Motorola MTW14N50E Datasheet
SEMICONDUCTOR TECHNICAL DATA
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N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
14 AMPERES
500 VOL TS
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
R
DS(on)
= 0.40 OHM
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Designed to Replace External Zener Transient Suppressor —
Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
D
• Diode is Characterized for Use in Bridge Circuits
• I
MAXIMUM RATINGS
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves —representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
and V
DSS
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage — Continuous V
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — STAR TING TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vpk, IL = 14 Apk, L = 8.8 mH, RG = 25 Ω )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
Specified at Elevated Temperature
DS(on)
(T
= 25°C unless otherwise noted)
C
Rating
G
S
Symbol Value Unit
DSS
DGR
I
DM
P
E
R
R
GS
I
D
I
D
D
AS
θJC
θJA
L
CASE 340K–01, Style 1
1.44
stg
–55 to 150 °C
TO–247AE
500 Vdc
500 Vdc
±20 Vdc
14
9.0
60
180
860 mJ
0.7
40
260 °C
Adc
Apk
Watts
W/°C
°C/W
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTW14N50E
)
f = 1.0 MHz)
V
10 Vd
G
)
(
DS
,
D
,
g
(
S
,
GS
)
SD
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250 µAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0)
(VDS = 500 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc) R
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 14 Adc)
(ID = 7.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 7.0 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*✝
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
✝Switching characteristics are independent of operating junction temperature.
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDD = 250 Vdc, ID = 14 Adc,
(VDS = 400 Vdc, ID = 14 Adc,
(IS = 14 Adc, VGS = 0, TJ = 125°C)
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz
c,
=
GS
RG = 4.7 Ω)
VGS = 10 Vdc)
(IS = 14 Adc, VGS = 0)
(IS = 14 Adc, VGS = 0,
dIS/dt = 100 A/µs, VGS = 0)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
500
—
—
—
— — 100 nAdc
2.0
—
— 0.32 0.40 Ohm
—
—
5.0 — — mhos
— 2510 3510 pF
— 280 392
— 67 94
— 28 60 ns
— 80 160
— 80 160
— 60 120
— 65 85 nC
— 17 —
— 47 —
— 34 —
— 1.0
— 0.9 —
— 390 —
— 245 —
— 145 —
— 5.35 — µC
— 5.0 — nH
— 13 — nH
—
520
—
—
3.2
7.0
—
—
—
—
250
1000
4.0
—
6.7
5.6
1.6 Vdc
mV/°C
mV/°C
Vdc
µAdc
Vdc
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTW14N50E
20
18
TJ = 25°C
16
14
12
10
8
6
, DRAIN CURRENT (AMPS)
D
I
4
2
0
1357 9 024681013579
024 6 810
V
, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
DS
10 V
7 V
6 V
VGS = 5 V
4 V
Figure 1. On–Region Characteristics
1.0
VGS = 10V
0.8
0.6
0.4
0.2
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.0
DS(on)
04 812162024
R
TJ = 100°C
TJ = 25°C
TJ = –55°C
28
ID, DRAIN CURRENT (AMPS)
Figure 3.On–Resistance versus Drain Current
20
18
VDS ≥ 10 V
16
14
12
10
8
6
, DRAIN CURRENT (AMPS)
D
I
4
2
0
TJ = 100°C
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
–55°C
25°C
Figure 2. Transfer Characteristics
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.22
0.20
DS(on)
0481216202428
R
TJ = 25°C
VGS = 10 V
VGS = 15 V
ID, DRAIN CURRENT (AMPS)
Figure 4.On–Resistance versus Drain Current
2.5
2.0
1.5
1.0
(NORMALIZED)
, DRAIN–TO–SOURCE RESIST ANCE
0.5
DS(on)
R
0
–50 0 50 100 150
T
, JUNCTION TEMPERATURE (
J
°
C)
VGS = 10 V
ID = 7 A
Figure 5.On–Resistance Variation
With Temperature
Motorola TMOS Power MOSFET Transistor Device Data
200
100000
20000
10000
2000
1000
, DRAIN-TO-SOURCE LEAKAGE (nA)
DSS
I
200
100
20
10
VGS = 0 V
1000 200 300 400
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 6.Drain–T o–Source Leakage
Current versus Voltage
TJ = 125°C
TJ = 100°C
TJ = 25°C
500
3
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