Motorola MTB1306 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel Enhancement–Mode Silicon Gate

The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable

to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

Specified at Elevated Temperature

DS(on)

• Short Heatsink Tab Manufactured — Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Surface Mount Package Available in 16 mm, 13–inch/2500

Unit Tape & Reel, Add T4 Suffix to Part Number

capabilities. This advanced

DS(on)

TMOS POWER FET

75 AMPERES

30 VOLTS

R

= 0.0065 OHM

DS(on)

CASE 418B–03

D2PAK

MAXIMUM RATINGS

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous

Drain Current — Continuous

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω)

Thermal Resistance — Junction–to–Case

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds T

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and HDTMOS are trademarks of Motorola, Inc.

(TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

— Non–Repetitive (tp ≤ 10 ms)

— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)

(1)

— Junction–to–Ambient
— Junction–to–Ambient

(1)

V

V

I

E

R
R
R

DSS

DGR

GS

GSM

I

D

I

D

DM
P

D

stg

AS

θJC
θJA
θJA

L

30 Vdc
30 Vdc

±20
±20

75
59

225
150

1.2

2.5

–55 to 150 °C

280

0.8

62.5
50

260 °C

Vdc
Vpk

Adc

Apk

Watts

W/°C

Watts

mJ

°C/W

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MTB1306

)

f = 1.0 MHz)

V

G

)

(

DS

,

D

,

(

S

,

GS

,

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)

Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Stored Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(1)

(T

= 25°C unless otherwise noted)

J

Characteristic

(VDS = 25 Vdc, VGS = 0 Vdc,

(2)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

f = 1.0 MHz

(VDD = 15 Vdc, ID = 75 Adc,

(VDS = 24 Vdc, ID = 75 Adc,

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc,

= 5.0 Vdc,

GS
RG = 4.7 Ω)

VGS = 5.0 Vdc)

dIS/dt = 100 A/µs)

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

T

Q

1

Q

2

Q

3

V

SD

t

rr

t

a

t

b

RR

30 — —

—
—

— — 100 nAdc

1.0 1.5 2.0

—
—

—
—

15 55 — mhos

— 2560 3584 pF
— 1305 1827
— 386 772

— 17 35 ns
— 170 340
— 68 136
— 145 290
— 50 70 nC
— 8.3 —
— 25.3 —
— 17.2 —

—
—

— 84 —
— 35 —
— 53 —
— 0.13 — µC

—
—

5.8

7.4

0.44
—

0.75

0.64

10

100

6.5

8.5

0.5

0.38

1.1
—

Vdc

µAdc

Vdc

m

W

Vdc

Vdc

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MTB1306

150

125

TJ = 25°C

100

75

50

, DRAIN CURRENT (AMPS)

D

I

25

0

0 0.25 0.75 1.25 1.5 2.0

VGS = 10 V

0.5 1.0 1.75

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

5.0 V

4.0 V

Figure 1. On–Region Characteristics

0.010

0.009

0.008

0.007

0.006

0.005

0.004

0.003

0.002

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0.001
0

DS(on)

R

20 40 80

TJ = 100°C

25°C

–55°C

60 100 140 60 80 100

ID, DRAIN CURRENT (AMPS)

VGS ≥ 10 V

120

180

VDS ≥ 10 V

160
140
120
100

80
60

, DRAIN CURRENT (AMPS)

D

40

I

20

0

2.0 2.5 3.0 3.5 4.0 4.5

25°C

125°C

TJ = –55°C

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.009
TJ = 25°C

0.008

0.007

0.006

0.005

, DRAIN–TO–SOURCE ON–RESISTANCE (OHMS)

0.004

20 40 90

DS(on)

R

30 50 70 150120 140130110

VGS = 5.0 V

10 V

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and T emperature

2.0
VGS = 10 V

ID = 38 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCE

DS(on)

R

0
–50

–25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (

Figure 5. On–Resistance Variation with

Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

10,000

1000

, LEAKAGE (nA)

100

DSS

I

10

5.0

°

C)

10 15 20 25 30

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

TJ = 125°C

100°C

Figure 6. Drain–T o–Source Leakage

Current versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data

3