Motorola MTB16N25E Datasheet

Motorola TMOS Power MOSFET Transistor Device Data

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N–Channel Enhancement–Mode Silicon Gate

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R

DS(on)

capabilities. This advanced TMOS E –FET i s designed t o withstand h igh e nergy i n the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• Short Heatsink Tab Manufactured — Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add –T4

Suffix to Part Number

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–Source Voltage V

DSS

250 Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ) V

DGR

250 Vdc

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)

GSM

± 20 ± 40

Vdc Vpk

Drain Current — Continuous

Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 µs)

16 10 56

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size

125

1.0

2.5

Watts

W/°C

Watts

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25 Ω )

384 mJ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size

θJC

θJA

1.0

62.5 50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

260 °C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MTB16N25E/D

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SEMICONDUCTOR TECHNICAL DATA



TMOS POWER FET

16 AMPERES

250 VOLTS

DS(on)

= 0.25 OHM

CASE 418B–02, Style 2

D2PAK

Motorola Preferred Device



 Motorola, Inc. 1995

MTB16N25E

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive)

(BR)DSS

250

—

333

— —

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 250 Vdc, VGS = 0 Vdc) (VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)

DSS

— —

100

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative)

GS(th)

2.0 —

3.0

7.0

4.0 —

Vdc

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc) R

DS(on)

— 0.17 0.25 Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 16 Adc) (ID = 8.0 Adc, TJ = 125°C)

DS(on)

— —

3.6 —

4.8

4.2

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) g

3.0 7.0 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

— 1558 2180 pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

oss

— 281 390

Reverse Transfer Capacitance

f = 1.0 MHz)

rss

— 130 260

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

d(on)

— 15 30 ns

Rise Time

— 64 130

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

d(off)

— 56 110

Fall Time

= 9.1 Ω)

— 44 90

— 53.4 70 nC

(See Figure 8)

= 200 Vdc, ID = 16 Adc,

— 9.3 —

(VDS = 200 Vdc, ID = 16 Adc,

VGS = 10 Vdc)

— 27.5 —

— 17.1 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 16 Adc, VGS = 0 Vdc)

(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)

— —

0.915

1.39

1.5 —

Vdc

— 234 —

(See Figure 14)

= 16 Adc, VGS = 0 Vdc,

— 170 —

(IS = 16 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

— 64 —

Reverse Recovery Stored Charge Q

— 2.165 — µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

— 4.5 — nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

— 7.5 — nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

Gate Charge

Reverse Recovery Time

(VDD = 125 Vdc, ID = 16 Adc,

MTB16N25E

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

0 2 4 6 81

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VDS ≥ 10 V

TJ = –55°C

100°C

5 V

6 V

7 V

VGS = 10 V

2 3 4 5 6 7

25°C

8 V

7 8

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0 5 10 15 20 25

0.1

0.2

0.4

0.6

ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

TJ = 100°C

25°C

–55°C

TJ = 25°C

VGS = 10 V

0.5

0.3

0.1

0.14

0.22

0.26

0 8 16 24 32 40

15 V

VGS = 10 V

DS(on)

, DRAIN–TO–SOURCE RESISTANCE

(NORMALIZED)

–50

0.5

1.0

1.5

2.0

0 100 200

100

TJ, JUNCTION TEMPERATURE (

C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

DSS

, LEAKAGE (nA)

–25 0 25 50 75 100 125 150

VGS = 0 V

50 150 250

TJ = 125°C

25°C

100°C

VGS = 10 V ID = 8 A

2.5

1000

3 5

0.18

3.0

300

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