Motorola MTB20N20E Datasheet

1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R
DS(on)
capabilities. This advanced TMOS E –FET i s designed t o withstand h igh e nergy i n the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
200 Vdc
Drain–Gate Voltage (RGS = 1.0 M) V
DGR
200 Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp 10 ms)
V
GS
V
GSM
± 20 ± 40
Vdc Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp 10 µs)
I
D
I
D
I
DM
20 12 60
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
P
D
125
1.0
2.5
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 )
E
AS
600 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
R
θJC
R
θJA
R
θJA
1.0
62.5 50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTB20N20E/D

SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
20 AMPERES
200 VOLTS
R
DS(on)
= 0.16 OHM
Motorola Preferred Device
CASE 418B–02, Style 2
D2PAK
D
S
G
Motorola, Inc. 1995
MTB20N20E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive)
V
(BR)DSS
200
263
— —
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc) (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
— —
— —
10
100
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative)
V
GS(th)
2.0 —
7.0
4.0 —
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc) R
DS(on)
0.12 0.16 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc) (ID = 10 Adc, TJ = 125°C)
V
DS(on)
— —
— —
3.84
3.36
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) g
FS
8.0 11 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
1880 2700 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
378 535
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
68 100
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
17 40 ns
Rise Time
t
r
86 180
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
t
d(off)
50 100
Fall Time
G
= 9.1 )
t
f
60 120
Gate Charge
(See Figure 8)
Q
T
54 75 nC
Q
1
12
VGS = 10 Vdc)
Q
2
24
Q
3
22
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
— —
1.0
0.82
1.35 —
Vdc
t
rr
239
(See Figure 14)
S
= 20 Adc, VGS = 0 Vdc,
t
a
136
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
103
Reverse Recovery Stored Charge Q
RR
2.09 µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
4.5 nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
7.5 nH
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
Reverse Recovery Time
(VDD = 100 Vdc, ID = 20 Adc,
(VDS = 160 Vdc, ID = 20 Adc,
(I
ns
MTB20N20E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 1 3 5 7 9
0
10
20
30
40
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
2.0 8.5
0
10
20
30
40
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 4 16 24 36 40
0.05
0.10
0.25
0.30
0.35
0 4 12 20 32 40
0.10
0.11
0.13
0.15
0.17
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.4
1.2
1.6
2.0
2.4
0 200
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
VGS = 10 V ID = 10 A
–25 0 25 50 75 100 125 150
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
TJ = –55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
2 4 6 8 10
9 V
6 V
7 V
8 V
35
25
15
5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
TJ = 100°C
25°C
–55°C
0.15
0.20
8 12 20 28 32
0.16
0.14
0.12
8 16 24 28 36
0.8
25°C
100°C
50 100 150
TJ = 125°C
VGS = 10 V
15 V
5 V
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