Motorola MRFIC0913 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The MRFIC Line

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by MRFIC0913/D

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This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.8 watts output power and 48% minimum power added efficiency
under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior
performance, Motorola’s planar GaAs MESFET process is employed. The
device is packaged in the PFP–16 Power Flat Package which gives excellent
thermal performance through a solderable backside contact.

• Usable Frequency Range 800 to 1000 MHz

• Typical Output Power:

36.0 dBm @ 5.8 Volts

35.0 dBm @ 4.8 Volts

31.5 dBm @ 3.6 Volts

• 48% Minimum Power Added Efficiency

• Low Parasitic, High Thermal Dissipation Package

• Order MRFIC0913R2 for Tape and Reel Option.

R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

• Device Marking = M0913

ABSOLUTE MAXIMUM RATINGS

Supply Voltage VD1, V
RF Input Power P
Gate Voltage V
Ambient Operating Temperature T
Storage Temperature T
Thermal Resistance, Junction to Case R

(TA = 25°C unless otherwise noted)

Rating

Symbol Value Unit

stg

θJC

in

SS

A

D2



900 MHz

GSM CELLULAR

INTEGRATED POWER AMPLIFIER

GaAs MONOLITHIC

INTEGRATED CIRCUIT

CASE 978–02

(PFP–16)

9 Vdc
15 dBm
–6 Vdc

–40 to +85 °C

–65 to +150 °C

10 °C/W

 

 Motorola, Inc. 1996

MOTOROLA RF DEVICE DATA

9

GND 8

V

10

D1

11

GND

V

12

G2

V

13

G1

GND

14

RF IN

15

16

N/C

Pin Connections and Functional Block Diagram

7

6

5

4

3

2

1

N/C

V

D2

GND

RF OUT

RF OUT

GND

V

SS

GND

MRFIC0913

1

RECOMMENDED OPERATING RANGES

Parameter Symbol Value Unit

Supply Voltage VD1, V
Gate Voltage V
RF Frequency Range f
RF Input Power P

SS

RF

RF

D2

2.7 to 7.5 Vdc
–5 to –3 Vdc

800 to 1000 MHz

6 to 13 dBm

ELECTRICAL CHARACTERISTICS (V

Period, TA = 25°C unless otherwise noted. Measured in Reference Circuit Shown in Figure 1.)

Characteristic

Frequency Range 880 — 915 MHz
Output Power 34.5 35 — dBm
Power Added Efficiency 48 — — %
Input VSWR — 2:1 — VSWR
Harmonic Output

2nd

3rd
Output Power at Low voltage (VD1, VD2 = 4.0 V) 33.3 33.5 — dBm
Output Power, Isolation (VD1, VD2 = 0 V) — –20 –15 dBm
Noise Power in 100 kHz, 925 to 960 MHz — — –90 dBm
Stability – Spurious Output (Pin = 10 to 13 dBm, P

VSWR = 6:1 at any Phase Angle, Source VSWR = 3:1, at any Phase Angle,

VD1, VD2 adjusted for Specified P

Load Mismatch stress (Pin = 10 to 13 dBm, P

at any Phase Angle, VD1, VD2 Adjusted for Specified P
3 dB VDD Bandwidth (VD1, VD2 = 0 to 6 V) 1 — — MHz
Negative Supply Current — — 1.25 mA

out)

V

D1

, VD2 = 4.8 V, VSS = –4 V, Pin = 10 dBm, Peak Measurement at 12.5% Duty Cycle, 4.6 ms

D1

Min Typ Max Unit

= 5 to 35 dBm, Load

out

= 5 to 35 dBm, Load VSWR = 10:1

out

out

)

—
—

— — –60 dBc

No Degradation in Output Power after Returning to

—
—

Standard Conditions

V

D2

–30
–35

dBc

C9 C10

L1

RF IN

C8

C1, C3, C10 47 pF, ATC
C2, C9 47 nF, Vitramon
C5 10 pF, ATC
C6 22 nF, Vitramon
C8 6.8 pF, ATC

R4
R3

9

10

11
12

13

14

15

16

L1 8.2 nH, 0805 Toko
L2 10 Turn MicroSpring,

Coilcraft 1606–10

R1 330 Ω

Figure 1. 900 MHz Reference Circuit

8

7

6

5
4

3

2

1

L2

C5

R1

C3

C2

RF OUT

V

SS

C1

T1

C6

R3 1.8 kΩ
R4 2.7 kΩ
T1 5 mm 30 Ω Microstrip Line
BOARD MATERIAL Glass/Epoxy, εr = 4.45

MRFIC0913
2

MOTOROLA RF DEVICE DATA

C13

0 V

0 V

5

D

R5

Q1

D

6
7

D

8

D

4.8 V BATTERY
3 V

VRAMP

3 V

STANDBY

1

14

G

4
3

S

2

S

1

2

C12

3

CR1

C16

C1 33 pF, 0603 NPO/COG
C2, C9 33 nF
C3 47 pF, 0603 NPO/COG

C4, C5, C8 6.8 pF, 0603 NPO/COG

C6 33 nF
C7 220 nF
C10 33 pF, 0603 NPO/COG
C12 – C16 1 µF

4
5

6
7

U2

R2

13

12
11
10

C14

C9 C10

C15

9
8

L1

RF IN

CR1 MMBD701LT1
L1 8.2 nH, 0805 Toko
L2 10 Turn MicroSpring,

Q1 MMSF4N01HD
R1 330 Ω

C8

Coilcraft 1606–10 (for
improved harmonic rejection
only)

R4

R3

10
11
12
13

14
15
16

9

U1

R2 100 Ω
R3 1.8 kΩ
R4 2.7 kΩ
R5 470 Ω
T1 5 mm 30 Ω Microstrip Line
U1 MRFIC0913
U2 MC33169 (–4 V Version)
BOARD MATERIAL Glass/Epoxy, εr = 4.45

8
7
6
5
4
3
2
1

T1

L2

C5

C6

C1

C2

C3
C4

RF

OUT

R1

C7

Note: Use of a Schottky diode such as MMBD701LT1 for CR1 is mandatory below 3.6 V.

A general purpose silicon diode can be used above 3.6 V.

Figure 2. GSM Application Circuit Configuration with Drain Switch

and MC33169 GaAs Power Amplifier Support IC

MOTOROLA RF DEVICE DATA

MRFIC0913

3