National Semiconductor CD4007M, CD4007C Service Manual

CD4007M/CD4007C Dual
Complementary Pair Plus Inverter

CD4007M/CD4007C Dual Complementary Pair Plus Inverter

February 1988

General Description

The CD4007M/CD4007C consists of three complementary
pairs of N- and P-channel enhancement mode MOS transis­tors suitable for series/shunt applications. All inputs are pro­tected from static discharge by diode clamps to V
V

.

SS

For proper operation the voltages at all pins must be con­strained to be between V
times.

SS

b

0.3V and V

DD

a

0.3V at all

DD

and

Connection Diagram

Dual-In-Line Package

Top View

Note: All P-channel substrates are connected to V

and all N-channel substrates are connected to VSS.

Features

Y

Wide supply voltage range 3.0V to 15V

Y

High noise immunity 0.45 VCC(typ.)

TL/F/5943– 1

DD

Order Number CD4007

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/5943

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Voltage at Any Pin V

Operating Temperature Range

CD4007M
CD4007C

SS

b

0.3V to V

b

b

a

0.3V

DD

55§Ctoa125§C

40§Ctoa85§C

Storage Temperature Range

Power Dissipation (PD)

Dual-In-Line 700 mW
Small Outline 500 mW

Operating V

Range V

DD

a

SS

Lead Temperature

(Soldering, 10 seconds) 260

DC Electrical Characteristics CD4007M

Limits

Symbol Parameter Conditions

b

55§C

Min Typ Max Min Typ Max Min Typ Max

I

Quiescent Device V

L

Current V

P

Quiescent Device V

D

Dissipation Package V

V

Output Voltage V

OL

Low Level V

V

Output Voltage V

OH

High Level V

V

Noise Immunity V

NL

(All Inputs) V

V

Noise Immunity V

NH

(All Inputs) V

IDN Output Drive Current V

N-Channel V

IDP Output Drive Current V

P-Channel V

I

Input Current 10 pA

I

e

5.0V 0.05 0.001 0.05 3.0 mA

DD

e

10V 0.1 0.001 0.1 6.0 mA

DD

e

5.0V 0.25 0.005 0.25 15 mW

DD

e

10V 1.0 0.001 1.0 60 mW

DD

e

5.0V 0.05 0 0.05 0.05 V

DD

e

10V 0.05 0 0.05 0.05 V

DD

e

5.0V 4.95 4.95 5.0 4.95 V

DD

e

10V 9.95 9.95 10 9.95 V

DD

DD
DD

DD
DD

DD
DD

DD
DD

e

e

e

e

e

e

e

e

5.0V, V
10V, V

50V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

e

3.6V 1.5 2.25 1.5 1.4 V

O

e

7.2V 3.0 4.5 3.0 2.9 V

O

e

0.95V 3.6 3.5 2.25 3.5 V

O

e

2.9V 7.1 7.0 4.5 7.0 V

O

e

O

e

O

e

O

e

O

0.4V, V

0.5V, V

2.5V, V

9.5V, V

e

VDD0.75 0.6 1.0 0.4 mA

I

e

V

I

e

I

e

I

1.6 1.3 2.5 0.95 mA

DD

b

1.75

V

SS

b

V

1.35

SS

b

1.4b4.0

b

1.1b2.5

a

25§C

b

b

b

65§Ctoa150§C

3.0V to V

a

a

15V

SS

C

§

125§C Units

1.0 mA

0.75 mA

DC Electrical Characteristics CD4007C

Limits

Symbol Parameter Conditions

b

40§C

Min Typ Max Min Typ Max Min Typ Max

I

Quiescent Device V

L

Current V

P

Quiescent Device V

D

Dissipation Package V

V

Output Voltage V

OL

Low Level V

V

Output Voltage V

OH

High Level V

V

Noise Immunity V

NL

(All inputs) V

V

Noise Immunity V

NH

(All Inputs) V

IDN Output Drive Current V

N-Channel V

IDP Output Drive Current V

P-Channel V

I

Input Current 10 pA

I

Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage.

e

5.0V 0.5 0.005 0.05 15 m A

DD

e

10V 1.0 0.005 1.0 30 m A

DD

e

5.0V 2.5 0.025 2.5 75 mW

DD

e

10V 10 0.05 10 300 mW

DD

e

5.0V 0.05 0 0.01 0.05 V

DD

e

10V 0.05 0 0.01 0.05 V

DD

e

5.0V 4.95 4.95 5.0 4.95 V

DD

e

10V 9.95 9.95 10 9.95 V

DD

DD
DD

DD
DD

DD
DD

DD
DD

e

e

e

e

e

e

e

e

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

e

3.6V 1.5 2.25 1.5 1.4 V

O

e

7.2V 3.0 4.5 3.0 2.9 V

O

e

0.95V 3.6 3.5 2.25 3.5 V

O

e

2.9V 7.1 7.0 4.5 7.0 V

O

e

O

e

O

e

O

e

O

0.4V, V

0.5V, V

2.5V, V

9.5V, V

e

VDD0.35 0.3 1.0 0.24 mA

I

e

VDD1.2 1.0 2.5 0.8 mA

I

e

b

V

I

e

I

1.3

SS

b

V

0.65

SS

2

a

b

1.1b4.0

b

0.55b2.5

25§C

b

b

a

85§C Units

0.9 mA

0.45 mA

AC Electrical Characteristics* CD4007M

T

A

e

25§C and C

e

15 pF and rise and fall timese20 ns. Typical temperature coefficient for all values of V

L

DD

Symbol Parameter Conditions Min Typ Max Units

e

t

t

PLH

PHL

e

t

t

TLH

THL

C

I

*AC Parameters may be generated by DC correlated testing.

AC Electrical Characteristics* CD4007C

e

T

25§C and C

A

Propagation Delay Time V

Transition Time V

Input Capacitance Any Input 5.0 pF

e

15 pF and rise and fall timese20 ns. Typical temperature coefficient for all values of V

L

e

5.0V 35 60 ns

DD

e

V

10V 20 40 ns

DD

e

5.0V 50 75 ns

DD

e

V

10V 30 40 ns

DD

DD

Symbol Parameter Conditions Min Typ Max Units

e

t

t

PLH

PHL

e

t

t

TLH

THL

C

I

*AC Parameters are guaranteed by DC correlated testing.

Propagation Delay Time V

Transition Time V

Input Capacitance Any Input 5 pF

e

5.0V 35 75 ns

DD

e

V

10V 20 50 ns

DD

e

5.0V 50 100 ns

DD

e

V

10V 30 50 ns

DD

AC Test Circuits

e

0.3%/§C

e

0.3%/§C

TL/F/5943– 2 TL/F/5943– 3 TL/F/5943– 4

Switching Time Waveforms

TL/F/5943– 5

3

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J)

Order Number CD4007MJ or CD4007CJ

NS Package Number J14A

CD4007M/CD4007C Dual Complementary Pair Plus Inverter

Molded Dual-In-Line Package (N)

Order Number CD4007MN or CD4007CN

NS Package Number N14A

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

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systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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