Motorola MTB2N40E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R
DS(on)
capabilities. This advanced
TMOS E –FET i s designed t o withstand h igh e nergy i n the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured — Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
400 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
400 Vdc
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
2.0
1.5
6.0
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(1)
P
D
40
0.32
2.5
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
E
AS
45 mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient
(1)
R
θJC
R
θJA
R
θJA
3.13
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTB2N40E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
2.0 AMPERES
400 VOLTS
R
DS(on)
= 3.8 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
Motorola, Inc. 1996
REV 1
MTB2N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
400
—
—
451
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc) R
DS(on)
— 3.1 3.5 Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125°C)
V
DS(on)
—
—
7.3
—
8.4
7.4
Vdc
Forward Transconductance (VDS = 50 Vdc, ID = 1.0 Adc) g
FS
0.5 1.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 229 320 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 34 40
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 7.3 10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 8.0 16 ns
Rise Time
t
r
— 8.4 14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 12 26
Fall Time
G
= 9.1 Ω)
t
f
— 11 20
Q
T
— 8.6 12 nC
(See Figure 8)
DS
= 320 Vdc, ID = 2.0 Adc,
Q
1
— 2.6 —
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q
2
— 3.2 —
Q
3
— 5.0 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.0 Adc, VGS = 0 Vdc )
(IS = 2.0 Adc, VGS = 0 Vdc , TJ = 125°C)
V
SD
—
—
0.88
0.76
1.2
—
Vdc
t
rr
— 156 — ns
(See Figure 14)
S
= 2.0 Adc, VGS = 0 Vdc,
t
a
— 99 —
(IS = 2.0 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/µs)
t
b
— 57 —
Reverse Recovery Stored Charge Q
RR
— 0.89 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 4.5 —
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 7.5 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 200 Vdc, ID = 2.0 Adc,
(V
(I
MTB2N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
TJ = 25°C
VGS = 10 V
15 V
3.0
4.5
VGS = 0 V
0 200 400
100
100 300
TJ = 125°C
1000
5.0
4.0
3.5
10
0.5 1.5 3.52.51 2 43
D
I , DRAIN CURRENT (AMPS)
4
3.2
2.4
1.6
0
0 4 8 12 16 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
7 V
6 V
8 V
5 V
TJ = 25°C
D
I , DRAIN CURRENT (AMPS)
4
3
2
1
0
2 3 4 5 6 8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
–55°C
TJ = 100°C
25°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
2
6
4
0
0 1 2 3 4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25°C
100°C
–55°C
2.5
0
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 1 A
–50 0 50 100 150125–25 25 75
2.5
2
1.5
1
0.5
0
0.8
7
8
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