Motorola MTB36N06E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R
DS(on)
capabilities. This advanced
TMOS E –FET i s designed t o withstand h igh e nergy i n the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
60 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
60 Vdc
Gate–to–Source Voltage — Continuous V
GS
±20 Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
36
22
144
Amps
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
P
D
100
0.80
2.5
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vpk, IL = 36 Apk, L = 0.34 mH, RG = 25 Ω)
E
AS
220 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
R
θJC
R
θJA
R
θJA
1.25
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB36N06E/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1994
TMOS POWER FET
36 AMPERES
60 VOLTS
R
DS(on)
= 0.04 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
MTB36N06E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
—
—
61
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current–Forward
(V
gsf
= 20 Vdc, VDS = 0)
I
GSSF
— — 100 nAdc
Gate–Body Leakage Current–Reverse
(V
gsr
= 20 Vdc, VDS = 0)
I
GSSR
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
—
2.8
6.5
4.0
—
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 18 Adc) R
DS(on)
— 0.034 0.04 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 36 Adc)
(ID = 18 Adc, TJ = 125°C)
V
DS(on)
—
—
1.33
1.00
1.75
1.44
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 18 Adc) g
FS
8.0 — — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 1300 2000 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 600 850
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 150 350
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 18 36 ns
Rise Time
t
r
— 100 200
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 10 Ω)
t
d(off)
— 45 90
Fall Time
G
= 10 Ω)
t
f
— 50 100
Q
T
— 38 47 nC
(See Figure 8)
DS
= 48 Vdc, ID = 36 Adc,
Q
1
— 10 —
(VDS = 48 Vdc, ID = 36 Adc,
VGS = 10 Vdc)
Q
2
— 15 —
Q
3
— 14 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 36 Adc, VGS = 0 Vdc)
(IS = 36 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
1.5
1.25
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
t
rr
— 110 — ns
Reverse Recovery Stored Charge
dIS/dt = 100 A/µs)
Q
RR
— 230 — nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
L
D
— 3.5 — nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 7.5 — nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
(VDD = 30 Vdc, ID = 36 Adc,
(V
(IS = 36 Adc, VGS = 0 Vdc,
MTB36N06E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
0 2 4 6 8 10
0
20
40
60
80
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
0 2 4 6 8 10
0
20
40
60
80
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.6
1.4
2.2
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
–25 0 25 50 75 100 125 150 175
TJ = 25°C
10 V
9 V
8 V
7 V
6 V
5 V
VGS = 4 V
VDS ≥ 10 V
TJ = –55°C
25°C
100°C
–55°C
VGS = 10 V
ID = 18 A
1.8
1
40
38
36
34
32
30
28
26
24
22
20
0 10 20 30 40 50 60 70 80
VGS = 10 V
15 V
TJ = 25°C
1000
100
15 20 25 30 35 40 45 50 55 60
100°C
25°C
TJ = 125°C
VGS = 0 V
25°C
TJ = 100°C
VGS = 10 V
400
200
Figure 6. Drain–To–Source Leakage
Current versus Voltage
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
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