Motorola MTB23P06E Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

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

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  ! !

P–Channel Enhancement–Mode Silicon Gate

The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R

DS(on)

capabilities. This advanced
TMOS E –FET i s designed t o withstand h igh e nergy i n the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• Short Heatsink Tab Manufactured — Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4

Suffix to Part Number

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

60 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

60 Vdc

Gate–to–Source Voltage — Continuous V

GS

±20 Vdc

Drain Current — Continuous

Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)

I

D

I

D

I

DM

23
14
75

Adc

Apk

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size

P

D

125

1.0

2.5

Watts

W/°C

Watts

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vpk, IL = 23 Apk, L = 5.7 mH, RG = 25 Ω)

E

AS

1500 mJ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size

R

θJC

R

θJA

R

θJA

1.0

62.5
50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

L

260 °C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MTB23P06E/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1994



TMOS POWER FET

23 AMPERES

60 VOLTS

R

DS(on)

= 0.12 OHM

Motorola Preferred Device

CASE 418B–02, Style 2

D2PAK

D

S

G



MTB23P06E

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

J

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)

V

(BR)DSS

60
—

—
—

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

100

1000

µAdc

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)

V

GS(th)

2.0
—

2.8

3.1

4.0
—

Vdc

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc) R

DS(on)

— 0.094 0.12 Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 23 Adc)
(ID = 11.5 Adc, TJ = 125°C)

V

DS(on)

—
—

2.21
—

3.3

3.0

Vdc

Forward Transconductance (VDS = 8.0 Vdc, ID = 11.5 Adc) g

FS

5.0 — — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 1357 1900 pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

C

oss

— 600 840

Reverse Transfer Capacitance

f = 1.0 MHz)

C

rss

— 200 400

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

t

d(on)

— 18 36 ns

Rise Time

t

r

— 140 280

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 10 Ω)

t

d(off)

— 76 152

Fall Time

G

= 10 Ω)

t

f

— 69 138

Q

T

— 75 105 nC

(See Figure 8)

DS

= 48 Vdc, ID = 23 Adc,

Q

1

— 9.0 —

(VDS = 48 Vdc, ID = 23 Adc,

VGS = 10 Vdc)

Q

2

— 37 —

Q

3

— 27 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 23 Adc, VGS = 0 Vdc)

(IS = 23 Adc, VGS = 0 Vdc, TJ = 125°C)

V

SD

—
—

2.2

1.85

3.5
—

Vdc

t

rr

— 120 —

(See Figure 14)

S

= 23 Adc, VGS = 0 Vdc,

t

a

— — —

(IS = 23 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

t

b

— — —

Reverse Recovery Stored Charge Q

RR

— 600 — µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)

L

D

—
—

3.5

4.5

—
—

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

— 7.5 — nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

Gate Charge

Reverse Recovery Time

(VDD = 30 Vdc, ID = 23 Adc,

(V

(I

ns

MTB23P06E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

I

DSS

, LEAKAGE (nA)

32
28
24
20
16
12

8
4

0

1086420

VDS, DRAIN–TO–SOURCE CHARACTERISTICS (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

Figure 1. On–Region Characteristics

10 V

TJ = 25°C

VGS = 5 V

8 V

7 V

6 V

32
28
24
20
16
12

8
4
0

I

D

, DRAIN CURRENT (AMPS)

1086420

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 150°C

–55°C

25°C

TJ = 150°C

–55°C

0.5

0.4

0.3

0.2

0.1

0

0

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

4 8 12 16 20 24 28 32

2

1.5

1

0.5

0

2001751501251007550250–25–50

TJ, JUNCTION TEMPERATURE (°C)

DS(on)

R , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

VGS = 10 V
ID = 10 A

ID, DRAIN CURRENT (AMPS)

0.18

0.16

0.14

0.12

0.1

0.08

0.06

0.04

0.02
4842363024181260

VGS = 10 V

15 V

TJ = 25°C

60555045403530252015

10000

1000

100

10

TJ = 125°C

100°C

25°C

VGS = 0 V

20

40

200

400

2000

4000

VDS ≥ 10 V

VGS = 10 V

25°C

Figure 5. On–Resistance Variation with

Temperature

9 V

Figure 6. Drain–To–Source Leakage Current

versus Voltage

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

DS(on)

R

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

DS(on)

R