MOTOROLA P2N2222ARL1, P2N2222AZL1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
75 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V
(BR)CEO
40 — Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V
(BR)CBO
75 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(VCE = 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
CEX
— 10 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
I
CBO
—
—
0.01
10
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
I
EBO
— 10 nAdc
Collector Cutoff Current
(VCE = 10 V)
I
CEO
— 10 nAdc
Base Cutoff Current
(VCE = 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
BEX
— 20 nAdc
Order this document
by P2N2222A/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(1)
(IC = 500 mAdc, VCE = 10 Vdc)
(1)
h
FE
35
50
75
35
100
50
40
—
—
—
—
300
—
—
—
Collector–Emitter Saturation Voltage
(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
V
CE(sat)
—
—
0.3
1.0
Vdc
Base–Emitter Saturation Voltage
(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
V
BE(sat)
0.6
—
1.2
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
f
T
300 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 25 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
re
—
—
8.0
4.0
X 10
–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
fe
50
75
300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
h
oe
5.0
25
35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb′C
c
— 150 ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
N
F
— 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= –2.0 Vdc,
t
d
— 10 ns
Rise Time
(VCC = 30 Vdc, V
BE(off)
= –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
t
r
— 25 ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
t
s
— 225 ns
Fall Time
IB1 = IB2 = 15 mAdc) (Figure 2)
t
f
— 60 ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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