Motorola MTB36N06V Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

  

 



"    
  ! !

N–Channel Enhancement–Mode Silicon Gate

TMOS V i s a new technology d esigned to a chieve an on–resistance
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed f or low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low R

DS(on)

Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETs

• Avalanche Energy Specified

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and

TMOS E–FET

• Surface Mount Package Available in 16 mm 13–inch/2500 Unit

Tape & Reel, Add T4 Suffix to Part Number

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

60 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

60 Vdc

Gate–to–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (tp ≤ 50 µs)

V

GS

V

GSM

±20
±25

Vdc
Vpk

Drain Current — Continuous @ 25°C

Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)

I

D

I

D

I

DM

32

22.6
112

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C (1)

P

D

90

0.6

3.0

Watts

W/°C

Watts

Operating and Storage Temperature Range TJ, T

stg

– 55 to 175 °C

Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)

E

AS

205 mJ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)

R

θJC

R

θJA

R

θJA

1.67

62.5

50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds T

L

260 °C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

REV 2

Order this document

by MTB36N06V/D



SEMICONDUCTOR TECHNICAL DATA

TM



TMOS POWER FET

32 AMPERES

60 VOLTS

R

DS(on)

= 0.04 OHM

CASE 418B–02, Style 2

D2PAK

D

S

G

Motorola Preferred Device

 Motorola, Inc. 1996

MTB36N06V

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

J

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)

V

(BR)DSS

60
—

—
61

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

I

DSS

—
—

—
—

10

100

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

GSS

— — 100 nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0
—

2.6

6.0

4.0
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc) R

DS(on)

— 0.034 0.04 Ohm

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)

V

DS(on)

—
—

1.25
—

1.54

1.47

Vdc

Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc) g

FS

5.0 7.83 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 1220 1700 pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

C

oss

— 337 470

Reverse Transfer Capacitance

f = 1.0 MHz)

C

rss

— 74.8 150

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

t

d(on)

— 14 30 ns

Rise Time

t

r

— 138 270

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

t

d(off)

— 54 100

Fall Time

G

= 9.1 Ω)

t

f

— 91 180

Q

T

— 39 50 nC

(See Figure 8)

DS

= 48 Vdc, ID = 32 Adc,

Q

1

— 7 —

(VDS = 48 Vdc, ID = 32 Adc,

VGS = 10 Vdc)

Q

2

— 17 —

Q

3

— 13 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 32 Adc, VGS = 0 Vdc)

(IS = 32 Adc, VGS = 0 Vdc, TJ = 150°C)

V

SD

—
—

1.03

0.94

2.0
—

Vdc

t

rr

— 92 —

S

= 32 Adc, VGS = 0 Vdc,

t

a

— 64 —

(IS = 32 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

t

b

— 28 —

Reverse Recovery Stored Charge Q

RR

— 0.332 — µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

L

D

— 3.5 —

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

— 7.5 —

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

Gate Charge

Reverse Recovery Time

(VDD = 30 Vdc, ID = 32 Adc,

(V

(I

ns

MTB36N06V

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE

(NORMALIZED)

0 1 2 3

0

18

72

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

1 3 5 7 9

0

18

54

72

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0 18 36 72

0.02

0.06

0.04

0.1

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0 36 54 72

0.028

0.036

0.044

0.052

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

– 50

0.6

0.8

1.2

1.6

1.8

0 10 20 40 50 60

10

100

TJ, JUNCTION TEMPERATURE (

°

C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

– 25 0 25 50 75 100 125 150

VGS = 10 V
ID = 16 A

TJ = 25

°C

VGS = 10 V

9 V

8 V

6 V

5 V

7 V

VGS = 10 V

TJ = 100

°C

25

°C

– 55

°C

25

°C

TJ = 25

°C

VGS = 10 V

15 V

VGS = 0 V

TJ = 125

°C

36

54

4

36

54 18

30

VDS ≥ 10 V

TJ = 100

°C

–55

°C

4 V

2

4 6 8

0.08

0

1

1.4

1000

1

100

°C

25°C

175