Motorola MTW32N20E Datasheet
SEMICONDUCTOR TECHNICAL DATA
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N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
32 AMPERES
200 VOL TS
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
R
DS(on)
= 0.075 OHM
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
D
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
• Isolated Mounting Hole
(T
MAXIMUM RATINGS
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage — Continuous V
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.58 mH, RG = 25 Ω )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Sil Pad is a trademark of the Bergquist Company
= 25°C unless otherwise noted)
C
Rating
G
S
Symbol Value Unit
DSS
DGR
GS
I
D
I
D
I
DM
P
D
E
AS
R
θJC
R
θJA
L
CASE 340K–01, Style 1
± 20 Vdc
1.44
stg
–55 to 150 °C
TO–247AE
200 Vdc
200 Vdc
32
19
128
180
810 mJ
0.7
40
260 °C
Adc
Apk
Watts
W/°C
°C/W
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW32N20E
)
f = 1.0 MHz)
V
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250 µAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0)
(VDS = 200 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
T emperature Coef ficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc) R
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 32 Adc)
(ID = 16 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*✝
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
✝Switching characteristics are independent of operating junction temperature.
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDD = 100 Vdc, ID = 32 Adc,
(VDS = 160 Vdc, ID = 32 Adc,
(IS = 16 Adc, VGS = 0, TJ = 125°C)
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz
= 10 Vdc,
GS
RG = 6.2 Ω)
VGS = 10 Vdc)
(IS = 32 Adc, VGS = 0)
(IS = 32 Adc, VGS = 0,
dIS/dt = 100 A/µs)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
200
—
—
—
— — 100 nAdc
2.0
—
— 0.064 0.075 Ohm
—
—
12 — — mhos
— 3600 5000 pF
— 130 250
— 690 1000
— 25 50 ns
— 120 240
— 75 150
— 91 182
— 85 120 nC
— 12 —
— 40 —
— 30 —
—
—
— 280 —
— 195 —
— 85 —
— 2.94 — µC
— 5.0 — nH
— 13 — nH
—
247
—
—
—
8.0
—
—
1.1
0.9
—
—
250
1000
4.0
—
3.0
2.7
2.0
—
mV/°C
mV/°C
Vdc
µAdc
Vdc
Vdc
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
YPICAL ELECTRICAL CHARACTERISTICS
MTW32N20E
100
80
60
40
, DRAIN CURRENT (AMPS)
D
I
20
0
0.16
0.14
0.12
0.1
0.08
0.06
0.04
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.02
TJ = 25°C
0
246810
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 1. On–Region Characteristics
VGS = 10 V
T
= 100°C
J
25°C
–55°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
50
40
30
20
, DRAIN CURRENT (AMPS)
D
I
10
0
0246810
VDS ≥ 10 V
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
TJ = –55°C
100°C
25°C
Figure 2. Transfer Characteristics
0.1
T
= 25°C
J
0.09
0.08
0.07
0.06
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
VGS = 10 V
15 V
0
DS(on)
R
0
816 3240 5664
24 48
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and T emperature
2.5
VGS = 10 V
ID = 16 A
2
1.5
(NORMALIZED)
1
, DRAIN–TO–SOURCE RESIST ANCE
DS(on)
R
0.5
–25 0 25 50 75 100 125 150
–50
TJ, JUNCTION TEMPERATURE (
Figure 5. On–Resistance Variation with
Temperature
0.05
DS(on)
R
0
81624324048
ID, DRAIN CURRENT (AMPS)
56 64
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10000
VGS = 0 V
2000
1000
200
, LEAKAGE (mA)
100
DSS
I
°
C)
TJ = 125°C
100°C
20
10
0 50 100 150 200
25°C
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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