MXIC MX28F2000PTC-70C4, MX28F2000PTC-90C4, MX28F2000PPC-12C4, MX28F2000PPC-70C4, MX28F2000PPC-90C4 Datasheet

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FEATURES

MX28F2000P

2M-BIT [256K x 8] CMOS FLASH MEMORY

• 262,144 bytes by 8-bit organization

• Fast access time: 70/90/120 ns

• Low power consumption – 50mA maximum active current – 100uA maximum standby current

• Programming and erasing voltage 12V ± 5%

• Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical

(including preprogramming time)

– Block Erase

• Optimized high density blocked architecture – Four 4-KB blocks (Top) – Fourteen 16-KB blocks – Four 4-KB blocks (Bottom)

GENERAL DESCRIPTION

The MX28F2000P is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000P is packaged in 32-pin PDIP, PLCC and TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

The standard MX28F2000P offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000P has separate chip enable (CE) and output enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2000P uses a command register to manage this functionality, while maintaining a standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

• Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit

• 10,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Advanced CMOS Flash memory technology

• Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts

• Package type: – 32-pin plastic DIP – 32-pin PLCC – 32-pin TSOP (Type 1)

MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX28F2000P uses a 12.0V ± 5% VPP supply to perform the Auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

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MX28F2000P Block Address and Block Structure

MX28F2000P

A17~A0

3FFFFH

3F000H

3EFFFH

3E000H

3DFFFH

3D000H

3CFFFH

3C000H

3BFFFH

38000H

37FFFH

34000H

33FFFH

30000H

2FFFFH

2C000H 2BFFFH

28000H 27FFFH

24000H 23FFFH

20000H

1FFFFH 1C000H

1BFFFH

18000H 17FFFH

14000H 13FFFH

10000H

0FFFFH 0C000H

0BFFFH

08000H 07FFFH

04000H 03FFFH

03000H 02FFFH

02000H 01FFFH

01000H 00FFFH

00000H

4-K byte 4-K byte

4-K byte 4-K byte 16-K byte

16-K byte

4-K byte

4-K byte 4-K byte

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PIN CONFIGURATIONS

A11

A8 A13 A14 A17

VCC

VPP

A16 A15 A12

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

OE A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 A3

32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17

MX28F2000P

32 PDIP

32 PLCC

VPP

A16

A15

A12

GND

A12

A15

A7 A6 A5 A4

MX28F2000P

A3 A2 A1 A0

14 17 20

MX28F2000P

A16

VPP

VCCWEA17

TSOP (TYPE 1)

VCC

A17

A14

A13

A11

A10

(NORMAL TYPE)

CE Q7 Q6 Q5 Q4 Q3

Q2 Q1 Q0

31 30 29 28 27 26 25 24 23 22 21 20

MX28F2000P

A10

A14 A13 A8 A9

A11 OE A10 CE

GND

A11

A13

A14

A17

VCC

VPP

A16

A15

A12

Q3Q4Q5

VSS

(REVERSE TYPE)

PIN DESCRIPTION:

SYMBOL PIN NAME

A0~A17 Address Input Q0~Q7 Data Input/Output CE Chip Enable Input OE Output Enable Input WE Write enable Pin

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VPP Program Supply Voltage VCC Power Supply Pin (+5V) GND Ground Pin

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BLOCK DIAGRAM

MX28F2000P

A0-A17

CONTROL INPUT

LOGIC

ADDRESS

LATCH

AND

BUFFER

PROGRAM/ERASE

HIGH VOLTAGE

X-DECODER

MX28F2000P

FLASH ARRA Y

Y-DECODER

Y-PASS GATE

SENSE

AMPLIFIER

PGM

DATA

PROGRAM

DATA LATCH

ARRAY

SOURCE

MODE LOGIC

STATE

COMMAND

DATA DECODER

COMMAND

DATA LATCH

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Q0-Q7

I/O BUFFER

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MX28F2000P

AUTOMATIC PROGRAMMING

The MX28F2000P is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm does not require the system to time out or verify the data programmed. The typical room temperature chip programming time of the MX28F2000P is less than 5 seconds.

AUTOMATIC CHIP ERASE

The device may be erased using the Automatic Erase algorithm. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internal to the device.

AUTOMATIC BLOCK ERASE

The MX28F2000P is block(s) erasable using MXIC's Auto Block Erase algorithm. Block erase modes allow blocks of the array to be erased in one erase cycle. The Automatic Block Erase algorithm automatically programs the specified block(s) prior to electrical erase. The timing and verification of electrical erase are controlled internal to the device.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm requires the user to only write a program set-up command and a program command (program data and address). The device automatically times the programming pulse width, provides the program verify, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to only write an erase set-up command and erase command. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verify, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the erase operation.

Commands are written to the command register using standard microprocessor write timings. Register contents serve as inputs to an internal state-machine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. For system design simplification, the MX28F2000P is designed to support either WE or CE controlled writes. During a system write cycle, addresses are latched on the falling edge of WE or CE whichever occurs last. Data is latched on the rising edge of WE or CE whichever occur first. To simplify the following discussion, the WE pin is used as the write cycle control pin throughout the rest of this text. All setup and hold times are with respect to the WE signal.

MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX28F2000P electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.

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MX28F2000P

TABLE 1. COMMAND DEFINITIONS

COMMAND BUS FIRST BUS CYCLE SECOND BUS CYCLE

CYCLES OPERATION ADDRESS DATA OPERATION ADDRESS DATA

Read Memory 1 Write X 00H Read Identified codes 2 Write X 90H Read IA ID Setup auto erase/ 2 Write X 30H Write X 30H

auto erase (chip) Setup auto erase/ 2 Write X 20H Write EA D0H

auto erase (block)

Setup auto program/ 2 Write X 40H Write PA PD program

Setup Erase/ 2 Write X 20H Write X 20H Erase (chip)

Setup Erase/ 2 Write X 60H Write EA 60H Erase (block)

Erase verify 2 Write EVA A0H Read X EVD Reset 2 Write X FFH Write X FFH

Note:

IA = Identifier address EA = Block of memory location to be erased PA = Address of memory location to be pro-

grammed

ID = Data read from location IA during device iden-

tification PD = Data to be programmed at location PA EVA = Address of memory location to be read during

erase verify. EVD = Data read from location EVA during erase

verify.

Auto modes have the build-in enchanced features. Please use the auto erase mode whenever it is.

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MX28F2000P

COMMAND DEFINITIONS

When low voltage is applied to the VPP pin, the contents of the command register default to 00H, enabling read-only operation.

Placing high voltage on the VPP pin enables read/write operations. Device operations are selected by writing specific data patterns into the command register. Table 1 defines these MX28F2000P register commands. Table 2 defines the bus operations of MX28F2000P.

TABLE 2. MX28F2000P BUS OPERATIONS

OPERATION VPP(1) A0 A9 CE OE WE DQ0-DQ7 READ-ONLY Read VPPL A0 A9 VIL VIL VIH Data Out

Output Disable VPPL X X VIL VIH VIH Tri-State Standby VPPL X X VIH X X Tri-State Read Silicon ID (Mfr)(2) VPPL VIL VID(3) VIL VIL VIH Data = C2H Read Silicon ID (Device)(2) VPPL VIH VID(3) VIL VIL VIH Data = 2AH

READ/WRITE Read VPPH A0 A9 VIL VIL VIH Data Out(4)

Standby(5) VPPH X X VIH X X Tri-State Write VPPH A0 A9 VIL VIH VIL Data In(6)

NOTES:

1. VPPL may be grounded, a no-connect with a resistor tied

to ground, or < VCC + 2.0V. VPPH is the programming voltage specified for the device. When VPP = VPPL, memory contents can be read but not written or erased.

2. Manufacturer and device codes may also be accessed

via a command register write sequence. Refer to Table

1. All other addresses don't care.

3. VID is the Silicon-ID-Read high voltage.(11.5V to 13v)

4. Read operations with VPP = VPPH may access array data or Silicon ID codes.

5. With VPP at high voltage, the standby current equals ICC + IPP (standby).

6. Refer to Table 1 for valid Data-In during a write operation.

7. X can be VIL or VIH.

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MX28F2000P

READ COMMAND

While VPP is high, for erasure and programming, memory contents can also be accessed via the read command. The read operation is initiated by writing 00H into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered.

The default contents of the register upon VPP powerup is 00H. This default value ensures that no spurious alteration of memory contents occurs during the VPP power transition. Where the VPP supply is hard-wired to the MX28F2000P, the device powers up and remains enabled for reads until the command register contents are changed.

SILICON-ID-READ COMMAND

Flash-memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer- and device-codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto address lines is not a desired systemdesign practice.

contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are complete when the data on DQ7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations.

When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verify command is required). The margin voltages are internally generated in the same manner as when the standard erase verify command is used.

The Automatic set-up erase command is a commandonly operation that stages the device for automatic electrical erasure of all bytes in the array. Automatic set-up erase is performed by writing 30H to the command register.

To command automatic chip erase, the command 30H must be written again to the command register. The automatic chip erase begins on the rising edge of the WE and terminates when the data on DQ7 is "1" and the data on DQ6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode.

The MX28F2000P contains a Silicon-ID-Read operation to supplement traditional PROM-programming methodology. The operation is initiated by writing 90H into the command register. Following the command write, a read cycle from address 0000H retrieves the manufacturer code of C2H. A read cycle from address 0001H returns the device code of 2AH.

SET-UP AUTOMATIC CHIP ERASE/ERASE COMMANDS

The automatic chip erase does not require the device to be entirely pre-programmed prior to excuting the Automatic set-up erase command and Automatic chip erase command. Upon executing the Automatic chip erase command, the device automatically will program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to

SET-UP AUTOMATIC BLOCK ERASE/ERASE COMMANDS

The automatic block erase does not require the device to be entirely pre-programmed prior to executing the Automatic set-up block erase command and Automatic block erase command. Upon executing the Automatic block erase command, the device automatically will program and verify the block(s) memory for an all-zero data pattern. The system is not required to provide any controls or timing during these operations.

When the block(s) is automatically verified to contain an all-zero pattern, a self-timed block erase and verify begin. The erase and verify operations are complete when the data on DQ7 is "1" and the data on DQ6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations.

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MX28F2000P

When using the Automatic Block Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verify command is required). The margin voltages are internally generated in the same manner as when the standard erase verify command is used.

The Automatic set-up block erase command is a command only operation that stages the device for automatic electrical erasure of selected blocks in the array. Automatic set-up block erase is performed by writing 20H to the command register.

To enter automatic block erase, the user must write the command D0H to the command register. Block addresses are loaded into internal register on the 2nd falling edge of WE. Each successive block load cycles, started by the falling edge of WE, must begin within 30us from the rising edge of the preceding WE. Otherwise, the loading period ends and internal auto block erase cycle starts. When the data on DQ7 is "1" and the data on DQ6 stops toggling for two consecutive read cycles, at which time auto erase ends and the device returns to the Read mode.

Refer to page 2 for detailed block address.

SET-UP AUTOMATIC PROGRAM/PROGRAM COMMANDS

RESET COMMAND

A reset command is provided as a means to safely abort the erase- or program-command sequences. Following either set-up command (erase or program) with two consecutive writes of FFH will safely abort the operation. Memory contents will not be altered. Should program-fail or erase-fail happen, two consecutive writes of FFH will reset the device to abort the operation. A valid command must then be written to place the device in the desired state.

WRITE OPERATON STATUS

TOGGLE BIT-DQ6

The MX28F2000P features a "Toggle Bit" as a method to indicate to the host sytem that the Auto Program/ Erase algorithms are either in progress or completed.

While the Automatic Program or Erase algorithm is in progress, successive attempts to read data from the device will result in DQ6 toggling between one and zero. Once the Automatic Program or Erase algorithm is completed, DQ6 will stop toggling and valid data will be read. The toggle bit is valid after the rising edge of the second WE pulse of the two write pulse sequences.

The Automatic Set-up Program is a command-only operation that stages the device for automatic programming. Automatic Set-up Program is performed by writing 40H to the command register.

Once the Automatic Set-up Program operation is performed, the next WE pulse causes a transition to an active programming operation. Addresses are internally latched on the falling edge of the WE pulse. Data is internally latched on the rising edge of the WE pulse. The rising edge of WE also begins the programming operation. The system is not required to provide further controls or timings. The device will automatically provide an adequate internally generated program pulse and verify margin. The automatic programming operation is completed when the data read on DQ6 stops toggling for two consecutive read cycles and the data on DQ7 and DQ6 are equivalent to data written to these two bits, at which time the device returns to the Read mode (no program verify command is required).

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DATA POLLING-DQ7

The MX28F2000P also features Data Polling as a method to indicate to the host system that the Automatic Program or Erase algorithms are either in progress or completed.

While the Automatic Programming algorithm is in operation, an attempt to read the device will produce the complement data of the data last written to DQ7. Upon completion of the Automatic Program algorithm an attempt to read the device will produce the true data last written to DQ7. The Data Polling feature is valid after the rising edge of the second WE pulse of the two write pulse sequences.

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While the Automatic Erase algorithm is in operation, DQ7 will read "0" until the erase operation is completed. Upon completion of the erase operation, the data on DQ7 will read "1". The Data Polling feature is valid after the rising edge of the second WE pulse of two write pulse sequences.

The Data Polling feature is active during Automatic Program/Erase algorithms.

POWER-UP SEQUENCE

The MX28F2000P powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of a two-step command sequence. Power up sequence is not required.

SYSTEM CONSIDERATIONS

MX28F2000P

During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1uF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and GND, and between VPP and GND to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on FLASH memory arrays, a 4.7uF bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.

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