MOTOROLA MSD1819A-RT3 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
• High hFE, 210–460
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
60 Vdc
Collector-Emitter Voltage V
(BR)CEO
50 Vdc
Emitter-Base Voltage V
(BR)EBO
7.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Collector Current — Peak I
C(P)
200 mAdc
DEVICE MARKING
MSD1819A-RT1 = ZR
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation
(1)
P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
–55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V
(BR)CEO
50 — Vdc
Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V
(BR)CBO
60 — Vdc
Emitter-Base Breakdown Voltage (IE = 10 µAdc, IE = 0) V
(BR)EBO
7.0 — Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) I
CBO
— 0.1 µA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) I
CEO
— 100 µA
DC Current Gain
(2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
h
FE1
h
FE2
210
90
340
—
—
Collector-Emitter Saturation Voltage
(2)
(IC = 100 mAdc, IB = 10 mAdc)
V
CE(sat)
— 0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSD1819A–RT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
Motorola Preferred Devices
CASE 419–02, STYLE 3
SC–70/SOT–323
1
2
3
COLLECTOR
3
1
BASE2EMITTER
Motorola, Inc. 1997
REV 2
MSD1819A-RT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (
°
C)
P
D
, POWER DISSIPATION (MILLIWATTS)
Figure 2. IC – V
CE
VCE, COLLECTOR VOL TAGE (V)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 5. On Voltage
IC, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
60
0
50
40
30
20
10
0
2468
T
A
= 25
°
C
160
µ
A
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
IB = 20 µA
DC CURRENT GAIN
1000
0.1
100
10
1 10 100
TA = 25°C
TA = –25°C
TA = 75°C
VCE = 10 V
V
CE
, COLLECTOR-EMITTER VOL TAGE (V)
2
0.01
1.5
1
0.5
0
0.1 1 10 100
TA = 25°C
COLLECTOR VOLTAGE (mV)
900
0.2
800
700
600
500
400
300
200
100
0.5 1 5 10 20 40 60 80 100 150 200
TA = 25°C
VCE = 5 V
0
R
θ
JA
= 833°C/W
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