Width Modulator.
used to bias an opto-coupler transistor.
protection. Current limiting is accomplished using a dedicated
current sense comparator. If the CS pin voltage exceeds 0.5V the
OUT pin switches low for cycle-by-cycle current limiting. CS is held
low for 50ns after OUT switches high to blank leading edge current
spikes.
An external resistor connected from RT to ARTN sets the oscillator
synchronization input.
frequency. This pin will also accept narrow ac-coupled
synchronization pulses from an external clock.
soft-start ramp rate.
amplifier.
Internally bonded to the die substrate. Connect to V
package option.
low thermal impedance.
potential for
EE
LM5070
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
LM5070
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Specifications in standard type face are for TJ= +25˚C and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified: V
SymbolParameterConditionsMinTypMaxUnits
Powered Interface
IOSOffset CurrentV
VCLSS(ON) Signature Resistor Disable /
Classification Current Turn On
VCLSS(OFF) Classification Current Turn OffVINwith respect to V
Classification VoltageWith respect to V
ICLASSSupply Current During
Classification
IDCSupply Current During Normal
Operation
UVLO Pin Reference VoltageV
UVLO Hysteresis CurrentV
Softstart ReleaseRTN falling with respect
Softstart Release HysteresisRTN rising with respect
RDS(ON)PowerFET ResistanceI = 350mA,
ILEAKSMPS Bias CurrentV
ILIMDefault Current LimitV
ILIMDefault Current LimitV
Current Limit Programming
Accuracy
Startup Regulator
VccRegV
RegulationOpen ckt7.57.88.1V
CC
V
Current Limit(Note 4)1520mA
CC
= 48V, VCC= 10V, RT = 30.3kΩ.
IN
<
10.0V10V
IN
V
with respect to V
IN
V
=17V0.51.5mA
IN
EE
EE
EE
10.011.512.5V
20.522.023.0V
1.431.51.57V
OUT floating11.9mA
>
12V1.952.002.05V
IN
>
UVLO8.01011.5uA
IN
1.21.451.7V
to V
EE
0.81.11.3V
to V
EE
12.2Ω
= 48V
V
IN
= 0V, VIN= RTN =
EE
100uA
57V
= 0V, RTN = 3.0V,
EE
350390420mA
Temp = 0˚C to 85˚C
= 0V, RTN = 3.0V,
EE
325390420mA
Temp = -40˚C to 125˚C
VEE= 0V, RTN = 3.0V,
-20+20%
RCLP = 80.6kΩ
260˚C
240˚C
219˚C
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Electrical Characteristics (Note 3) (Continued)
Specifications in standard type face are for TJ= +25˚C and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified: V
SymbolParameterConditionsMinTypMaxUnits
V
Supply
CC
V
UVLO (Rising)VccReg –
CC
UVLO (Falling)5.96.256.6V
V
CC
Supply Current (Icc)Cload = 01.53mA
Error Amplifier
GBWGain Bandwidth4MHz
DC Gain75dB
Input VoltageFB = COMP1.219
COMP Sink CapabilityFB=1.5V COMP=1V520mA
Current Limit
ILIM Delay to OutputCS step from 0 to 0.6V,
Cycle by Cycle Current Limit
Threshold Voltage
Leading Edge Blanking Time55ns
CS Sink Impedance (clocked)2555Ω
Softstart
Softstart Current Source71013uA
Oscillator(Note 5)
Frequency1
(RT = 30.3K)
Frequency2
(RT = 10.5K)
Sync threshold3.13.8V
PWM Comparator
Delay to OutputCOMP set to 2V
Min Duty CycleCOMP=0V0%
Max Duty Cycle (-80 Device)80%
Max Duty Cycle (-50 Device)50%
COMP to PWM Comparator
Gain
COMP Open Circuit Voltage4.55.46.3V
COMP Short Circuit CurrentCOMP= 0V0.61.11.5mA
Slope Compensation
Slope Comp Amplitude
(LM5070-80 Device Only)
Output Section
Output High SaturationI
Output Low SaturationI
Rise timeCload = 1nF15ns
Fall timeCload = 1nF15ns
= 48V, VCC= 10V, RT = 30.3kΩ.
IN
VccReg –
300mV
100mV
1.281
1.212
1.288
20ns
time to onset of OUT
transition (90%)
0.440.50.56V
175200225KHz
505580665KHz
25ns
CS stepped 0 to 0.4V,
time to onset of OUT
transition low
0.33
Delta increase at PWM
105mV
Comparator to CS
= 50mA,
out
V
CC-VOUT
= 100mA0.250.75V
out
0.250.75V
V
LM5070
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Electrical Characteristics (Note 3) (Continued)
Specifications in standard type face are for TJ= +25˚C and those in boldface type apply over the full operating junction tem-
LM5070
perature range. Unless otherwise specified: V
SymbolParameterConditionsMinTypMaxUnits
Thermal Shutdown
TsdThermal Shutdown Temp.165˚C
Thermal
Shutdown
Hysteresis
Thermal Resistance
θ
JA
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: For detailed information on soldering plastic TSSOP and LLP package, refer to the Packaging Databook available from National Semiconductor.
Note 3: Min and Max limits are 100% production tested at 25 ˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 4: Device thermal limitations may limit usable range.
Note 5: Specification applies to the oscillator frequency. The operational frequency of the LM5070-50 devices is divided by two.
Junction to AmbientMTC Package125˚C/W
= 48V, VCC= 10V, RT = 30.3kΩ.
IN
25˚C
SDA Package32˚C/W
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