Motorola MRFIC0917 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
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by MRFIC0917/D
!
This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.5 Watts output power and 43% minimum power added
efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve
this superior performance, Motorola’s planar GaAs MESFET process is
employed. The device is packaged in the PFP–16 Power Flat Pack package
which gives excellent thermal performance through a solderable backside
contact.
• Usable Frequency Range 800 to 1000 MHz
• Typical Output Power: 34.5 dBm @ 3.6 Volts
• 43% Minimum Power Added Efficiency
• Low Parasitic, High Thermal Dissipation Package
• Order MRFIC0917R2 for Tape and Reel.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
• Device Marking = M0917
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Normal Conditions VD1, V
Supply Voltage under Load Stress VD1, V
RF Input Power P
Gate Voltage V
Ambient Operating Temperature T
Storage Temperature T
Thermal Resistance, Junction to Case R
(TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
in
SS
A
stg
θJC
D2
D2
900 MHz
GSM CELLULAR
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978–02
(PFP–16)
6 Vdc
4.5 Vdc
15 dBm
–6 Vdc
–40 to +85 °C
–65 to +150 °C
15 °C/W
Motorola, Inc. 1998
9
GND
V
10
D1
11
GND
V
12
G2
V
13
G1
GND
14
RF IN
15
16
N/C
Pin Connections and Functional Block Diagram
8
7
6
5
4
3
2
1
N/C
V
D2
GND
RF OUT
RF OUT
RF OUT
V
SS
GND
MRFIC0917MOTOROLA RF DEVICE DATA
1
RECOMMENDED OPERATING RANGES
Parameter Symbol Value Unit
Supply Voltage VD1, V
Gate Voltage V
RF Frequency Range f
RF Input Power P
SS
RF
RF
D2
2.7 to 5.5 Vdc
–5 to –3 Vdc
800 to 1000 MHz
6 to 13 dBm
ELECTRICAL CHARACTERISTICS (V
, VD2 = 3.6 V, VSS = –4 V, Pin = 12 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms
D1
Period, TA = 25°C unless otherwise noted. Measured in Circuit Configuration Shown in Figure 1.)
Characteristic
Min Typ Max Unit
Frequency Range 880 — 915 MHz
Output Power 34 34.5 — dBm
Power Added Efficiency 43 — — %
Input VSWR — 2:1 — VSWR
Harmonic Output
2nd
3rd
—
—
—
—
–30
–35
Output Power at low voltage (VD1, VD2 = 3.0 V) 32.5 33 — dBm
Output Power, Isolation (VD1, VD2 = 0 V) — –20 –15 dBm
Noise Power in 100 kHz, 925 to 960 MHz — — –90 dBm
Stability – Spurious Output (Pin = 10 to 13 dBm, P
VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle,
V
D1, VD2
Adjusted for Specified P
out)
Load Mismatch Stress (Pin = 10 to 13 dBm, P
10:1 at any Phase Angle, V
Adjusted for Specified P
D1, VD2
= 5 to 34.5 dBm, Load
out
= 5 to 34.5 dBm, Load VSWR =
out
out
)
— — –60 dBc
No Degradation in Output Power after Returning to
Standard Conditions
3 dB VDD Bandwidth (VD1, VD2 = 0 to 4.5 V) 1 — — MHz
Negative Supply Current — — 1 mA
dBc
MRFIC0917
2
RF IN
C1, C3, C10 33 pF
C2, C6, C9 33 nF
C4 4.7 pF
C5 10 pF
C9 C10
C8
V
D1
9
10
11
12
R4
13
R3
14
L1
15
16
C8 6.8 pF
L1 5.6 nH
L2 10 Turn MicroSpring,
Coilcraft 1606–10 or
18 mm 50 Ω MICROSTRIP
Figure 1. 900 MHz Reference Circuit
V
D2
8
L2
7
6
5
4
3
C1
T1
C5
2
1
C6
R1
T2
C2
C4
C3
V
RF OUT
SS
R1, R3 330 Ω
R4 1 kΩ
T1 2 mm 30 Ω MICROSTRIP
T2 3.5 mm 30 Ω MICROSTRIP
BOARD MATERIAL FR4
MOTOROLA RF DEVICE DATA
C16
CR1
C13
C12
1
2
3
4
5
6
7
BATTERY
VRAMP
STANDBY
U2
D
Q1
14
13
12
C14
11
C15
10
9
8
C11
C9 C10
RF IN
R6
C8
L1
R4
R3
R5
9
10
11
12
13
14
15
16
5
6
7
8
G
4
D
S
3
D
S
2
D
1
U1
C17
8
L2
7
6
5
4
3
2
1
C1
T1
C6
T2 C3
C5
C2
RF OUT
C4
R1
C1, C3, C10 33 pF
C2, C6, C9 33 nF
C4 4.7 pF
C5 10 pF
C7 220 nF
C8 6.8 pF
C11 to C16 1 µF
C17 0 to 5 nF Depending on
control bandwidth
Figure 2. GSM Application Circuit Configuration with Drain Switch
and MC33169 GaAs Power Amplifier Support IC
CR1 MMBD701L T1
L1 5.6 nH
L2 10 Turn MicroSpring,
Coilcraft 1606–10 or 18 mm
50 Ω MICROSTRIP
Q1 MMSF4N01HD
R1, R3 330 Ω
R2 100 Ω
R2
C7
R4 1 kΩ
R5 470 Ω
R6 22 Ω
T1 2 mm 30 Ω MICROSTRIP
T2 3.5 mm 30 Ω MICROSTRIP
U1 MRFIC0917
U2 MC33169 (–4 V Version)
BOARD MATERIAL FR4
MRFIC0917MOTOROLA RF DEVICE DATA
3
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