MOTOROLA MSB709-RT1, MSB709-RT2 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector–Base Voltage V
(BR)CBO
–60 Vdc
Collector–Emitter Voltage V
(BR)CEO
–45 Vdc
Emitter–Base Voltage V
(BR)EBO
–7.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
Collector Current — Peak I
C(P)
–200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
–55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Min Max Unit
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) V
(BR)CEO
–45 — Vdc
Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V
(BR)CBO
–60 — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IE = 0) V
(BR)EBO
–7.0 — Vdc
Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0) I
CBO
— –0.1 µAdc
Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0) I
CEO
— –100 nAdc
DC Current Gain
(1)
(VCE = –10 Vdc, IC = –2.0 mAdc)
h
FE1
210 340 —
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –10 mAdc)
V
CE(sat)
— –0.5 Vdc
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
DEVICE MARKING
Marking Symbol
AR
X
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSB709–RT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE1EMITTER
REV 3
MSB709-RT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct s ize to i nsure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will s elf align when
subjected to a solder reflow process.
mm
inches
2.5–3.0
0.039
1.0
0.094
0.8
0.098–0.118
2.4
0.031
0.95
0.037
0.95
0.037
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad
size. This can vary from the minimum pad size for soldering
to the pad size given for maximum power dissipation. Power
dissipation for a s urface m ount device is determined by
T
J(max)
, the maximum rated junction temperature of the die,
R
θJA
, the thermal resistance from the device junction to
ambient; and the o perating temperature, TA. Using t he
values provided on the data sheet, PD can be calculated as
follows:
PD =
T
J(max)
– T
A
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD =
150°C – 25°C
625°C/W
= 200 milliwatts
The 6 25°C/W assumes the use o f the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result i n device failure. Therefore, t he
following items s hould always be o bserved in order to
minimize the thermal s tress to w hich t he d evices a re
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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