Motorola MTDF1C02HD Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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Medium Power Surface Mount Products

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Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commuta tion modes and the drain–to–source diode has a very low reverse recovery time. Micro8  devices are des igned for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape

N–Channel

drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Miniature Micro8 Surface Mount Package — Saves Board Space

• Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

P–Channel

• Diode Exhibits High Speed, With Soft Recovery

• I

• Avalanche Energy Specified

Specified at Elevated Temperature

DSS

• Mounting Information for Micro8 Package Provided

MAXIMUM RATINGS

Negative sign for P–Channel devices omitted for clarity

Drain–to–Source Voltage N–Channel

Drain–to–Gate Voltage (RGS = 1.0 MW) N–Channel

Gate–to–Source Voltage — Continuous N–Channel

Operating and Storage Temperature Range TJ and T

(TJ = 25°C unless otherwise noted)

Rating

P–Channel

DEVICE MARKING



Symbol Max Unit



Motorola Preferred Device

COMPLEMENTARY

DUAL TMOS POWER FET

20 VOLTS

CASE 846A–02, Style 2

Source 1

Gate 1

Source 2

Gate 2

DSS

DGR

stg

= 0.120 OHM

DS(on)

1.7 AMPERES

(N–CHANNEL)

= 0.175 OHM

DS(on)

1.6 AMPERES

(P–CHANNEL)

Micro8

1 2 3 4

Top View

20 20

±8.0 ±8.0

–55 to 150 °C

8 7 6 5

Drain 1 Drain 1 Drain 2 Drain 2

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MTDF1C02HD 13″ 12 mm embossed tape 4000 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

MTDF1C02HD

MAXIMUM RATINGS

Drain–to–Source Voltage N & P–Ch V Drain–to–Gate Voltage (RGS = 1.0 MΩ) N & P–Ch V Gate–to–Source Voltage — Continuous N & P–Ch V 1 inch SQ.

FR–4 or G–10 PCB Figure A below

1 die operating Steady State

Minimum FR–4 or G–10 PCB Figure B below

1 die operating Steady State

1 inch SQ. FR–4 or G–10 PCB Figure A below

1 die operating Steady State

Minimum FR–4 or G–10 PCB Figure B below

1 die operating Steady State

Minimum FR–4 or G–10 PCB Figure B below

2 die operating Steady State

Operating and Storage Temperature Range TJ, T

(1) Repetitive rating; pulse width limited by maximum junction temperature.

(TJ = 25°C unless otherwise noted)

Rating

Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current

(1)

Polarity Symbol Typical Max Unit

N–Channel R

P–Channel R

N & P–Ch R

DSS

DGR

THJA

stg

— 20 V — 20 V — ± 8.0 V 80

— — — — —

160

— — — — —

80 — — — — —

160

— — — — —

240

— — — — —

— – 55 to 150 °C

100

1.25 10

2.8

2.3 23

200

0.63

5.0

1.7

1.6 16

100

1.25 10

2.3

1.9 19

200

0.63

5.0

1.6

1.3 13

300

0.42

3.33

1.3

1.1 11

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

A A A

Figure B. Minimum FR–4 or G–10 PCBFigure A. 1.0 Inch Square FR–4 or G–10 PCB

Motorola TMOS Power MOSFET Transistor Device Data

MTDF1C02HD

(

4.5 Vdc,

(

2.7 Vdc,

VGS 4.5 Vdc)

()

(BR)DSS

DSS

GSS

GS(th)

DS(on)

iss

oss

rss

d(on)

d(off)

d(on)

d(off)

(1)

(N) (P)

— — — 100 nAdc

(N) (P)

20 20

— —

0.7

0.7 —

— —

—

— —

2.0

1.3

— —

5.0 14

— —

0.90

0.95

2.5

2.2

0.100

0.146

0.133

0.220 —

—

145 225

150

38 60

8.0 15

27 27

23 60

34 72

16 20

79 94

24 49

31 76

3.9

5.3

0.4

0.7

1.7

2.6

1.5

1.9

— —

1.0

1.1

1.4 —

—

0.120

0.175

0.16

0.28 —

—

— —

5.5

7.5 —

— —

—

Vdc

µAdc

Vdc

Ohm

mhos

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Polarity Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (Cpk ≥ 2.0)

(VGS = 0 Vdc, ID = 250 µAdc)

Breakdown Temperature Coefficient

(Positive)

Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 16 Vdc)

Gate–Body Leakage Current (VGS = ±8.0 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (Cpk ≥ 2.0)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient

(Negative)

Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.7 Adc)

Drain–to–Source On–Resistance (Cpk ≥ 2.0)

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(1) Negative signs for P–Channel device omitted for clarity. (continued) (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (3) Switching characteristics are independent of operating junction temperature.

(2)

(1)

(3)

= 25°C unless otherwise noted)

(1)(3)

(VGS = 0 Vdc, VDS = 20 Vdc)

(1)(3)

(VGS = 4.5 Vdc, ID = 1.6 Adc)

(1)(3)

(VGS = 2.7 Vdc, ID = 0.85 Adc) (VGS = 2.7 Vdc, ID = 0.8 Adc)

(VDS = 10 Adc, ID = 0.85 Adc) (VDS = 10 Adc, ID = 0.6 Adc)

(VDS = 15 Vdc, VGS = 0 Vdc,

(VDD = 10 Vdc, ID = 1.7 Adc,

(VDD = 10 Vdc, ID = 1.2 Adc,

(VDS = 10 Vdc, ID = 0.85 Adc,

(VDS = 10 Vdc, ID = 0.6 Adc,

(VDS = 16 Vdc, ID = 1.7 Adc,

(VDS = 16 Vdc, ID = 1.2 Adc,

f = 1.0 MHz)

VGS = 4.5 Vdc, RG = 6.0 Ω)

VGS = 2.7 Vdc, RG = 6.0 Ω)

VGS = 4.5 Vdc)

(1)

Motorola TMOS Power MOSFET Transistor Device Data

MTDF1C02HD

(

ELECTRICAL CHARACTERISTICS — continued

Characteristic Symbol Polarity Min Typ Max Unit

SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage

Reverse Recovery Time

Reverse Recovery Stored Charge Q

(1) Negative signs for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2)

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.2 Adc, VGS = 0 Vdc)

(IF = IS,

dIS/dt = 100 A/µs)

(TA = 25°C unless otherwise noted)

(1)

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel P–Channel

4.0

3.0

2.0

VGS = 10 V

4.5 V

2.7 V

2.3 V

2.1 V

TJ = 25°C

1.9 V

1.7 V

(1)

4.0

3.0

2.0

4.5 V

3.7 V

3.3 V

(N) (P)

VGS = 8

— —

0.84

0.89 29

86 14

27 15

0.018

0.115

3.1 V

2.9 V

2.7 V

2.5 V

2.3 V

1.0

1.1 —

— —

—

Vdc

µC

TJ = 25°C

, DRAIN CURRENT (AMPS)

1.0

0 0.4 1.6 2.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

1.20.8

1.5 V

Figure 1. On–Region Characteristics

4.0 VDS ≥ 10 V

3.0

2.0

100°C

, DRAIN CURRENT (AMPS)

1.0

1.51.0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

25°C

TJ = –55°C

2.0 2.50.5

Figure 2. Transfer Characteristics

1.0

, DRAIN CURRENT (AMPS)

4.0

3.0

2.0

, DRAIN CURRENT (AMPS)

1.0

2.1 V

1.9 V

1.7 V

0.80.4 1.2 1.6

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

Figure 1. On–Region Characteristics

VDS ≥ 10 V

100°C

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

25°C

TJ = –55°C

Figure 2. Transfer Characteristics

2.00

3.01.0 2.0

4.00

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel P–Channel

MTDF1C02HD

0.6

0.5

0.4

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

2.0 4.0 8.06.0

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

0.15

2.7 V

0.13

0.11

0.09

0.07

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0.05

DS(on)

0 1.0 2.0

VGS = 4.5 V

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

ID = 1.7 A TJ = 25

TJ = 25°C

3.0 4.0

0.4

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

(W)

DS(on)

2.0 4.0 6.0 8.0 10 VGS, GATE–T O–SOURCE (VOLTS)

Figure 3. On–Resistance versus

Gate–T o–Source Voltage

0.6 TJ = 25°C

0.5

0.4

2.7 V

0.3

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

DS(on)

1.00 ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

2.0

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

ID = 1.6 A TJ = 25

3.0 4.0

2.0 VGS = 4.5 V

ID = 0.85 A

1.6

1.2

0.8

0.4

, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)

0 –50 0 50 100 150

DS(on)

TJ, JUNCTION TEMPERATURE (°C)

1257525–25

Figure 5. On–Resistance Variation with

Temperature

Motorola TMOS Power MOSFET Transistor Device Data

2.0 VGS = 4.5 V

ID = 0.8 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCER

DS(on)

–25 25–50

TJ, JUNCTION TEMPERATURE (

50 10075 125 150

Figure 5. On–Resistance Variation with

Temperature

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