Motorola PZT2222AT1, PZT2222AT3 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
 

This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.

• PNP Complement is PZT2907AT1

• The SOT-223 package can be soldered using wave or reflow.

• SOT-223 package ensures level mounting, resulting in improved thermal

conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.

• Available in 12 mm tape and reel

Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V

CEO

40 Vdc

Collector-Base Voltage V

CBO

75 Vdc

Emitter-Base Voltage (Open Collector) V

EBO

6.0 Vdc

Collector Current I

C

600 mAdc

Total Power Dissipation up to TA = 25°C

(1)

P

D

1.5 Watts

Storage Temperature Range° T

stg

– 65 to +150 °C

Junction Temperature° T

J

150 °C

THERMAL CHARACTERISTICS

Thermal Resistance from Junction to Ambient R

θJA

83.3 °C/W

Lead Temperature for Soldering, 0.0625″ from case

Time in Solder Bath

T

L

260

10

°C

Sec

DEVICE MARKING

P1F

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V

(BR)CEO

40 — Vdc

Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V

(BR)CBO

°75° °—° Vdc

Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V

(BR)EBO

6.0 — Vdc

Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) I

BEX

— 20 nAdc

Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) I

CEX

— 10 nAdc

Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) I

EBO

— 100 nAdc

1. Device mounted on an epoxy printed circuit board 1.575 inches x 1 .575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by PZT2222AT1/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1996

BASE

1

COLLECTOR

2, 4

3

EMITTER



SOT-223 PACKAGE

NPN SILICON
TRANSISTOR

SURFACE MOUNT

Motorola Preferred Device

CASE 318E-04, STYLE 1

TO-261AA

1

2

3

4

REV 2

PZT2222AT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS — continued

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS (continued)

Collector-Base Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)

I

CBO

—
—

10
10

nAdc
µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = – 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)

h

FE

35
50
70
35

100

50
40

—
—
—
—

300

—
—

—

Collector-Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

V

CE(sat)

—
—

0.3

1.0

Vdc

Base-Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

V

BE(sat)

0.6
—

1.2

2.0

Vdc

Input Impedance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hie°

2.0

0.25

8.0

1.25

kΩ

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

h

re

—
—

8.0x10

-4

4.0x10

-4

—

Small-Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

ť

hfeť

50
75

300
375

—

Output Admittance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hoe°

5.0
25

35

200

µmhos

Noise Figure (VCE = 10 Vdc, IC = 100 µAdc, f = 1.0 kHz) F — 4.0 dB

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

f

T

300 — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

c

— 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

C

e

— 25 pF

SWITCHING TIMES (T

A

= 25°C)

Delay Time

t

d

— 10 ns

Rise Time

I

B(on)

= 15 mAdc, V

EB(off)

= 0.5 Vdc)

Figure 1

t

r

— 25

Storage Time

t

s

— 225 ns

Fall Time

I

B(on)

= I

B(off)

= 15 mAdc)

Figure 2

t

f

— 60

(VCC = 30 Vdc, IC = 150 mAdc,

(VCC = 30 Vdc, IC = 150 mAdc,