Motorola MRFIC0001 Datasheet



SEMICONDUCTOR TECHNICAL DATA

 

  
 

Order this document

by MRFIC0001/D



The MRFIC0001 is an integrated Quadrature Modulator designed for
operation in the 50 to 260 MHz frequency range. The design utilizes Motorola’s
advanced MOSAIC 3 silicon bipolar RF process to yield superior performance
in a cost effective monolithic device. Applications include DQPSK for PDC,

QUADRATURE

MODULAT OR

INTEGRATED CIRCUIT

NADC, and PHS; GMSK for GSM and DCS1800; and QPSK for CATV.

• Linear I/Q Ports

• On Chip LO Phase Shifter

• I/Q Phase Imbalance = 2 degrees (Typ)

• I/Q Amplitude Imbalance = 0.3 dB (Typ)

• Gain Control = 30 dB (Typ)

• Single Source Low Operating Supply Voltage

• Low Power Consumption

• Low–Cost, Low Profile Plastic TSSOP Package

CASE 948D–03

(TSSOP–20)

• Order MRFIC0001R2 for Tape and Reel.

R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.

• Device Marking = M001

ABSOLUTE MAXIMUM RATINGS (TA = 25_C unless otherwise noted)

Parameter Symbol Value Unit

Supply Voltage V
Control Voltages TX EN, VCNTL 6.5 Vdc
LO Input Power P
Differential I/Q Input Voltage V

I, I, Q, and Q DC Bias Voltage V
Ambient Operating Temperature T
Storage Temperature T

CC

LO

D
B

A

stg

6.5 Vdc

0.0 dBm

2.0 V

2.0 Vdc

–30 to +85

–65 to +125

pp

_

C

_

C

TX EN

20

1234567 9108

VCNTL

VCC GND

GND

19 18 17

GND VCC GND GNDOUT GND

LO

16

VGA

VCCGND GND

15 14 13 12 11

90

OUT I I

Q

Q

Pin Connections and Functional Block Diagram

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 4

 Motorola, Inc. 1997

MRFIC0001MOTOROLA RF DEVICE DATA

1

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Value Unit

Supply Voltage V
LO Input Power P
LO Frequency f
Differential I/Q Input Voltage V

I, I, Q, and Q DC Bias Voltage V
Variable Gain Amplifier Control Voltage V
Transmit Enable Low V oltage TX EN 0 to 0.2 Vdc
Transmit Enable High V oltage TX EN VCC – 0.2 to V

CC
LO

LO

D
B

cntl

2.7 to 5.5 Vdc
–10 dBm

50 to 260 MHz

0 to 1.0 Vdc

1.5 to 1.7 Vdc

0 to V

CC

CC

Vdc

Vdc

ELECTRICAL CHARACTERISTICS (V

fLO = 248 MHz, fD = 100 kHz, TA = 25_C unless otherwise noted)

Characteristic Min Typ Max Unit

Supply Current – 10 12 mA
Standby Current (TX EN = 0.0V) – 40 100 µA
Single Sideband Output Power Level –15 –13 – dBm
Single Sideband Output Power 1dB Compression Point – –10 – dBm
LO Leakage
Undesired Sideband Level – –35 –30 dBc
Output Level Dynamic Range (V
Turn–on/off Time – 2 – µs
I/Q Data

Input 3dB Bandwidth
Amplitude Imbalance
Phase Imbalance

(1) All electrical characteristics measured in test circuit schematic shown in Figure 1.

VB is the bias voltage on the input data ports.
VD is the sinusoidal differential voltage on the input data ports when testing the part in a single sideband mode.
Above power levels are the single–ended output power.

(2) LO leakage power is unaffected by V

(2)

= 0 to 2.2V)

cntl

= 3.0 V, TX EN = 3.0 V, V

CC

(2)

setting.

cntl

= 0.0 V, VD = 0.8 VPP, VB = 1.6 V, PLO = –10 dBm,

cntl

– –55 –45 dBm

– 30 – dB

–
–
–

5

0.3
2

–
–
–

MHz

degree

dB

EVALUATION BOARDS

Evaluation boards are available for RF Monolithic Integrated Circuits by adding a “TF” suffix to the device type. For a
complete list of currently available boards and ones in development for newly introduced product, please contact your
local Motorola Distributor or Sales Office.

MRFIC0001

MOTOROLA RF DEVICE DATA

2