Motorola MTD2N40E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
This a dvanced h igh v oltage TMOS E –FET is d esigned t o
withstand high energy in the avalanche and switch efficiently. This
new high energy device also offers a drain–to–soure diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and
other inductive loads, the avalanche energy capability is specified
to eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
• Replaces MTD1N40E
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage V
DSS
400 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) V
DGR
400 Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
2.0
1.5
6.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size
P
D
40
0.32
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
E
AS
45 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted to minimum recommended pad size
R
θJC
R
θJA
R
θJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTD2N40E/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
CASE 369A–13, Style 2
DPAK
TMOS POWER FET
2.0 AMPERES
400 VOLTS
R
DS(on)
= 3.5 OHM
Motorola Preferred Device
Motorola, Inc. 1995
MTD2N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
400
—
—
451
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
V
GS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc) R
DS(on)
— 3.1 3.5 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
V
DS(on)
—
—
7.3
—
8.4
7.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) g
FS
0.5 1.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 229 320 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 34 40
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 7.3 10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 8.0 16 ns
Rise Time
t
r
— 8.4 14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 12 26
Fall Time
G
= 9.1 Ω)
t
f
— 11 20
Q
T
— 8.6 12 nC
DS
= 320 Vdc, ID = 2.0 Adc,
Q
1
— 2.6 —
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q
2
— 3.2 —
Q
3
— 5.0 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.88
0.76
1.2
—
Vdc
t
rr
— 156 —
S
= 2.0 Adc, VGS = 0 Vdc,
t
a
— 99 —
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 57 —
Reverse Recovery Stored Charge Q
RR
— 0.89 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 4.5 — nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 7.5 — nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 200 Vdc, ID = 2.0 Adc,
(V
(I
ns
MTD2N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
D
I , DRAIN CURRENT (AMPS)
4
3.2
2.4
1.6
0
0 4 8 12 16 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
7 V
6 V
8 V
5 V
TJ = 25°C
D
I , DRAIN CURRENT (AMPS)
4
3
2
1
0
2 3 4 5 6 8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
–55°C
TJ = 100°C
25°C
0.8
7
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
15 V
3.0
4.5
5.0
4.0
3.5
0.5 1.5 3.52.51 2 43
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
2
6
4
0
0 1 2 3 4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25°C
100°C
–55°C
2.5
0
8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
VGS = 0 V
0 200 400
100
100 300
TJ = 125°C
1000
10
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 1 A
–50 0 50 100 150125–25 25 75
2.5
2
1.5
1
0.5
0
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