Motorola MTW35N15E Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

Specified at Elevated Temperature

DS(on)

• Isolated Mounting Hole Reduces Mounting Hardware

G



D

S



Motorola Preferred Device

TMOS POWER FET

35 AMPERES

150 VOLTS

R

CASE 340K–01, Style 1

DS(on)

TO–247AE

= 0.05 OHM

MAXIMUM RATINGS

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)

Drain Current — Continuous

Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)

Total Power Dissipation

Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

(TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

150 Vdc
150 Vdc

± 20
± 40

35

26.9
105

180

1.45

–55 to 150 °C

600 mJ

0.70

62.5
260 °C

Vdc
Vpk

Adc

Apk

Watts

W/°C

°C/W

V

V

I

E

R
R

DSS

DGR

GS

GSM

I

D

I

D

DM
P

D

stg

AS

θJC
θJA

L

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1996

1

MTW35N15E

)

f = 1.0 MHz)

V

G

)

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

T emperature Coef ficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 17.5 Adc) R
Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 35 Adc)

(ID = 17.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 17.5 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

(See Figure 8)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

Reverse Recovery Time

(See Figure 14)

Reverse Recovery Stored Charge Q

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(T

= 25°C unless otherwise noted)

J

Characteristic

(VDS = 25 Vdc, VGS = 0 Vdc,

(VDS = 120 Vdc, ID = 35 Adc,

(IS = 35 Adc, VGS = 0 Vdc, TJ = 125°C)

f = 1.0 MHz

(VDD = 75 Vdc, ID = 35 Adc,

(IS = 35 Adc, VGS = 0 Vdc)

(IS = 35 Adc, VGS = 0 Vdc,

= 10 Vdc,

GS

RG = 9.1 Ω)

VGS = 10 Vdc)

dIS/dt = 100 A/µs)

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

DS(on)

V

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

T

Q

1

Q

2

Q

3

V

SD

t

rr

t

a

t

b

RR

L

D

L

S

150

—

—
—

— — 100 nAdc

2.0
—

— — 0.05 Ohm

—
—

11 18 — mhos

— 3600 5040 pF
— 855 1170
— 165 330

— 28 56 ns
— 170 346
— 90 180
— 103 210
— 98 137 nC
— 19 —
— 49 —
— 40 —

—
—

— 200 —
— 167 —
— 32 —
— 1.63 — µC

— 4.5 — nH

— 13 — nH

—

210

—
—

—

7.0

1.45
—

0.95

0.9

—
—

10

100

4.0
—

1.8

1.7

1.5
—

mV/°C

mV/°C

Vdc

µAdc

Vdc

Vdc

Vdc

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MTW35N15E

70

TJ = 25°C

60

50

40

30

, DRAIN CURRENT (AMPS)

D

I

10

0

0 4.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

VGS = 10 V

9.0 V

2.01.0 3.0

8.0 V

7.0 V

6.0 V

5.0 V

3.52.51.50.5 5.03.0

Figure 1. On–Region Characteristics

0.09
VGS = 10 V

0.08

0.07

0.06

0.05

0.04

0.03

, DRAIN-TO-SOURCE RESIST ANCE (OHMS)

0.02

0.01

DS(on)

R

05070

ID, DRAIN CURRENT (AMPS)

TJ = 100°C

25°C

–55°C

4030

70

VDS ≥ 10 V

60

50

40

30

, DRAIN CURRENT (AMPS)

2020

D

I

10

0

2.0 4.0 6.0 8.0
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.047

0.045

0.043

0.041

0.039

, DRAIN-TO-SOURCE RESIST ANCE (OHMS)

0.037

DS(on)

0.035

R

TJ = 25°C

05070

10

20 30 40 6020 6010

ID, DRAIN CURRENT (AMPS)

100°C

VGS = 10 V

15 V

25°C

TJ = –55°C

7.0

Figure 3. On–Resistance versus Drain Current

and T emperature

2.5
VGS = 10 V

ID = 17.5 A

2.0

1.5

1.0

(NORMALIZED)

, DRAIN-TO-SOURCE RESIST ANCE

0.5

DS(on)

R

0

–50

– 25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1000

, LEAKAGE (nA)

DSS

I

VGS = 0 V

100

10

1.0

0.1
0 50 150

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

TJ = 125°C

100°C

25°C

100

Figure 6. Drain–T o–Source Leakage

Current versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data

3