Motorola MTB6N60E1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MTB6N60E1/D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
TMOS POWER FET
6.0 AMPERES
600 VOL TS
R
DS(on)
= 1.2 OHM
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
• Robust High Voltage Termination
D
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
• Short Heatsink Tab Manufactured — Not Sheared
G
S
CASE 418C–01, Style 2
D2PAK–SL
• Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
(TC = 25°C unless otherwise noted)
Rating
(1)
(1)
Symbol Value Unit
600 Vdc
600 Vdc
± 20
± 40
6.0
4.6
18
125
1.0
2.5
– 55 to 150 °C
405
1.0
62.5
50
260 °C
V
V
I
E
R
R
R
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
stg
AS
θJC
θJA
θJA
L
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
mJ
°C/W
REV 1
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MTB6N60E1
)
f = 1.0 MHz)
V
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
T emperature Coef ficient (Negative)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) R
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDS = 25 Vdc, VGS = 0 Vdc,
(VDS = 300 Vdc, ID = 6.0 Adc,
(VDS = 300 Vdc, ID = 6.0 Adc,
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
f = 1.0 MHz
= 10 Vdc,
GS
RG = 9.1 Ω)
VGS = 10 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
600
—
—
—
— — 100 nAdc
2.0
—
— 0.94 1.2 Ohms
—
—
2.0 5.5 — mhos
— 1498 2100 pF
— 158 217
— 29 56
— 14 30 ns
— 19 40
— 40 80
— 26 50
— 35.5 50 nC
— 8.1 —
— 14.1 —
— 15.8 —
—
—
— 266 —
— 166 —
— 100 —
— 2.5 — µC
— 4.5 —
— 7.5
—
689
—
—
3.0
7.1
6.0
—
0.83
0.72
—
—
1.0
50
4.0
—
8.6
7.6
1.5
—
— nH
mV/°C
mV/°C
Vdc
µAdc
Vdc
Vdc
Vdc
ns
nH
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTB6N60E1
12
TJ = 25°C
10
8
6
4
, DRAIN CURRENT (AMPS)
D
I
2
0
2 6 10 14 6.0
04 81216
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
VGS = 10 V
7 V
8 V
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
TJ = 100°C
25°C
–55°C
6 V
5 V
4 V
18
12
VDS ≥ 10 V
10
8
6
4
, DRAIN CURRENT (AMPS)
D
I
2
0
2.5 3.5 4.5 5.5
2.0 3.0 4.0 5.0
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
1.4
TJ = 25°C
1.3
1.2
1.1
1.0
0.9
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
VGS = 10 V
15 V
100°C
25°C
TJ = –55°C
DS(on)
0
R
02 6 10
48
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and T emperature
2.5
VGS = 10 V
ID = 3 A
2
1.5
1
(NORMALIZED)
, DRAIN–TO–SOURCE RESIST ANCE
0.5
DS(on)
R
0
–50 0 50 100 150125–25 25 75
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
12
0.8
DS(on)
R
0
26481210
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10000
VGS = 0 V
1000
100
, LEAKAGE (nA)
DSS
I
10
1
0 200 400
100 300 600500
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
25°C
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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