National Semiconductor CD4002M, CD4012M, CD4002C, CD4012C Service Manual

CD4002M/CD4002C Dual 4-Input NOR Gate
CD4012M/CD4012C Dual 4-Input NAND Gate

March 1988

CD4002M/CD4002C Dual 4-Input NOR Gate

CD4012M/CD4012C Dual 4-Input NAND Gate

General Description

These NOR and NAND gates are monolithic complementa­ry MOS (CMOS) integrated circuits. The N- and P-channel
enhancement mode transistors provide a symmetrical cir­cuit with output swings essentially equal to the supply volt­age. This results in high noise immunity over a wide supply
voltage range. No DC power other than that caused by leak­age current is consumed during static conditions. All inputs
are protected against static discharge and latching condi­tions.

Connection Diagrams

CD4002

Dual-In-Line Package

TL/F/5940– 1

Top View

Order Number CD4002 or CD4012

Features

Y

Wide supply voltage range 3.0V to 15V

Y

Low power 10 nW (typ.)

Y

High noise immunity 0.45 VDD(typ.)

Applications

Y

Automotive

Y

Data terminals

Y

Instrumentation

Y

Medical Electronics

Dual-In-Line Package

Y

Y

Y

Y

CD4012

Top View

Alarm system
Industrial controls
Remote metering
Computers

TL/F/5940– 2

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/5940

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Voltage at Any Pin V

Operating Temperature Range

CD4002M, CD4012M
CD4002C, CD4012C

SS

b

0.3V to V

DD

b

55§Ctoa125§C

b

40§Ctoa85§C

a

0.3V

Storage Temperature Range (T

S

Power Dissipation (PD)

Dual-In-Line 700 mW
Small Outline 500 mW

Operating Range (V

)V

DD

Lead Temperature (TL)

(Soldering, 10 seconds) 260

b

)

SS

a

3.0V to V

65§Ctoa150§C

SS

DC Electrical Characteristics CD4002M, CD4012M

Limits

Symbol Parameter Conditions

b

55§C

Min Max Min Typ Max Min Max

I

P

V

V

V

V

IDN Output Drive Current V

IDP Output Drive Current V

IDN Output Drive Current V

IDP Output Drive Current V

I

Quiescent V

DD

Device Current V

Quiescent Device V

D

Dissipation/Package V

Output Voltage V

OL

Low Level V

Output Voltage V

OH

High Level V

Noise Immunity V

NL

(All Inputs) V

Noise Immunity V

NH

(All Inputs) V

N-Channel (4002) V
(Note 2)

P-Channel (4002) V
(Note 2)

N-Channel (4012) V
(Note 2)

P-Channel (4012) V
(Note 2)

Input Current 10 pA

I

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.

Note 2: I

N and IDP are tested one output at a time.

D

e

5.0V 0.05 0.001 0.05 3.0 mA

DD

e

10V 0.1 0.001 0.1 6 mA

DD

e

5.0V 0.25 0.005 0.25 15 mW

DD

e

10V 1.0 0.01 1.0 60 mW

DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

e

e

e

e

e

e

e

e

e

e

e

e

e

e

e

e

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

e

I

e

I

e

I

e

I

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

VDD,I

VDD,I

VSS,I

VSS,I

3.6V, I

7.2V, I

0.95V, I

2.9V, I

0.4V, V

0.5V, V

2.5V, V

9.5V, V

0.4V, V

0.5V, V

2.5V, V

9.5V, V

e

0A 0.05 0 0.05 0.05 V

O

e

0A 0.05 0 0.05 0.05 V

O

e

0A 4.95 4.95 5.0 4.95 V

O

e

0A 9.95 9.95 10 9.95 V

O

e

0A 1.5 1.5 2.25 1.4 V

O

e

0A 3.0 3.0 4.5 2.9 V

O

e

0A 1.4 1.5 2.25 1.5 V

O

e

0A 2.9 3.0 4.5 3.0 V

O

e

V

I

e

I

e

I

e

I

e

I

e

I

e

I

e

I

0.5 0.40 1.0 0.28 mA

DD

V

1.1 0.9 2.5 0.65 mA

DD

b

V

0.62

SS

b

V

0.62

SS

VDD0.31 0.25 0.5 0.175 mA

V

0.63 0.5 0.6 0.35 mA

DD

b

V

0.31

SS

b

V

0.75

SS

a

b

0.5b2.0

b

0.5b1.0

b

0.25b0.5

b

0.6b1.2

25§C

a

125§C Units

b

0.35 mA

b

0.35 mA

b

0.175 mA

b

0.4 mA

a

15V

C

§

2

DC Electrical Characteristics CD4002C, CD4012C

Limits

Symbol Parameter Conditions

b

55§C

Min Max Min Typ Max Min Max

I

P

V

V

V

V

IDN Output Drive Current V

IDN Output Drive Current V

IDP Output Drive Current V

IDP Output Drive Current V

I

Quiescent V

DD

Device Current V

Quiescent Device V

D

Dissipation/Package V

Output Voltage V

OL

Low Level V

Output Voltage V

OH

High Level V

Noise Immunity V

NL

(All Inputs) V

Noise Immunity V

NH

(All Inputs) V

N-Channel (4002) V
(Note 2)

N-Channel (4012) V
(Note 2)

P-Channel (4002) V
(Note 2)

P-Channel (4012) V
(Note 2)

Input Current 10 pA

I

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.

Note 2: I

N and IDP are tested one output at a time.

D

e

5.0V 0.5 0.005 0.5 15 mA

DD

e

10V 5.0 0.005 5.0 30 mA

DD

e

5.0V 2.5 0.025 2.5 75 mW

DD

e

10V 50 0.05 50 300 mW

DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

DD
DD

e

e

e

e

e

e

e

e

e

e

e

e

e

e

e

e

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

5.0V, V
10V, V

e

I

e

I

e

I

e

I

t

O

t

O

s

O

s

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

e

O

VDD,I

VDD,I

VSS,I

VSS,I

3.6V, I

7.2V, I

0.95V, I

2.9V, I

0.4V, V

0.5V, V

0.4V, V

0.5V, V

2.5V, V

9.5V, V

2.5V, V

9.5V, V

e

0A 0.05 0 0.05 0.05 V

O

e

0A 0.05 0 0.05 0.05 V

O

e

0A 4.95 4.95 5.0 4.95 V

O

e

0A 9.95 9.95 10 9.95 V

O

e

0A 1.5 1.5 2.25 1.4 V

O

e

0A 3.0 3.0 4.5 2.9 V

O

e

0A 1.4 1.5 2.25 1.5 V

O

e

0A 2.9 3.0 4.5 3.0 V

O

e

V

I

e

I

e

I

e

I

e

I

e

I

e

I

e

I

0.35 0.3 1.0 0.24 mA

DD

V

0.72 0.6 2.5 0.48 mA

DD

VDD0.145 0.12 0.5 0.095 mA

V

0.3 0.25 0.6 0.2 mA

DD

b

V

0.35

SS

b

V

V

V

0.3

SS

b

0.145

SS

b

0.35

SS

a

b

0.3b2.0

b

0.25b1.0

b

0.12b0.5

b

0.3b1.2

25§C

a

85§C Units

b

0.24 mA

b

0.2 mA

b

0.095 mA

b

0.24 mA

3

AC Electrical Characteristics* T

temperature coefficient for all values of V

DD

e

0.3%/§C.

e

A

25§C, C

e

15 pF, and input rise and fall timese20 ns. Typical

L

Symbol Parameter Conditions Min Typ Max Units

CD4002M

t

t

t

t

C

PHL

PLH

THL

TLH

IN

Propagation Delay Time V
High to Low Level V

Propagation Delay Time V
Low to High Level V

Transition Time High V
to Low Level V

Transition Time Low V
to High Level V

Input Capacitance Any Input 5.0 pF

e

5.0V 35 50 ns

DD

e

10V 25 40 ns

DD

e

5.0V 35 50 ns

DD

e

10V 25 40 ns

DD

e

5.0V 65 175 ns

DD

e

10V 35 75 ns

DD

e

5.0V 65 125 ns

DD

e

10V 35 70 ns

DD

CD4002C

t

PHL

T

PLH

t

THL

t

TLH

C

IN

*AC Parameters are guaranteed by DC correlated testing.

Propagation Delay Time V
High to Low Level V

Propagation Delay Time V
Low to High Level V

Transition Time High V
to Low Level V

Transition Time Low V
to High Level V

Input Capacitance Any Input 5.0 pF

e

5.0V 35 120 ns

DD

e

10V 25 65 ns

DD

e

5.0V 35 80 ns

DD

e

10V 25 55 ns

DD

e

5.0V 65 300 ns

DD

e

10V 35 125 ns

DD

e

5.0V 65 200 ns

DD

e

10V 35 115 ns

DD

AC Electrical Characteristics* T

temperature coefficient for all values of V

DD

e

0.3%/§C.

e

A

25§C, C

e

15 pF, and input rise and fall timese20 ns. Typical

L

Symbol Parameter Conditions Min Typ Max Units

CD4012M

t

t

t

t

C

PHL

PLH

THL

TLH

IN

Propagation Delay Time V
High to Low Level V

Propagation Delay Time V
Low to High Level V

Transition Time High V
to Low Level V

Transition Time Low V
to High Level V

Input Capacitance Any Input 5.0 pF

e

5.0V 50 75 ns

DD

e

10V 25 40 ns

DD

e

5.0V 50 75 ns

DD

e

10V 25 40 ns

DD

e

5.0V 75 125 ns

DD

e

10V 50 75 ns

DD

e

5.0V 75 100 ns

DD

e

10V 40 60 ns

DD

CD4012C

t

PHL

T

PLH

t

THL

t

TLH

C

IN

*AC Parameters are guaranteed by DC correlated testing.

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature
Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual
device operation.

Propagation Delay Time V
High to Low Level V

Propagation Delay Time V
Low to High Level V

Transition Time High V
to Low Level V

Transition Time Low V
to High Level V

Input Capacitance Any Input 5.0 pF

e

5.0V 50 100 ns

DD

e

10V 25 50 ns

DD

e

5.0V 50 100 ns

DD

e

10V 25 50 ns

DD

e

5.0V 75 150 ns

DD

e

10V 50 100 ns

DD

e

5.0V 75 125 ns

DD

e

10V 40 75 ns

DD

4

Physical Dimensions inches (millimeters)

Order Number CD4002MJ, CD4002CJ, CD4012MJ or CD4012CJ

Ceramic Dual-In-Line Package (J)

NS Package Number J14A

5

Physical Dimensions inches (millimeters) (Continued)

Order Number CD4002MN, CD4002CN, CD4012MN or CD4012CN

Molded Dual-In-Line Package (N)

NS Package Number N14A

CD4002M/CD4002C Dual 4-Input NOR Gate

CD4012M/CD4012C Dual 4-Input NAND Gate

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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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