69
1
2
3
6
5
4
GU (General Use) Type
[1-Channel (Form B) Type]
mm inch
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.9±0.2
.154±.008
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.6±0.2
.142±.008
FEATURES
1. Low on resistance for normallyclosed type
This has been realized thanks to the builtin MOSFET processed by our proprietary
method, DSD (Double-diffused and Selective Doping) method.
Source electrode
N
–
N
+
N+N
+
P
+
N+N
+
P
+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.15 A load current with a 5 mA input current.
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes , whereas the PhotoMOS relay has only 100 pA even with
the rated load voltage of 400 V.
TYPICAL APPLICATIONS
• Telepone equipment (Dial pulse)
• Measuring equipment
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
type
1,500 V AC 400 V 120 mA AQV414 AQV414A AQV414AX AQV414AZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
RATING
1. Absolute maximum ratings (Ambient temperature: 25 ° C 77 ° F)
Item Symbol
Type of
connec-
tion
AQV414(A) Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forwrd current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
400 V
Continuous load current I
L
A 0.12 A
A connection: Peak AC, DC
B,C connection: DC
B 0.13 A
C 0.15 A
Peak load current I
peak
0.3 A A connection: 100 ms (1 shot), V
L
= DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
1,500 V AC
T emperature
limits
Operating T
opr
–40 ° C to +85 ° C –40 ° F to +185 ° F Non-condensing at low temperatures
Storage T
stg
–40 ° C to +100 ° C –40 ° F to +212 ° F
PhotoMOS
RELAYS