NAIS AQV414SZ, AQV414SX Datasheet

66

1

2
3

6
5
4

GU (General Use) Type
SOP Series
[1-Channel (Form B) Type]

mm inch

6.3±0.2

.248±.008

4.4±0.2

.173±.008

2.1±0.2

.083±.008

FEATURES

1. 1 channel (Form B) in super minia­ture design

The device comes in a super-miniature
SO package measuring (W) 4.4 × (L) 6.3

×

(H) 2.1 mm (W) .173 × (L) .248 × (H) .083

inch —approx. 25% of the volume and

50% of the footprint size of DIP type Pho­toMOS Relays.

Volume

(SOP)(DIP)

Approx. 25%

Footprint

Approx. 50%

2. Low on resistance (Max. 50 Ω ) at 400
V for normally-closed type

has been achieved thanks to the built-in
MOSFET processed by our proprietary
method, DSD (Double-Diffused and Se­lective Doping) method.







Source electrode

N

–

N

+

N+N

+

P

+

N+N

+

P

+

Gate electrode

Passivation membrane

Cross section of the normally-closed type of
power MOS

Intermediate
insulating
membrane

Gate
oxidation
membrane

Drain
electrode

3. Tape and reel

The device comes standard in a tape and
reel (1,000 pcs./reel) to facilitate automat­ic insertion machines.

4. Controls low-level analog signals

PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.

5. Low-level off state leakage current

In contrast to the SSR with an off state
leakage current of several milliamps, the
PhotoMOS relay features a v ery small off
state leakage current of only 100 pA even
at the rated load voltage of 400 V.

6. Low thermal electromotive force
(Approx. 1 µ V)

TYPICAL APPLICATIONS

• T elephones

• Measuring instruments

• Computer

• Industrial robots

• High-speed inspection machines

TYPES

*Indicate the peak AC and DC values.
Notes: (1) Tape package is the standard packing style. Also available in tube. (Part No. suffix "X" ro "Z" is not needed when ordering; Tube: 75 pcs.;

Case: 1,500 pcs.)

(2) For space reasons, the top two letters of the product number "AQ" are ommitted on the product seal. The package type indicator "X" and "Z"

are also omitted from the seal. (Ex. the label for product number AQV414S is V414S).

Type

Output ratings* Part No.

Packing quantity in

tape and reel

Load voltage Load current Picked from the 1/2/3-pin side Picked from the 4/5/6-pin side

AC/DC 400 V 100 mA AQV414SX AQV414SZ 1,000 pcs.

RATING

1. Absolute maximum ratings (Ambient temperature: 25 ° C 77 ° F)

Item Symbol

Type of

connection

AQV414S Remarks

Input

LED forward current I

F

50 mA

LED reverse voltage V

R

3 V

Peak forward current I

FP

1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation P

in

75 mW

Output

Load voltage (peak AC) V

L

400 V

Continuous load current I

L

A 0.10 A

A connection: Peak AC, DC
B,C connection: DC

B 0.11 A
C 0.12 A

Peak load current I

peak

0.3 A A connection: 100 ms (1 shot) V

L

= DC

Power dissipation P

out

450 mW

Total power dissipation P

T

500 mW

I/O isolation voltage V

iso

1,500 V AC

T emperature
limits

Operating T

opr

–40 ° C to +85 ° C –40 ° F to +185 ° F Non-condensing at low temperatures

Storage T

stg

–40 ° C to +100 ° C –40 ° F to +212 ° F

PhotoMOS
RELAYS

AQV414S

67

2. Electrical characteristics (Ambient temperature: 25 ° C 77 ° F)

Note: Recommendable LED forward current I

F

= 5mA.

For type of connection, see page 32.

*Turn on/Turn off time

■

For Dimensions, see Page 28.

■

For Schematic and Wiring Diagrams, see Page 32.

■

For Cautions for Use, see Page 36.

Item Symbol

Type of

connec-

tion

AQV414S Remarks

Input

LED operate current

Typical

I

Fon

—

0.6 mA
I

L

= Max.

Maximum 3 mA

LED turn off current

Minimum

I

Foff

—

0.4 mA
I

L

= Max.

Typical 0.55 mA

LED dropout voltage

Typical

V

F

—

1.14 V (1.25 V at I

F

= 50 mA)

I

F

= 5 mA

Maximum 1.5 V

Output

On resistance

Typical

R

on

A

26 Ω

I

F

= 5 mA

I

L

= Max.

Within 1 s on time

Maximum 50 Ω
Typical

R

on

B

20 Ω

I

F

= 5 mA

I

L

= Max.

Within 1 s on time

Maximum 25 Ω
Typical

R

on

C

10 Ω

I

F

= 5 mA

I

L

= Max.

Within 1 s on time

Maximum 12.5 Ω

Off state leakage current Maximum I

Leak

—1

µ A

I

F

= 0

V

L

= Max.

Transfer
characteristics

Turn on time*

Typical

T

on

—

0.47 ms

I

F

= 5 mA

V

L

= Max.

Maximum 1.0 ms

Turn off time

Typical

T

off

—

0.28 ms

I

F

= 5 mA

V

L

= Max.

Maximum 1.0 ms

I/O capacitance

Typical

C

iso

—

0.8 pF

f = 1 MHz
V

B

= 0

Maximum 1.5 pF

Initial I/C isolation resistance Minimum R

iso

— 1,000 M Ω

500 V DC

Toff

Input

Output

10%

90%

Ton

REFERENCE DATA

1. Load current vs. ambient temperature char­acteristics

Allowable ambient temperature: –40 ° C to +85 ° C

–40 ° F to +185 ° F

Type of connection: A

2. On resistance vs. ambient temperature char­acteristics

Measured portion: between terminals 4 and 6;
LED current: 0 mA;
Continuous load current: 100 mA (DC)

3. Operate (OFF) time vs . ambient temper ature
characteristics

LED current: 5 mA;
Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC)

–40 –20 8085100

120

100

80

60

40

20

0

140

0 20 40 60 100

120

100

80

60

40

20

0

140

Load current, mA

Ambient temperature, °C

02040608085

50

40

30

20

10

0

–40 –20

On resistance, Ω

Ambient temperature, °C

0–40 –20 20 40 60 8085

1.0

0.8

0.6

0.4

0.2

0

Operate (OFF) time, ms

Ambient temperature, °C