Motorola MTW26N15E Datasheet
SEMICONDUCTOR TECHNICAL DATA
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N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
26 AMPERES
150 VOLTS
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
R
DS(on)
= 0.095 OHM
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
D
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 26 Apk, L = 2.4 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
G
S
CASE 340K–01, Style 1
TO–247AE
150 Vdc
150 Vdc
± 20
± 40
26
19.4
78
150
1.2
–55 to 150 °C
810 mJ
0.83
62.5
260 °C
V
V
I
E
R
R
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
stg
AS
θJC
θJA
L
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C/W
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW26N15E
)
f = 1.0 MHz)
V
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
T emperature Coef ficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 13 Adc) R
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 26 Adc)
(ID = 13 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 13 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDS = 25 Vdc, VGS = 0 Vdc,
(VDS = 120 Vdc, ID = 26 Adc,
(IS = 26 Adc, VGS = 0 Vdc, TJ = 125°C)
f = 1.0 MHz
(VDD = 75 Vdc, ID = 26 Adc,
(IS = 26 Adc, VGS = 0 Vdc)
(IS = 26 Adc, VGS = 0 Vdc,
= 10 Vdc,
GS
RG = 9.1 Ω)
VGS = 10 Vdc)
dIS/dt = 100 A/µs)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
150
—
—
—
— — 100 nAdc
2.0
—
— 0.078 0.095 Ohm
—
—
7.0 — — mhos
— 1850 2500 pF
— 450 750
— 95 200
— 17 40 ns
— 116 200
— 48 100
— 69 140
— 48 100 nC
— 11 —
— 22 —
— 19 —
—
—
— 198 —
— 118 —
— 80 —
— 1.5 — µC
— 4.5 — nH
— 13 — nH
—
21
—
—
—
7.0
2.2
—
0.98
0.88
—
—
10
100
4.0
—
3.12
2.47
1.47
—
mV/°C
mV/°C
Vdc
µAdc
Vdc
Vdc
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTW26N15E
70
TJ = 25°C
60
50
40
30
, DRAIN CURRENT (AMPS)
20
D
I
10
0
010
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
VGS = 10 V
8.0 V
6.02.0 4.0 8.0
9.0 V
7.0 V
6.0 V
5.0 V
9.07.05.01.0 3.0 5.0 9.03.0
Figure 1. On–Region Characteristics
0.2
VGS = 10 V
0.18
0.16
0.14
0.12
0.1
0.08
0.06
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.04
0.02
DS(on)
R
0 8.0 16 36 52
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
25°C
–55°C
28 4820 4032
90
VDS ≥ 10 V
80
70
60
50
40
30
, DRAIN CURRENT (AMPS)
D
I
20
10
0
2.0 4.0 6.0 10
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.105
0.095
0.09
0.085
0.08
0.075
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.07
0.065
DS(on)
R
TJ = 25°C
0.1
VGS = 10 V
15 V
515253545 55
10
20 30 40 5012 24 444.0
ID, DRAIN CURRENT (AMPS)
TJ = –55°C
25°C
100°C
8.07.0
Figure 3. On–Resistance versus Drain Current
and T emperature
2.2
VGS = 10 V
2.0
ID = 13 A
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
, DRAIN–TO–SOURCE RESIST ANCE
0.8
DS(on)
R
0.6
–50
– 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
, LEAKAGE (nA)
DSS
I
VGS = 0 V
100
10
1.0
0 50 150
25 75 100
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
25°C
125
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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