Motorola MRF959T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MRF959T1/D
Motorola’s MRF959 is a high performance silicon NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF959 is well suited
for low voltage applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity.
• Low Noise Figure, NF
• High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA
• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
• Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
• Fully Ion–Implanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
MAXIMUM RATINGS
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
Collector Current — Continuous (2) I
Maximum Junction Temperature T
Storage Temperature T
Thermal Resistance, Junction to Case R
DEVICE MARKINGS
MRF959T1 = V1
(1) T o calculate the junction temperature use TJ = (PD x R
body.
(2) IC — Continuous (MTBF > 10 years).
= 1.3 dB (Typ) @ 1 GHz @ 5 mA
min
Rating Symbol Value Unit
θJC
) + TC. The case temperature is measured on collector lead adjacent to the package
CEO
CBO
EBO
P
Dmax
Jmax
C
stg
θJC
I
= 100 mA
Cmax
LOW NOISE
TRANSISTORS
CASE 463–01, STYLE 1
(SC–90)
10 Vdc
20 Vdc
1.5 Vdc
0.150
2
100 mA
150 °C
–55 to +150 °C
500 °C/W
Watts
mW/°C
Motorola, Inc. 1997
MRF959T1MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown V oltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V
(BR)CEO
V
(BR)CBO
I
EBO
I
CBO
ON CHARACTERISTICS (3)
DC Current Gain (VCE = 6 V, IC = 5 mA)
h
FE 75 — 150 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1 V, IE = 0, f = 1 MHz)
(VCB = 5 V, IE = 0, f = 1 MHz)
Current Gain — Bandwidth Product
(VCE = 6 V, IC = 30 mA, f = 1 GHz)
C
cb
f
T
PERFORMANCE CHARACTERISTICS
Conditions Symbol Min Typ Max Unit
Insertion Gain
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Maximum Unilateral Gain (4)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Maximum Stable Gain and/or Maximum Available Gain (5)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Noise Figure — Minimum
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Noise Resistance
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Associated Gain at Minimum NF
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Output Power at 1 dB Gain Compression (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Output Third Order Intercept (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
(3) Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
(4) Maximum unilateral gain is G
(5) Maximum available gain and maximum stable gain are defined by the K factor as follows:
(6) Zin = 50 Ω and Z
matched for small signal maximum gain.
out
Umax
=
(1
–
|S11|2)(1–|S
2
|S
|
21
|2)
22
|S21|
G
Umax
MSG
MAG
NF
R
G
P
OIP
min
NF
1dB
N
3
2
MAG =
10 13 — Vdc
20 25 — Vdc
— — 0.1 µA
— — 0.1 µA
—
—
— 9 — GHz
—
—
—
—
—
—
—
—
—
—
—
—
— +12 — dBm
— +26 — dBm
|S
21
|S12|
|S
21
|S12|
0.63
0.44
4
14
9
15
10
17
1.6
1.3
14
9
8
13
|
(K
|
, if K < 1MSG =
2
"
K
–
1Ǹ)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
, if K > 1
pF
dB
dB
dB
dB
Ω
dB
MRF959T1
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
C, CAPACITANCE (pF)
0.4
0.2
0
024 8106
C
ob
C
cb
VCB, REVERSE VOLTAGE (V)
Figure 1. Capacitance versus V oltage
140
120
100
80
60
, DC CURRENT GAIN
FE
h
40
20
0.1
IC, COLLECTOR CURRENT (mA)
10
f = 1 MHz
VCE = 1 V
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
, INPUT CAP ACITANCE
1.0
IB
C
0.8
0.6
0.4
0 0.4 0.8 1.2 1.6
C
ib
VEB, EMITTER–BASE VOLTAGE (V)
Figure 2. Input Capacitance versus V oltage
10
VCE = 6 V
9
f = 1 GHz
8
7
6
5
4
3
, GAIN BANDWIDTH PRODUCT (GHz)
2
T
f
1
0.1 1 10010
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
2.0
RF
INPUT
P
in
Figure 3. DC Current Gain versus
Collector Current
V
BE
BIAS NETWORK
*SLUG TUNER
Figure 5. Functional Circuit Schematic
DUT
Figure 4. Gain–Bandwidth Product versus
Collector Current
V
CE
RF
OUTPUT
*SLUG TUNER
BIAS NETWORK
*MICROLAB/FXR
SF–11N < 1 GHz
SF–31N > 1 GHz
P
MRF959T1MOTOROLA RF DEVICE DATA
out
3
TYPICAL CHARACTERISTICS
25
20
15
10
5
MAXIMUM AV AILABLE GAIN (dB)
MSG, MAXIMUM STABLE GAIN; MAG,
0
0.1 1 10
MSG
f, FREQUENCY (GHz)
VCE = 1 V
IC = 1 mA
MAG
Figure 6. Maximum Stable/Available Gain
versus Frequency
35
,
30
Umax
25
20
15
10
5
0
, FORWARD INSER TION GAIN; G
2
MAXIMUM UNILA TERAL GAIN (dB)
–5
21
S
–10
0.1 1
G
Umax
S21
2
f, FREQUENCY (GHz)
VCE = 1 V
IC = 1 mA
35
30
25
20
15
10
MAXIMUM AV AILABLE GAIN (dB)
MSG, MAXIMUM STABLE GAIN; MAG,
40
,
35
Umax
30
25
20
15
10
, FORWARD INSER TION GAIN; G
2
MAXIMUM UNILA TERAL GAIN (dB)
21
S
10
VCE = 6 V
MSG
5
0
0.1 1
f, FREQUENCY (GHz)
MAG
IC = 5 mA
MSG
Figure 7. Maximum Stable/Available Gain
versus Frequency
VCE = 6 V
IC = 5 mA
G
Umax
2
S21
5
0
0.1 1 10
f, FREQUENCY (GHz)
10
Figure 8. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
16
,
Umax
, FORWARD INSER TION GAIN; G
2
21
S
VCE = 1 V
14
f = 1 GHz
12
10
8
6
MAXIMUM UNILA TERAL GAIN (dB)
4
0.1 1
G
Umax
2
S21
10
IC, COLLECTOR CURRENT (mA)
Figure 10. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
MRF959T1
4
100
Figure 9. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
16
,
G
S21
Umax
2
Umax
, FORWARD INSER TION GAIN; G
2
21
S
VCE = 6 V
14
f = 1 GHz
12
10
8
6
MAXIMUM UNILA TERAL GAIN (dB)
4
0.1 1 10010
IC, COLLECTOR CURRENT (mA)
Figure 11. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
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