CD4001BM/CD4001BC Quad 2-Input
NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input
NAND Buffered B Series Gate
March 1988
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
General Description
These quad gates are monolithic complementary MOS
(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source
and sink current capabilities and conform to standard B series output drive. The devices also have buffered outputs
which improve transfer characteristics by providing very
high gain.
All inputs are protected against static discharge with diodes
to V
and VSS.
DD
Schematic Diagrams
TL/F/5939– 1
Features
Y
Low power TTLFan out of 2 driving 74L
compatibilityor 1 driving 74LS
Y
5V–10V–15V parametric ratings
Y
Symmetrical output characteristics
Y
Maximum input leakage 1 m A at 15V over full temperature range
CD4001BC/BM
(/4 of device shown
eAa
J
B
TL/F/5939– 2
Logical ‘‘1’’eHigh
Logical ‘‘0’’
*All inputs protected by standard
CMOS protection circuit.
e
Low
CD4011BC/BM
(/4 of device shown
e
A#B
J
Logical ‘‘1’’eHigh
Logical ‘‘0’’
TL/F/5939– 6
TL/F/5939– 5
C
1995 National Semiconductor CorporationRRD-B30M105/Printed in U. S. A.
TL/F/5939
*All inputs protected by standard
CMOS protection circuit.
e
Low
Page 2
Absolute Maximum Ratings (Notes 1 and 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Voltage at any Pin
b
0.5V to V
DD
a
0.5V
Operating Conditions
Operating Range (VDD)3V
Operating Temperature Range
CD4001BM, CD4011BM
CD4001BC, CD4011BC
Power Dissipation (PD)
Dual-In-Line700 mW
Small Outline500 mW
V
Range
DD
Storage Temperature (TS)
Lead Temperature (T
(Soldering, 10 seconds)260
)
L
b
0.5 VDCtoa18 V
b
65§Ctoa150§C
DC
C
§
DC Electrical Characteristics CD4001BM, CD4011BM (Note 2)
b
SymbolParameterConditions
I
DD
V
V
V
V
I
OL
Quiescent Device V
CurrentV
Low LevelV
OL
Output VoltageV
High LevelV
OH
Output VoltageV
Low LevelV
IL
Input VoltageV
High LevelV
IH
Input VoltageV
Low Level Output V
CurrentV
(Note 3)V
I
OH
High Level Output V
CurrentV
(Note 3)V
I
IN
Input CurrentV
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
V
DD
e
5V, V
10V, V
15V, V
IN
IN
IN
VDDor V
e
e
5V0.0500.050.05V
10VlI
O
15V (0.0500.050.05V
5V4.954.9554.95V
10VlI
O
15V (14.9514.951514.95V
e
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
15V, V
15V, V
4.5V1.521.51.5V
O
e
O
e
O
e
0.5V3.53.533.5V
O
e
O
e
O
e
0.4V0.640.510.880.36mA
O
e
O
e
O
e
4.6V
O
e
O
e
O
e
IN
e
IN
SS
VDDor V
SS
VDDor V
SS
k
1 mA0.0500.050.05V
l
k
1 mA9.959.95109.95V
l
9.0V3.043.03.0V
13.5V4.064.04.0V
1.0V7.07.067.0V
1.5V11.011.0911.0V
0.5V1.61.32.250.9mA
1.5V4.23.48.82.4mA
9.5V
13.5V
0V
15V0.1010
55§C
MinMaxMinTypMaxMinMax
0.250.0040.257.5mA
0.500.0050.5015m A
1.00.0061.030m A
b
0.64
b
1.6
b
4.2
b
0.10
Connection Diagrams
CD4001BC/CD4001BM
Dual-In-Line Package
a
25§C
b
0.51b0.88
b
1.3b2.25
b
b
3.4
8.8
b
5
b
10
b
5
CD4011BC/CD4011BM
Dual-In-Line Package
to 15 V
DC
b
55§Ctoa125§C
b
40§Ctoa85§C
a
125§C
b
0.36mA
b
0.9mA
b
2.4mA
b
0.10
b
1.0mA
0.101.0mA
DC
Units
Top View
TL/F/5939– 3
Top View
TL/F/5939– 4
Order Number CD4001B or CD4011B
2
Page 3
DC Electrical Characteristics CD4001BC, CD4011BC (Note 2)
b
SymbolParameterConditions
I
DD
V
V
V
V
I
OL
Quiescent Device V
CurrentV
Low LevelV
OL
Output VoltageV
High LevelV
OH
Output VoltageV
Low LevelV
IL
Input VoltageV
High LevelV
IH
Input VoltageV
Low Level Output V
CurrentV
(Note 3)V
I
OH
High Level Output V
CurrentV
(Note 3)V
I
IN
Input CurrentV
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
V
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
DD
e
V
DD
e
5V, V
10V, V
15V, V
IN
IN
IN
VDDor V
e
e
5V0.0500.050.05V
10VlI
O
15V (0.0500.050.05V
5V4.954.9554.95V
10VlI
O
15V (14.9514.951514.95V
e
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
5V, V
10V, V
15V, V
15V, V
15V, V
4.5V1.521.51.5V
O
e
O
e
O
e
0.5V3.53.533.5V
O
e
O
e
O
e
0.4V0.520.440.880.36mA
O
e
O
e
O
e
4.6V
O
e
O
e
O
e
IN
e
IN
SS
VDDor V
SS
VDDor V
SS
k
1 mA0.0500.050.05V
l
k
1 mA9.959.95109.95V
l
9.0V3.043.03.0V
13.5V4.064.04.0V
1.0V7.07.067.0V
1.5V11.011.0911.0V
0.5V1.31.12.250.9mA
1.5V3.63.08.82.4mA
9.5V
13.5V
0V
15V0.3010
40§C
MinMaxMinTypMaxMinMax
10.00417.5mA
20.005215mA
40.006430mA
b
0.52
b
1.3
b
3.6
b
0.30
b
0.44b0.88
b
1.1b2.25
b
3.0b8.8
b
a
25§C
b
5
b
10
0.30
b
5
0.301.0mA
a
85§C
b
0.36mA
b
0.9mA
b
2.4mA
b
1.0mA
Units
AC Electrical Characteristics* CD4001BC, CD4001BM
e
T
25§C, Input tr;t
A
e
f
20 ns. C
L
e
50 pF, R
e
200k. Typical temperature coefficient is 0.3%/§C.
L
SymbolParameterConditionsTypMaxUnits
t
PHL
t
PLH
t
THL,tTLH
C
IN
C
PD
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: All voltages measured with respect to V
Note 3: I
and IOHare tested one output at a time.
OL
Propagation Delay Time,V
High-to-Low LevelV
Propagation Delay Time,V
Low-to-High LevelV
Transition TimeV
Average Input CapacitanceAny Input57.5pF
Power Dissipation CapacityAny Gate14pF
unless otherwise specified.
SS
e
5V120250ns
DD
e
10V50100ns
DD
e
V
15V3570ns
DD
e
5V110250ns
DD
e
10V50100ns
DD
e
V
15V3570ns
DD
e
5V90200ns
DD
e
V
10V50100ns
DD
e
V
15V4080ns
DD
3
Page 4
AC Electrical Characteristics* CD4011BC, CD4011BM
e
T
25§C, Input tr;t
A
e
f
20 ns. C
L
e
50 pF, R
e
200k. Typical Temperature Coefficient is 0.3%/§C.
L
SymbolParameterConditionsTypMaxUnits
t
PHL
t
PLH
t
THL,tTLH
C
IN
C
PD
*AC Parameters are guaranteed by DC correlated testing.
Propagation Delay,V
High-to-Low LevelV
Propagation Delay,V
Low-to-High LevelV
Transition TimeV
Average Input CapacitanceAny Input57.5pF
Power Dissipation CapacityAny Gate14pF
e
5V120250ns
DD
e
10V50100ns
DD
e
V
15V3570ns
DD
e
5V85250ns
DD
e
10V40100ns
DD
e
V
15V3070ns
DD
e
5V90200ns
DD
e
V
10V50100ns
DD
e
V
15V4080ns
DD
Typical Performance Characteristics
Typical
Transfer Characteristics
TL/F/5939– 7
Typical
Transfer Characteristics
TL/F/5939– 10
Typical
Transfer Characteristics
TL/F/5939– 8
TL/F/5939– 11
FIGURE 5
Typical
Transfer Characteristics
TL/F/5939– 9
TL/F/5939– 12
FIGURE 6
4
Page 5
Typical Performance Characteristics (Continued)
FIGURE 7
FIGURE 10
TL/F/5939– 13
TL/F/5939– 16
FIGURE 8
FIGURE 11
TL/F/5939– 14
TL/F/5939– 17
FIGURE 9
TL/F/5939– 15
TL/F/5939– 18
FIGURE 12
FIGURE 13
TL/F/5939– 19
FIGURE 14
TL/F/5939– 20
5
Page 6
Physical Dimensions inches (millimeters)
Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ
Ceramic Dual-In-Line Package (J)
NS Package Number J14A
Molded Dual-In-Line Package (N)
Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN
CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate
NS Package Number N14A
CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or2. A critical component is any component of a life
systems which, (a) are intended for surgical implantsupport device or system whose failure to perform can
into the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the life
failure to perform, when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, caneffectiveness.
be reasonably expected to result in a significant injury
to the user.
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