Motorola MTP60N05HDL Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
Order this document
by MTP60N05HDL/D
Motorola Preferred Device
TMOS POWER FET
60 AMPERES
50 VOLTS
R
D
DS(on)
= 0.014 OHM
G
S
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 Seconds T
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
— Non–Repetitive (tp ≤ 10 ms)
— Junction to Ambient
V
V
I
E
R
R
DSS
DGR
GSM
I
I
DM
P
θJC
θJA
CASE 221A–06, Style 5
GS
D
D
D
stg
AS
L
–55 to 175 °C
TO–220AB
50 Vdc
50 Vdc
± 15
± 20
60
42
180
150
1.0
540 mJ
1.0
62.5
260 °C
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C/W
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MTP60N05HDL
)
f = 1.0 MHz)
(
DD
,
D
,
(
DD
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = –25°C)
Gate–Body Leakage Current
(VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 30 Adc)
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 4.0 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
(VDD = 25 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 Ω)
(VDD = 25 Vdc, ID = 60 Adc,
VGS = 5.0 Vdc, RG = 9.1 W)
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc, TJ = 125°C)
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
f
Q
Q
Q
Q
V
SD
t
rr
t
a
t
b
RR
50
—
—
—
— — 100
1.0
—
— 0.010 0.014
—
—
15 48 —
— 2775 4000 pF
— 750 1070
— 150 300
— 21 40 ns
— 570 1150
— 86 170
— 200 400
T
1
2
3
— 42 62 nC
— 8.0 —
— 24 —
— 17 —
—
—
— 50 —
— 34 —
— 15 —
— 0.085 — µC
—
55
—
—
1.5
4.5
—
—
0.95
0.85
—
—
10
100
2.0
—
1.0
0.75
1.1
—
Vdc
mV/°C
µAdc
nAdc
Vdc
mV/°C
Ohms
Vdc
mhos
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTP60N05HDL
120
VGS = 10 V
100
80
60
40
, DRAIN CURRENT (AMPS)
D
I
20
0
0 1.0 2.0 3.0 4.0 5.00.5 1.5 2.5 3.5 4.5
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS) VGS, GATE–T O–SOURCE VOL TAGE (VOLTS)
4.5 V
6.0 V
5.0 V
4.0 V
8.0 V
TJ = 25°C
3.5 V
3.0 V
2.5 V
120
VDS ≥ 10 V
100
80
60
40
, DRAIN CURRENT (AMPS)
D
I
20
0
1.5 2.0 2.5 4.03.0 3.5
TJ = 125°C
–55°C
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
0.018
0.016
TJ = 100°C
0.014
0.012
25°C
0.010
0.008
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.006
DS(on)
R
0 20 40 60 80 120100 0 20 40 60 80 120100
–55°C
11010 30 50 70 90
ID, DRAIN CURRENT (AMPS)
0.014
0.013
0.012
0.011
0.010
0.009
0.008
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.007
0.006
DS(on)
R
TJ = 25°C
VGS = 5.0 V
10 V
ID, DRAIN CURRENT (AMPS)
25°C
Figure 3. On–Resistance versus Drain Current
and T emperature
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
, DRAIN–TO–SOURCE RESIST ANCE
0.8
DS(on)
R
0.6
VGS = 10 V
ID = 5.0 A
– 50 – 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (
°
C) VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10,000
VGS = 0 V
1000
100
, LEAKAGE (nA)
DSS
I
10
1.0
5.0 10 20 35 40 5030
TJ = 125°C
100°C
25°C
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
4515 25
Motorola TMOS Power MOSFET Transistor Device Data
3
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