Motorola MTB36N06V Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
TMOS V i s a new technology d esigned to a chieve an on–resistance
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed f or low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low R
DS(on)
Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETs
• Avalanche Energy Specified
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and
TMOS E–FET
• Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
60 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
60 Vdc
Gate–to–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 50 µs)
V
GS
V
GSM
±20
±25
Vdc
Vpk
Drain Current — Continuous @ 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
32
22.6
112
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
P
D
90
0.6
3.0
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 175 °C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
E
AS
205 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
1.67
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds T
L
260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 2
Order this document
by MTB36N06V/D
SEMICONDUCTOR TECHNICAL DATA
TM
TMOS POWER FET
32 AMPERES
60 VOLTS
R
DS(on)
= 0.04 OHM
CASE 418B–02, Style 2
D2PAK
D
S
G
Motorola Preferred Device
Motorola, Inc. 1996
MTB36N06V
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
—
—
61
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
—
2.6
6.0
4.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc) R
DS(on)
— 0.034 0.04 Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)
V
DS(on)
—
—
1.25
—
1.54
1.47
Vdc
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc) g
FS
5.0 7.83 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 1220 1700 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 337 470
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 74.8 150
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 14 30 ns
Rise Time
t
r
— 138 270
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 54 100
Fall Time
G
= 9.1 Ω)
t
f
— 91 180
Q
T
— 39 50 nC
(See Figure 8)
DS
= 48 Vdc, ID = 32 Adc,
Q
1
— 7 —
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
Q
2
— 17 —
Q
3
— 13 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 150°C)
V
SD
—
—
1.03
0.94
2.0
—
Vdc
t
rr
— 92 —
S
= 32 Adc, VGS = 0 Vdc,
t
a
— 64 —
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 28 —
Reverse Recovery Stored Charge Q
RR
— 0.332 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 3.5 —
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 7.5 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 30 Vdc, ID = 32 Adc,
(V
(I
ns
MTB36N06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
0 1 2 3
0
18
72
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
1 3 5 7 9
0
18
54
72
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 18 36 72
0.02
0.06
0.04
0.1
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 36 54 72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
1.8
0 10 20 40 50 60
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
– 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 16 A
TJ = 25
°C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100
°C
25
°C
– 55
°C
25
°C
TJ = 25
°C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125
°C
36
54
4
36
54 18
30
VDS ≥ 10 V
TJ = 100
°C
–55
°C
4 V
2
4 6 8
0.08
0
1
1.4
1000
1
100
°C
25°C
175
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