MOTOROLA MTD3055VT4, MTD3055V1 Datasheet

MTD3055V

Preferred Device

Power MOSFET
12 Amps, 60 Volts

N–Channel DPAK

This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.

• Avalanche Energy Specified

• I

MAXIMUM RATINGS (T

and V

DSS

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage

– Continuous
– Non–repetitive (tp ≤ 10 ms)

Drain Current – Continuous @ 25°C

Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C, when

mounted to minimum recommended pad
size

Operating and Storage Temperature

Range

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω )

Thermal Resistance

– Junction to Case
– Junction to Ambient
– Junction to Ambient, when mounted to
minimum recommended pad size

Maximum Temperature for Soldering

Purposes, 1/8″ from case for 10
seconds

Specified at Elevated Temperature

DS(on)

= 25°C unless otherwise noted)

C

Rating

Symbol Value Unit

TJ, T

V

V

I

E

R
R
R

DSS

DGR

GS

GSM

I

D

I

D

DM
P

D

stg

AS

θJC
θJA
θJA

T

L

60 Vdc
60 Vdc

± 20
± 25

12

7.3
37

48

0.32

1.75

–55 to

175

72 mJ

3.13
100

71.4

260 °C

Vdc
Vpk

Adc

Apk

Watts

W/°C

Watts

°C

°C/W

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12 AMPERES

60 VOLTS

R

DS(on)

N–Channel

D

G

4

CASE 369A

2

1

3

Y = Year
WW = Work Week
T = MOSFET

ORDERING INFORMATION

DPAK

STYLE 2

PIN ASSIGNMENT

Drain

1

Gate

Drain

= 150 mΩ

S

MARKING
DIAGRAM

4

3

2

Source

YWW
T
3055V

 Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 3

Device Package Shipping

MTD3055V DPAK 75 Units/Rail
MTD3055V1 DPAK 75 Units/Rail
MTD3055VT4 DPAK 2500 Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

MTD3055V/D

MTD3055V

)

f = 1.0 MHz)

R

G

9.1 Ω)

(V

DS

Vdc, I

D

Adc

dIS/dt = 100 A/µs)

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc) R
Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 12 Adc)

(ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 7.0 Vdc, ID = 6.0 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

(See Figure 8)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 1.)

Reverse Recovery Time

(See Figure 15)

Reverse Recovery Stored

Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

= 25°C unless otherwise noted)

J

(VDS = 25 Vdc, VGS = 0 Vdc,

(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)

f = 1.0 MHz

(VDD = 30 Vdc, ID = 12 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 48 Vdc, ID = 12 Adc,

48

VGS = 10 Vdc)

(IS = 12 Adc, VGS = 0 Vdc)

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

12

,

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

DS(on)

V

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

T

Q

1

Q

2

Q

3

V

SD

t

rr

t

a

t

b

Q

RR

L

D

L

S

60

–

–
–

– – 100 nAdc

2.0
–

– 0.10 0.15 Ohm

–
–

4.0 5.0 – mhos

– 410 500 pF
– 130 180
– 25 50

– 7.0 10 ns
– 34 60
– 17 30
– 18 50
– 12.2 17 nC
– 3.2 –
– 5.2 –
– 5.5 –

–
–

– 56 –
– 40 –
– 16 –
– 0.128 – µC

– 4.5 – nH

– 7.5 – nH

–

65

–
–

2.7

5.4

1.3
–

1.0

0.91

–
–

10

100

4.0
–

2.2

1.9

1.6
–

mV/°C

mV/°C

Vdc

µAdc

Vdc

Vdc

Vdc

ns

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2

MTD3055V

TYPICAL ELECTRICAL CHARACTERISTICS

24

T

= 25°C

J

20

16

12

8

, DRAIN CURRENT (AMPS)

D

I

4

0

01234 5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

4 V

Figure 1. On–Region Characteristics

0.3
VGS = 10 V

0.25

0.2

T

= 100°C

J

0.15

25°C

0.1

0.05

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

-55°C

24

V

≥ 10 V

DS

20

16

12

8

, DRAIN CURRENT (AMPS)

D

I

4

0

3579

24 6 810

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

25°C

T

= -55°C

J

100°C

Figure 2. Transfer Characteristics

0.15
T

= 25°C

J

0.14

0.13

0.12

0.11

0.1

, DRAIN-TO-SOURCE RESISTANCE (OHMS)

0.09

VGS = 10 V

15 V

DS(on)

0

R

0 8 12 16 20 24

4

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

1.6

VGS = 10 V
ID = 6 A

1.4

1.2

1.0

(NORMALIZED)

, DRAIN-TO-SOURCE RESISTANCE

0.8

DS(on)

R

0.6

-50

-25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On–Resistance Variation with

Temperature

175

DS(on)

0.08

R

04 8 162024

ID, DRAIN CURRENT (AMPS)

12

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

100

VGS = 0 V

10

, LEAKAGE (nA)

DSS

I

1

0 20304050 60

10

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

T

= 125°C

J

Figure 6. Drain–To–Source Leakage

Current versus Voltage

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MTD3055V

POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted

by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (∆t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain–gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I

) can be made from a

G(AV)

rudimentary analysis of the drive circuit so that
t = Q/I

G(AV)

During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, V

. Therefore, rise and fall

SGP

times may be approximated by the following:
tr = Q2 x RG/(VGG – V

tf = Q2 x RG/V

GSP

GSP

)

where
VGG = the gate drive voltage, which varies from zero to V

GG

RG = the gate drive resistance
and Q2 and V

are read from the gate charge curve.

GSP

During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:

t

d(on)

t

d(off)

= RG C

= RG C

In [VGG/(VGG – V

iss

In (VGG/V

iss

GSP

)]

GSP

)

The capacitance (C

) is read from the capacitance curve at

iss

a voltage corresponding to the off–state condition when
calculating t
on–state when calculating t

and is read at a voltage corresponding to the

d(on)

d(off)

.

At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.

The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.

1200

VDS = 0 V VGS = 0 V

1000

C

iss

800

600

C

rss

400

C, CAPACITANCE (pF)

200

0

10 5 0 10 25

V

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

GS

V

DS

T

J

C

iss

C

oss

C

rss

15

= 25°C

205

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